249 related articles for article (PubMed ID: 33177566)
21. Switching-behavior improvement in HfO
Zhang W; Lei J; Dai Y; Zhang X; Kang L; Peng B; Hu F
Nanotechnology; 2022 Apr; 33(25):. PubMed ID: 35294938
[TBL] [Abstract][Full Text] [Related]
22. Low-Power Resistive Switching Characteristic in HfO
Ding X; Feng Y; Huang P; Liu L; Kang J
Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
[TBL] [Abstract][Full Text] [Related]
23. Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO
Shin DH; Park H; Ghenzi N; Kim YR; Cheong S; Shim SK; Yim S; Park TW; Song H; Lee JK; Kim BS; Park T; Hwang CS
ACS Appl Mater Interfaces; 2024 Apr; 16(13):16462-16473. PubMed ID: 38513155
[TBL] [Abstract][Full Text] [Related]
24. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications.
Khot AC; Dongale TD; Nirmal KA; Sung JH; Lee HJ; Nikam RD; Kim TG
ACS Appl Mater Interfaces; 2022 Mar; 14(8):10546-10557. PubMed ID: 35179364
[TBL] [Abstract][Full Text] [Related]
25. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.
Wang LG; Qian X; Cao YQ; Cao ZY; Fang GY; Li AD; Wu D
Nanoscale Res Lett; 2015; 10():135. PubMed ID: 25852426
[TBL] [Abstract][Full Text] [Related]
26. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.
Niu G; Calka P; Auf der Maur M; Santoni F; Guha S; Fraschke M; Hamoumou P; Gautier B; Perez E; Walczyk C; Wenger C; Di Carlo A; Alff L; Schroeder T
Sci Rep; 2016 May; 6():25757. PubMed ID: 27181525
[TBL] [Abstract][Full Text] [Related]
27. Resistive Switching Characteristics of HfO
Liu CF; Tang XG; Wang LQ; Tang H; Jiang YP; Liu QX; Li WH; Tang ZH
Nanomaterials (Basel); 2019 Aug; 9(8):. PubMed ID: 31382660
[TBL] [Abstract][Full Text] [Related]
28. Hafnium Oxide (HfO
Banerjee W; Kashir A; Kamba S
Small; 2022 Jun; 18(23):e2107575. PubMed ID: 35510954
[TBL] [Abstract][Full Text] [Related]
29. Sprayed FeWO
Patil AR; Dongale TD; Namade LD; Mohite SV; Kim Y; Sutar SS; Kamat RK; Rajpure KY
J Colloid Interface Sci; 2023 Jul; 642():540-553. PubMed ID: 37028161
[TBL] [Abstract][Full Text] [Related]
30. Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices.
Ambrosi E; Bricalli A; Laudato M; Ielmini D
Faraday Discuss; 2019 Feb; 213(0):87-98. PubMed ID: 30364922
[TBL] [Abstract][Full Text] [Related]
31. Defect-Engineered Electroforming-Free Analog HfO
Kim GS; Song H; Lee YK; Kim JH; Kim W; Park TH; Kim HJ; Min Kim K; Hwang CS
ACS Appl Mater Interfaces; 2019 Dec; 11(50):47063-47072. PubMed ID: 31741373
[TBL] [Abstract][Full Text] [Related]
32. Memristive Devices from CuO Nanoparticles.
Walke PD; Rana AUHS; Yuldashev SU; Magotra VK; Lee DJ; Abdullaev S; Kang TW; Jeon HC
Nanomaterials (Basel); 2020 Aug; 10(9):. PubMed ID: 32859083
[TBL] [Abstract][Full Text] [Related]
33. Effect of electrode materials on resistive switching behaviour of NbO
Leonetti G; Fretto M; Pirri FC; De Leo N; Valov I; Milano G
Sci Rep; 2023 Oct; 13(1):17003. PubMed ID: 37813937
[TBL] [Abstract][Full Text] [Related]
34. Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.
Li M; Zhuge F; Zhu X; Yin K; Wang J; Liu Y; He C; Chen B; Li RW
Nanotechnology; 2010 Oct; 21(42):425202. PubMed ID: 20858929
[TBL] [Abstract][Full Text] [Related]
35. Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO
Yu Y; Ding Z; Ren Y; Wang X; Quan H; Jia H; Jiang C
ACS Omega; 2024 Jun; 9(23):24601-24609. PubMed ID: 38882132
[TBL] [Abstract][Full Text] [Related]
36. A study on the resistance switching of Ag
Lee TS; Lee NJ; Abbas H; Hu Q; Yoon TS; Lee HH; Le Shim E; Kang CJ
Nanotechnology; 2018 Jan; 29(3):035202. PubMed ID: 29251266
[TBL] [Abstract][Full Text] [Related]
37. Forming and switching mechanisms of a cation-migration-based oxide resistive memory.
Tsuruoka T; Terabe K; Hasegawa T; Aono M
Nanotechnology; 2010 Oct; 21(42):425205. PubMed ID: 20864781
[TBL] [Abstract][Full Text] [Related]
38. Resistive switching characteristics of ZnO nanowires.
Yoo EJ; Shin IK; Yoon TS; Choi YJ; Kang CJ
J Nanosci Nanotechnol; 2014 Dec; 14(12):9459-64. PubMed ID: 25971083
[TBL] [Abstract][Full Text] [Related]
39. Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy.
Collins L; Celano U
ACS Appl Mater Interfaces; 2020 Sep; 12(37):41659-41665. PubMed ID: 32870659
[TBL] [Abstract][Full Text] [Related]
40. Improved Performance of the Al
George T; Murugan AV
ACS Appl Mater Interfaces; 2022 Nov; 14(45):51066-51083. PubMed ID: 36397313
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]