These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

116 related articles for article (PubMed ID: 33144622)

  • 21. Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.
    Kusch G; Comish EJ; Loeto K; Hammersley S; Kappers MJ; Dawson P; Oliver RA; Massabuau FC
    Nanoscale; 2022 Jan; 14(2):402-409. PubMed ID: 34919106
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Cathodoluminescence Spectroscopy in Graded In
    Zhao X; Wang T; Sheng B; Zheng X; Chen L; Liu H; He C; Xu J; Zhu R; Wang X
    Nanomaterials (Basel); 2022 Oct; 12(21):. PubMed ID: 36364495
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition.
    Liao CH; Tu CG; Chang WM; Su CY; Shih PY; Chen HT; Yao YF; Hsieh C; Chen HS; Lin CH; Yu CK; Kiang YW; Yang CC
    Opt Express; 2014 Jul; 22(14):17303-19. PubMed ID: 25090544
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Impact of microscopic In fluctuations on the optical properties of In
    Sakaki A; Funato M; Miyano M; Okazaki T; Kawakami Y
    Sci Rep; 2019 Mar; 9(1):3733. PubMed ID: 30842610
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.
    Tsai CL; Wu WC
    Materials (Basel); 2014 May; 7(5):3758-3771. PubMed ID: 28788647
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Observations of exciton-surface plasmon polariton coupling and exciton-phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films.
    Estrin Y; Rich DH; Keller S; DenBaars SP
    J Phys Condens Matter; 2015 Jul; 27(26):265802. PubMed ID: 26076324
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates.
    Lee ML; Yeh YH; Tu SJ; Chen PC; Wu MJ; Lai WC; Sheu JK
    Opt Express; 2013 Sep; 21 Suppl 5():A864-71. PubMed ID: 24104581
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Strain engineering of nanowire multi-quantum well demonstrated by Raman spectroscopy.
    Wölz M; Ramsteiner M; Kaganer VM; Brandt O; Geelhaar L; Riechert H
    Nano Lett; 2013 Sep; 13(9):4053-9. PubMed ID: 24001176
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Correlated Nanoscale Analysis of the Emission from Wurtzite versus Zincblende (In,Ga)As/GaAs Nanowire Core-Shell Quantum Wells.
    Lähnemann J; Hill MO; Herranz J; Marquardt O; Gao G; Al Hassan A; Davtyan A; Hruszkewycz SO; Holt MV; Huang C; Calvo-Almazán I; Jahn U; Pietsch U; Lauhon LJ; Geelhaar L
    Nano Lett; 2019 Jul; 19(7):4448-4457. PubMed ID: 31141672
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.
    Chen CY; Hsieh C; Liao CH; Chung WL; Chen HT; Cao W; Chang WM; Chen HS; Yao YF; Ting SY; Kiang YW; Yang CC; Hu X
    Opt Express; 2012 May; 20(10):11321-35. PubMed ID: 22565753
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission.
    Vermeersch R; Jacopin G; Castioni F; Rouvière JL; García-Cristóbal A; Cros A; Pernot J; Daudin B
    Nanotechnology; 2023 Apr; 34(27):. PubMed ID: 37023726
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD.
    Ito K; Lu W; Sone N; Miyamoto Y; Okuda R; Iwaya M; Tekeuchi T; Kamiyama S; Akasaki I
    Nanomaterials (Basel); 2020 Jul; 10(7):. PubMed ID: 32664358
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications.
    Yoo D; Lee K; Tchoe Y; Guha P; Ali A; Saroj RK; Lee S; Islam ABMH; Kim M; Yi GC
    Sci Rep; 2021 Sep; 11(1):17524. PubMed ID: 34471184
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.
    Kang ES; Ju JW; Kim JS; Ahn HK; Lee JK; Kim JH; Shin DC; Lee IH
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4053-6. PubMed ID: 18047117
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths.
    Ajay A; Blasco R; Polaczyński J; Spies M; Den Hertog MI; Monroy E
    Nanotechnology; 2018 Sep; 29(38):385201. PubMed ID: 29947335
    [TBL] [Abstract][Full Text] [Related]  

  • 36. On the impact of the beveled mesa for GaN-based micro-light emitting diodes: electrical and optical properties.
    Hang S; Zhang G; Chu C; Zhang Y; Zheng Q; Li Q; Zhang ZH
    Opt Express; 2022 Oct; 30(21):37675-37685. PubMed ID: 36258351
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si.
    Sun Y; Zhou K; Feng M; Li Z; Zhou Y; Sun Q; Liu J; Zhang L; Li D; Sun X; Li D; Zhang S; Ikeda M; Yang H
    Light Sci Appl; 2018; 7():13. PubMed ID: 30839586
    [TBL] [Abstract][Full Text] [Related]  

  • 38. GaN-based parallel micro-light-emitting diode arrays with dual-wavelength In
    Zhao J; Yin Y; He R; Chen R; Zhang S; Long H; Wang J; Wei T
    Opt Express; 2022 May; 30(11):18461-18470. PubMed ID: 36221646
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures.
    Wölz M; Lähnemann J; Brandt O; Kaganer VM; Ramsteiner M; Pfüller C; Hauswald C; Huang CN; Geelhaar L; Riechert H
    Nanotechnology; 2012 Nov; 23(45):455203. PubMed ID: 23085638
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In
    Zscherp MF; Jentsch SA; Müller MJ; Lider V; Becker C; Chen L; Littmann M; Meier F; Beyer A; Hofmann DM; As DJ; Klar PJ; Volz K; Chatterjee S; Schörmann J
    ACS Appl Mater Interfaces; 2023 Aug; 15(33):39513-39522. PubMed ID: 37530411
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.