These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

193 related articles for article (PubMed ID: 33007770)

  • 21. A high thermal stability ohmic contact for GaN-based devices.
    Wu CY; Chao TS; Chou YC
    Nanoscale Adv; 2023 Sep; 5(19):5361-5366. PubMed ID: 37767046
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs.
    Cui P; Lv Y; Fu C; Liu H; Cheng A; Luan C; Zhou Y; Lin Z
    Sci Rep; 2018 Aug; 8(1):12850. PubMed ID: 30150625
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.
    Sharma N; Periasamy C; Chaturvedi N
    J Nanosci Nanotechnol; 2018 Jul; 18(7):4580-4587. PubMed ID: 29442634
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Significantly Enhanced Interfacial Thermal Conductance across GaN/Diamond Interfaces Utilizing Al
    Wu K; Chang G; Ye J; Zhang G
    ACS Appl Mater Interfaces; 2024 Oct; 16(43):58880-58890. PubMed ID: 39422442
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.
    Greco G; Fiorenza P; Iucolano F; Severino A; Giannazzo F; Roccaforte F
    ACS Appl Mater Interfaces; 2017 Oct; 9(40):35383-35390. PubMed ID: 28920438
    [TBL] [Abstract][Full Text] [Related]  

  • 26. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate.
    Huang YC; Chiu HC; Kao HL; Wang HC; Liu CH; Huang CR; Chen SW
    Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34062908
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Hybrid functional investigation of band offsets for non-polar, Ga-polar and Al-polar interfaces in GaN/AlN heterojunction.
    Kaewmeechai C; Laosiritaworn Y; Jaroenjittichai AP
    J Phys Condens Matter; 2020 Oct; 33(3):. PubMed ID: 33017819
    [TBL] [Abstract][Full Text] [Related]  

  • 29. The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface.
    Ma Y; Shi L; Chen L; Chen C; Hong Y; Qin H; Zhang X; Cui Y; Lin H; Cheng Z; Zhang F; Mao L; Cai Y
    Nanomaterials (Basel); 2024 Jul; 14(14):. PubMed ID: 39057887
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.
    Chen KM; Lin CJ; Chuang CW; Pai HC; Chang EY; Huang GW
    Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241634
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
    Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
    Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Band Offsets at κ-([Al,In]
    Schultz T; Kneiß M; Storm P; Splith D; von Wenckstern H; Grundmann M; Koch N
    ACS Appl Mater Interfaces; 2020 Feb; 12(7):8879-8885. PubMed ID: 31977187
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio Study.
    Hrytsak R; Kempisty P; Grzanka E; Leszczynski M; Sznajder M
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057196
    [TBL] [Abstract][Full Text] [Related]  

  • 34. The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111).
    Yan Y; Liu Y; Xiong G; Huang J; Yang B
    Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675347
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Band Alignment of Sc
    Jin EN; Hardy MT; Mock AL; Lyons JL; Kramer AR; Tadjer MJ; Nepal N; Katzer DS; Meyer DJ
    ACS Appl Mater Interfaces; 2020 Nov; 12(46):52192-52200. PubMed ID: 33146516
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.
    Fisichella G; Greco G; Roccaforte F; Giannazzo F
    Nanoscale; 2014 Aug; 6(15):8671-80. PubMed ID: 24946753
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by
    Siddique A; Ahmed R; Anderson J; Holtz M; Piner EL
    ACS Appl Mater Interfaces; 2021 Apr; 13(15):18264-18273. PubMed ID: 33823581
    [No Abstract]   [Full Text] [Related]  

  • 38. Comprehensive Comparison of MOCVD- and LPCVD-SiN
    Deng L; Zhou L; Lu H; Yang L; Yu Q; Zhang M; Wu M; Hou B; Ma X; Hao Y
    Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004961
    [TBL] [Abstract][Full Text] [Related]  

  • 39. The regulation of the withstand voltage performance of ZnO/GaN vertical heterostructures using external electric field and vacancy defects.
    Yang M; Ding J; Wang X; Chen H; Fu H
    J Mol Graph Model; 2023 May; 120():108424. PubMed ID: 36724693
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.
    Kang SC; Jung HW; Chang SJ; Kim SM; Lee SK; Lee BH; Kim H; Noh YS; Lee SH; Kim SI; Ahn HK; Lim JW
    Nanomaterials (Basel); 2020 Oct; 10(11):. PubMed ID: 33114425
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 10.