These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

122 related articles for article (PubMed ID: 33017819)

  • 21. Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates.
    Bengoechea-Encabo A; Albert S; Müller M; Xie MY; Veit P; Bertram F; Sanchez-Garcia MA; Zúñiga-Pérez J; de Mierry P; Christen J; Calleja E
    Nanotechnology; 2017 Sep; 28(36):365704. PubMed ID: 28604369
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells.
    Lee CS; Larina L; Shin YM; Al-Ammar EA; Ahn BT
    Phys Chem Chem Phys; 2012 Apr; 14(14):4789-95. PubMed ID: 22382807
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures.
    Janicki L; Kunert G; Sawicki M; Piskorska-Hommel E; Gas K; Jakiela R; Hommel D; Kudrawiec R
    Sci Rep; 2017 Feb; 7():41877. PubMed ID: 28150798
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.
    Fernández-Garrido S; Kong X; Gotschke T; Calarco R; Geelhaar L; Trampert A; Brandt O
    Nano Lett; 2012 Dec; 12(12):6119-25. PubMed ID: 23130785
    [TBL] [Abstract][Full Text] [Related]  

  • 25. First-Principles Study on III-Nitride Polymorphs: AlN/GaN/InN in the
    Zhang Z; Chai C; Zhang W; Song Y; Kong L; Yang Y
    Materials (Basel); 2020 Jul; 13(14):. PubMed ID: 32707645
    [TBL] [Abstract][Full Text] [Related]  

  • 26. A high-performance hydrogen sensor based on a reverse-biased MoS
    Goel N; Kumar R; Jain SK; Rajamani S; Roul B; Gupta G; Kumar M; Krupanidhi SB
    Nanotechnology; 2019 Aug; 30(31):314001. PubMed ID: 30889560
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.
    Shi K; Li DB; Song HP; Guo Y; Wang J; Xu XQ; Liu JM; Yang AL; Wei HY; Zhang B; Yang SY; Liu XL; Zhu QS; Wang ZG
    Nanoscale Res Lett; 2011 Dec; 6(1):50. PubMed ID: 27502672
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.
    Zhao G; Wang L; Yang S; Li H; Wei H; Han D; Wang Z
    Sci Rep; 2016 Feb; 6():20787. PubMed ID: 26861595
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Band Alignment at GaN/Single-Layer WSe
    Tangi M; Mishra P; Tseng CC; Ng TK; Hedhili MN; Anjum DH; Alias MS; Wei N; Li LJ; Ooi BS
    ACS Appl Mater Interfaces; 2017 Mar; 9(10):9110-9117. PubMed ID: 28222259
    [TBL] [Abstract][Full Text] [Related]  

  • 30. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics.
    Sun W; Tan CK; Tansu N
    Sci Rep; 2017 Sep; 7(1):11826. PubMed ID: 28928372
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes.
    Bharadwaj S; Miller J; Lee K; Lederman J; Siekacz M; Xing HG; Jena D; Skierbiszewski C; Turski H
    Opt Express; 2020 Feb; 28(4):4489-4500. PubMed ID: 32121684
    [TBL] [Abstract][Full Text] [Related]  

  • 32. The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111).
    Wang W; Chen C; Zhang G; Wang T; Wu H; Liu Y; Liu C
    Nanoscale Res Lett; 2015; 10():91. PubMed ID: 25852387
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio Study.
    Hrytsak R; Kempisty P; Grzanka E; Leszczynski M; Sznajder M
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057196
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Strain and size combined effects on the GaN band structure: VEELS and DFT study.
    Benaissa M; Sigle W; Zaari H; Tadout M; van Aken PA
    Phys Chem Chem Phys; 2017 Feb; 19(7):5430-5434. PubMed ID: 28165089
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
    Schilirò E; Giannazzo F; Di Franco S; Greco G; Fiorenza P; Roccaforte F; Prystawko P; Kruszewski P; Leszczynski M; Cora I; Pécz B; Fogarassy Z; Lo Nigro R
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947665
    [TBL] [Abstract][Full Text] [Related]  

  • 36. p-GaN/n-ZnO heterojunction nanowires: optoelectronic properties and the role of interface polarity.
    Schuster F; Laumer B; Zamani RR; Magén C; Morante JR; Arbiol J; Stutzmann M
    ACS Nano; 2014 May; 8(5):4376-84. PubMed ID: 24720603
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.
    Song J; Han J
    Materials (Basel); 2017 Mar; 10(3):. PubMed ID: 28772612
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Hybrid density functional theory studies of AlN and GaN under uniaxial strain.
    Qin L; Duan Y; Shi H; Shi L; Tang G
    J Phys Condens Matter; 2013 Jan; 25(4):045801. PubMed ID: 23248170
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer.
    Liudi Mulyo A; Rajpalke MK; Kuroe H; Vullum PE; Weman H; Fimland BO; Kishino K
    Nanotechnology; 2019 Jan; 30(1):015604. PubMed ID: 30375368
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Interface Engineering of Monolayer MoS
    Zhang Z; Qian Q; Li B; Chen KJ
    ACS Appl Mater Interfaces; 2018 May; 10(20):17419-17426. PubMed ID: 29706066
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 7.