These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
3. Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks. Schulte-Braucks C; Narimani K; Glass S; von den Driesch N; Hartmann JM; Ikonic Z; Afanas'ev VV; Zhao QT; Mantl S; Buca D ACS Appl Mater Interfaces; 2017 Mar; 9(10):9102-9109. PubMed ID: 28221764 [TBL] [Abstract][Full Text] [Related]
4. The growth of Ge and direct bandgap Ge Gunder C; Maia de Oliveira F; Wangila E; Stanchu H; Zamani-Alavijeh M; Ojo S; Acharya S; Said A; Li C; Mazur YI; Yu SQ; Salamo GJ RSC Adv; 2024 Jan; 14(2):1250-1257. PubMed ID: 38174282 [TBL] [Abstract][Full Text] [Related]
5. Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications. Lin PH; Ghosh S; Chang GE Sensors (Basel); 2024 Feb; 24(4):. PubMed ID: 38400421 [TBL] [Abstract][Full Text] [Related]
6. Impact of tensile strain on low Sn content GeSn lasing. Rainko D; Ikonic Z; Elbaz A; von den Driesch N; Stange D; Herth E; Boucaud P; El Kurdi M; Grützmacher D; Buca D Sci Rep; 2019 Jan; 9(1):259. PubMed ID: 30670785 [TBL] [Abstract][Full Text] [Related]
7. Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications. Kong Z; Wang G; Liang R; Su J; Xun M; Miao Y; Gu S; Li J; Cao K; Lin H; Li B; Ren Y; Li J; Xu J; Radamson HH Nanomaterials (Basel); 2022 Mar; 12(6):. PubMed ID: 35335793 [TBL] [Abstract][Full Text] [Related]
8. High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application. Yang J; Hu H; Miao Y; Dong L; Wang B; Wang W; Xuan R Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31438614 [TBL] [Abstract][Full Text] [Related]
9. Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement. Grant PC; Margetis J; Du W; Zhou Y; Dou W; Abernathy G; Kuchuk A; Li B; Tolle J; Liu J; Sun G; Soref RA; Mortazavi M; Yu SQ Nanotechnology; 2018 Nov; 29(46):465201. PubMed ID: 30191884 [TBL] [Abstract][Full Text] [Related]
10. Structural Property Study for GeSn Thin Films. Zhang L; Song Y; von den Driesch N; Zhang Z; Buca D; Grützmacher D; Wang S Materials (Basel); 2020 Aug; 13(16):. PubMed ID: 32824570 [TBL] [Abstract][Full Text] [Related]
12. Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth. Dou W; Benamara M; Mosleh A; Margetis J; Grant P; Zhou Y; Al-Kabi S; Du W; Tolle J; Li B; Mortazavi M; Yu SQ Sci Rep; 2018 Apr; 8(1):5640. PubMed ID: 29618825 [TBL] [Abstract][Full Text] [Related]
13. Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications. Tai YC; Yeh PL; An S; Cheng HH; Kim M; Chang GE Nanotechnology; 2020 Oct; 31(44):445301. PubMed ID: 32674093 [TBL] [Abstract][Full Text] [Related]
15. Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes. Li Y; Ye J; Yuan K; Zhai G; Li T; Ye Y; Wu X; Zhang X Nanotechnology; 2020 Feb; 31(9):095713. PubMed ID: 31731280 [TBL] [Abstract][Full Text] [Related]
16. The Effects of Doping Density and Temperature on the Optoelectronic Properties of Formamidinium Tin Triiodide Thin Films. Milot RL; Klug MT; Davies CL; Wang Z; Kraus H; Snaith HJ; Johnston MB; Herz LM Adv Mater; 2018 Nov; 30(44):e1804506. PubMed ID: 30222220 [TBL] [Abstract][Full Text] [Related]
17. Nonlinear Carrier Interactions in Lead Halide Perovskites and the Role of Defects. Srimath Kandada AR; Neutzner S; D'Innocenzo V; Tassone F; Gandini M; Akkerman QA; Prato M; Manna L; Petrozza A; Lanzani G J Am Chem Soc; 2016 Oct; 138(41):13604-13611. PubMed ID: 27665763 [TBL] [Abstract][Full Text] [Related]
18. Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector. Yang Y; Wang X; Wang C; Song Y; Zhang M; Xue Z; Wang S; Zhu Z; Liu G; Li P; Dong L; Mei Y; Chu PK; Hu W; Wang J; Di Z Nano Lett; 2020 May; 20(5):3872-3879. PubMed ID: 32293186 [TBL] [Abstract][Full Text] [Related]
19. Dark Current Analysis on GeSn Ghosh S; Sun G; Morgan TA; Forcherio GT; Cheng HH; Chang GE Sensors (Basel); 2023 Aug; 23(17):. PubMed ID: 37687985 [TBL] [Abstract][Full Text] [Related]
20. Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures. Rainko D; Ikonic Z; Vukmirović N; Stange D; von den Driesch N; Grützmacher D; Buca D Sci Rep; 2018 Oct; 8(1):15557. PubMed ID: 30348982 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]