359 related articles for article (PubMed ID: 33255690)
1. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
Choi S; Song S; Kim T; Shin JC; Jo JW; Park SK; Kim YH
Micromachines (Basel); 2020 Nov; 11(12):. PubMed ID: 33255690
[TBL] [Abstract][Full Text] [Related]
2. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.
Choi S; Kim KT; Park SK; Kim YH
Materials (Basel); 2019 Mar; 12(6):. PubMed ID: 30871272
[TBL] [Abstract][Full Text] [Related]
3. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
[TBL] [Abstract][Full Text] [Related]
4. High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.
Zhang Q; Shao S; Chen Z; Pecunia V; Xia K; Zhao J; Cui Z
ACS Appl Mater Interfaces; 2018 May; 10(18):15847-15854. PubMed ID: 29648790
[TBL] [Abstract][Full Text] [Related]
5. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors.
Stallings K; Smith J; Chen Y; Zeng L; Wang B; Di Carlo G; Bedzyk MJ; Facchetti A; Marks TJ
ACS Appl Mater Interfaces; 2021 Apr; 13(13):15399-15408. PubMed ID: 33779161
[TBL] [Abstract][Full Text] [Related]
6. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
[TBL] [Abstract][Full Text] [Related]
7. Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.
Yang H; Zhou X; Fu H; Chang B; Min Y; Peng H; Lu L; Zhang S
ACS Appl Mater Interfaces; 2021 Mar; 13(9):11442-11448. PubMed ID: 33591715
[TBL] [Abstract][Full Text] [Related]
8. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.
Ning H; Chen J; Fang Z; Tao R; Cai W; Yao R; Hu S; Zhu Z; Zhou Y; Yang C; Peng J
Materials (Basel); 2017 Jan; 10(1):. PubMed ID: 28772410
[TBL] [Abstract][Full Text] [Related]
9. A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.
Fan CL; Shang MC; Li BJ; Lin YZ; Wang SJ; Lee WD
Materials (Basel); 2014 Aug; 7(8):5761-5768. PubMed ID: 28788159
[TBL] [Abstract][Full Text] [Related]
10. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
Yu X; Zhou N; Smith J; Lin H; Stallings K; Yu J; Marks TJ; Facchetti A
ACS Appl Mater Interfaces; 2013 Aug; 5(16):7983-8. PubMed ID: 23876148
[TBL] [Abstract][Full Text] [Related]
11. A Direct n
Duan X; Lu C; Chuai X; Chen Q; Yang G; Geng D
Micromachines (Basel); 2022 Apr; 13(5):. PubMed ID: 35630119
[TBL] [Abstract][Full Text] [Related]
12. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.
Heo JS; Choi S; Jo JW; Kang J; Park HH; Kim YH; Park SK
Materials (Basel); 2017 Jun; 10(6):. PubMed ID: 28772972
[TBL] [Abstract][Full Text] [Related]
13. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
Cho MH; Choi CH; Jeong JK
ACS Appl Mater Interfaces; 2022 Apr; 14(16):18646-18661. PubMed ID: 35426670
[TBL] [Abstract][Full Text] [Related]
14. Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors.
Hennek JW; Xia Y; Everaerts K; Hersam MC; Facchetti A; Marks TJ
ACS Appl Mater Interfaces; 2012 Mar; 4(3):1614-9. PubMed ID: 22321212
[TBL] [Abstract][Full Text] [Related]
15. Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.
Hyung GW; Wang JX; Li ZH; Koo JR; Kwon SJ; Cho ES; Kim YK
J Nanosci Nanotechnol; 2013 Jun; 13(6):4052-5. PubMed ID: 23862447
[TBL] [Abstract][Full Text] [Related]
16. A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of
Wu G; Sahoo AK; Chen DW; Chang JW
Materials (Basel); 2018 Dec; 11(12):. PubMed ID: 30544867
[TBL] [Abstract][Full Text] [Related]
17. Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.
Fan CL; Shang MC; Li BJ; Lin YZ; Wang SJ; Lee WD; Hung BR
Materials (Basel); 2015 Apr; 8(4):1704-1713. PubMed ID: 28788026
[TBL] [Abstract][Full Text] [Related]
18. Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.
Wang JX; Hyung GW; Li ZH; Son SY; Kwon SJ; Kim YK; Cho ES
J Nanosci Nanotechnol; 2012 Jul; 12(7):5644-7. PubMed ID: 22966625
[TBL] [Abstract][Full Text] [Related]
19. Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors.
Hong SY; Kim HJ; Kim DH; Jeong HY; Song SH; Cho IT; Noh J; Yun PS; Lee SW; Park KS; Yoon S; Kang IB; Kwon HI
Sci Rep; 2019 Apr; 9(1):6588. PubMed ID: 31036883
[TBL] [Abstract][Full Text] [Related]
20. Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors.
Hur JS; Kim JO; Kim HA; Jeong JK
ACS Appl Mater Interfaces; 2019 Jun; 11(24):21675-21685. PubMed ID: 31124358
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
