These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

234 related articles for article (PubMed ID: 33026795)

  • 1. Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors.
    Arnold AJ; Schulman DS; Das S
    ACS Nano; 2020 Oct; 14(10):13557-13568. PubMed ID: 33026795
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS
    Khan MA; Rathi S; Lee C; Lim D; Kim Y; Yun SJ; Youn DH; Kim GH
    ACS Appl Mater Interfaces; 2018 Jul; 10(28):23961-23967. PubMed ID: 29938500
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Tailoring the Electrical Characteristics of MoS
    Jeong I; Cho K; Yun S; Shin J; Kim J; Kim GT; Lee T; Chung S
    ACS Nano; 2022 Apr; 16(4):6215-6223. PubMed ID: 35377600
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts.
    Yamamoto M; Nakaharai S; Ueno K; Tsukagoshi K
    Nano Lett; 2016 Apr; 16(4):2720-7. PubMed ID: 26963588
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.
    Chuang HJ; Chamlagain B; Koehler M; Perera MM; Yan J; Mandrus D; Tománek D; Zhou Z
    Nano Lett; 2016 Mar; 16(3):1896-902. PubMed ID: 26844954
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Improvement of the Bias Stress Stability in 2D MoS
    Park W; Pak Y; Jang HY; Nam JH; Kim TH; Oh S; Choi SM; Kim Y; Cho B
    Nanomaterials (Basel); 2019 Aug; 9(8):. PubMed ID: 31409001
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Selective Electron Beam Patterning of Oxygen-Doped WSe
    Ngo TD; Choi MS; Lee M; Ali F; Hassan Y; Ali N; Liu S; Lee C; Hone J; Yoo WJ
    Adv Sci (Weinh); 2022 Sep; 9(26):e2202465. PubMed ID: 35853245
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Improved contacts to p-type MoS
    Zhang S; Le ST; Richter CA; Hacker CA
    Appl Phys Lett; 2019; 115(7):. PubMed ID: 32116333
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors.
    Murastov G; Aslam MA; Leitner S; Tkachuk V; Plutnarová I; Pavlica E; Rodriguez RD; Sofer Z; Matković A
    Nanomaterials (Basel); 2024 Mar; 14(5):. PubMed ID: 38470809
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.
    Nakaharai S; Yamamoto M; Ueno K; Tsukagoshi K
    ACS Appl Mater Interfaces; 2016 Jun; 8(23):14732-9. PubMed ID: 27203118
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping.
    Oberoi A; Han Y; Stepanoff SP; Pannone A; Sun Y; Lin YC; Chen C; Shallenberger JR; Zhou D; Terrones M; Redwing JM; Robinson JA; Wolfe DE; Yang Y; Das S
    ACS Nano; 2023 Oct; 17(20):19709-19723. PubMed ID: 37812500
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A "Click" Reaction to Engineer MoS
    Miao J; Wu L; Bian Z; Zhu Q; Zhang T; Pan X; Hu J; Xu W; Wang Y; Xu Y; Yu B; Ji W; Zhang X; Qiao J; Samorì P; Zhao Y
    ACS Nano; 2022 Dec; 16(12):20647-20655. PubMed ID: 36455073
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Selective p-Doping of 2D WSe
    Yang S; Lee G; Kim J
    ACS Appl Mater Interfaces; 2021 Jan; 13(1):955-961. PubMed ID: 33379863
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.
    Khalil HM; Khan MF; Eom J; Noh H
    ACS Appl Mater Interfaces; 2015 Oct; 7(42):23589-96. PubMed ID: 26434774
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Controlling Polarity of MoTe
    Liu X; Islam A; Guo J; Feng PX
    ACS Nano; 2020 Feb; 14(2):1457-1467. PubMed ID: 31909988
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.
    Noda K; Wada Y; Toyabe T
    Phys Chem Chem Phys; 2015 Oct; 17(40):26535-40. PubMed ID: 24922359
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electron and hole mobilities in single-layer WSe2.
    Allain A; Kis A
    ACS Nano; 2014 Jul; 8(7):7180-5. PubMed ID: 24949529
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures.
    Xia F; Shao Z; He Y; Wang R; Wu X; Jiang T; Duhm S; Zhao J; Lee ST; Jie J
    ACS Nano; 2016 Nov; 10(11):10283-10293. PubMed ID: 27798826
    [TBL] [Abstract][Full Text] [Related]  

  • 19. End-Bonded Metal Contacts on WSe
    Chu CH; Lin HC; Yeh CH; Liang ZY; Chou MY; Chiu PW
    ACS Nano; 2019 Jul; 13(7):8146-8154. PubMed ID: 31244047
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-Performance Self-Powered WSe
    Zhan Y; Wu Z; Zeng P; Wang W; Jiang Y; Zheng H; Zheng P; Zheng L; Zhang Y
    ACS Appl Mater Interfaces; 2023 Nov; 15(47):55043-55054. PubMed ID: 37967170
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 12.