These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

181 related articles for article (PubMed ID: 33196180)

  • 41. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
    Lee YJ; Yao YC; Huang CY; Lin TY; Cheng LL; Liu CY; Wang MT; Hwang JM
    Nanoscale Res Lett; 2014; 9(1):433. PubMed ID: 25206318
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.
    Liao SY; Lu CC; Chang T; Huang CF; Cheng CH; Chang LB
    J Nanosci Nanotechnol; 2014 Aug; 14(8):6243-6. PubMed ID: 25936096
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications.
    Lee MW; Lin YC; Hsu HT; Gamiz F; Chang EY
    Micromachines (Basel); 2023 Apr; 14(5):. PubMed ID: 37241557
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
    Haziq M; Falina S; Manaf AA; Kawarada H; Syamsul M
    Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557432
    [TBL] [Abstract][Full Text] [Related]  

  • 45. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
    Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
    Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO
    Yeom MJ; Yang JY; Lee CH; Heo J; Chung RBK; Yoo G
    Micromachines (Basel); 2021 Nov; 12(12):. PubMed ID: 34945290
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications.
    Li C; Chen X; Wang Z
    Micromachines (Basel); 2024 Feb; 15(3):. PubMed ID: 38542577
    [TBL] [Abstract][Full Text] [Related]  

  • 48. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
    Tajalli A; Borga M; Meneghini M; De Santi C; Benazzi D; Besendörfer S; Püsche R; Derluyn J; Degroote S; Germain M; Kabouche R; Abid I; Meissner E; Zanoni E; Medjdoub F; Meneghesso G
    Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31963553
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor.
    Baek SH; Lee GW; Cho CY; Lee SN
    Sci Rep; 2021 Mar; 11(1):7172. PubMed ID: 33785795
    [TBL] [Abstract][Full Text] [Related]  

  • 50. Impact of Charge-Trapping Effects on Reliability Instability in Al
    Amir W; Chakraborty S; Kwon HM; Kim TW
    Materials (Basel); 2023 Jun; 16(12):. PubMed ID: 37374651
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors.
    Chakraborty S; Kim TW
    Micromachines (Basel); 2022 Jan; 13(1):. PubMed ID: 35056249
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Performance Enhancement in N
    Yang SK; Mazumder S; Wu ZG; Wang YH
    Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33801062
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer.
    Hong KB; Peng CY; Lin WC; Chen KL; Chen SC; Kuo HC; Chang EY; Lin CH
    Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984926
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Seed Dibbling Method for the Growth of High-Quality Diamond on GaN.
    Soleimanzadeh R; Naamoun M; Floriduz A; Khadar RA; van Erp R; Matioli E
    ACS Appl Mater Interfaces; 2021 Sep; 13(36):43516-43523. PubMed ID: 34464085
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation.
    Alathbah M; Elgaid K
    Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422436
    [TBL] [Abstract][Full Text] [Related]  

  • 56. Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate.
    Weng YC; Hsiao MY; Lin CH; Lan YP; Chang EY
    Materials (Basel); 2023 Apr; 16(9):. PubMed ID: 37176258
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors.
    Song Y; Chen C; Wang Q; Feng J; Fu R; Zhang X; Cao L
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258152
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch.
    Yu X; Li Y; He R; Wen Y; Chen R; Xu B; Gao Y
    Nanoscale Horiz; 2024 Jul; ():. PubMed ID: 39016031
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier.
    Harrouche K; Venkatachalam S; Ben-Hammou L; Grandpierron F; Okada E; Medjdoub F
    Micromachines (Basel); 2023 Jan; 14(2):. PubMed ID: 36837991
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Anisotropic thermal conductivity of AlGaN/GaN superlattices.
    Filatova-Zalewska A; Litwicki Z; Moszak K; Olszewski W; Opołczyńska K; Pucicki D; Serafińczuk J; Hommel D; Jeżowski A
    Nanotechnology; 2021 Feb; 32(7):075707. PubMed ID: 33120365
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 10.