These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

177 related articles for article (PubMed ID: 33289744)

  • 1. Anisotropic interfacial properties of monolayer C
    Dong MM; Zhang GP; Li ZL; Wang ML; Wang CK; Fu XX
    Phys Chem Chem Phys; 2020 Dec; 22(48):28074-28085. PubMed ID: 33289744
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Pervasive Ohmic contacts of monolayer 4-hT
    Dong MM; Zhang GP; Wang ZQ; Li ZL; Wang ML; Wang CK; Fu XX
    Nanotechnology; 2020 May; 31(22):225705. PubMed ID: 31995789
    [TBL] [Abstract][Full Text] [Related]  

  • 3. First-Principles Study on Layered C
    Chen Z; Zhang R; Yang J
    Langmuir; 2018 Feb; 34(8):2647-2653. PubMed ID: 29400982
    [TBL] [Abstract][Full Text] [Related]  

  • 4. n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces.
    Guo Y; Pan F; Ren Y; Yao B; Yang C; Ye M; Wang Y; Li J; Zhang X; Yan J; Yang J; Lu J
    Phys Chem Chem Phys; 2018 Oct; 20(37):24239-24249. PubMed ID: 30209481
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Monolayer Bismuthene-Metal Contacts: A Theoretical Study.
    Guo Y; Pan F; Ye M; Sun X; Wang Y; Li J; Zhang X; Zhang H; Pan Y; Song Z; Yang J; Lu J
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):23128-23140. PubMed ID: 28597660
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electrical Contacts in Monolayer Arsenene Devices.
    Wang Y; Ye M; Weng M; Li J; Zhang X; Zhang H; Guo Y; Pan Y; Xiao L; Liu J; Pan F; Lu J
    ACS Appl Mater Interfaces; 2017 Aug; 9(34):29273-29284. PubMed ID: 28783298
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Isotropic Contact Properties in Monolayer GeAs Field-Effect Transistors.
    Song W; Liu H; Zou F; Niu Y; Zhao Y; Cong Y; Pan Y; Li Q
    Molecules; 2023 Nov; 28(23):. PubMed ID: 38067536
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect.
    Liu N; Zhou S; Gao N; Zhao J
    Phys Chem Chem Phys; 2018 Aug; 20(33):21732-21738. PubMed ID: 30105339
    [TBL] [Abstract][Full Text] [Related]  

  • 9. n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors.
    Shi B; Wang Y; Li J; Zhang X; Yan J; Liu S; Yang J; Pan Y; Zhang H; Yang J; Pan F; Lu J
    Phys Chem Chem Phys; 2018 Oct; 20(38):24641-24651. PubMed ID: 30238940
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Interfacial Properties of Anisotropic Monolayer SiAs Transistors.
    Zou F; Cong Y; Song W; Liu H; Li Y; Zhu Y; Zhao Y; Pan Y; Li Q
    Nanomaterials (Basel); 2024 Jan; 14(3):. PubMed ID: 38334509
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Tunable ohmic van der Waals-type contacts in monolayer C
    Song W; Dai J; Zou F; Niu Y; Cong Y; Li Q; Pan Y
    RSC Adv; 2024 Jan; 14(6):3820-3833. PubMed ID: 38274169
    [TBL] [Abstract][Full Text] [Related]  

  • 12. First-principles studies on the electronic and contact properties of monolayer Ga
    Zhang W; Xia CJ; Zhao XM; Zhang GQ; Li LB; Su YH; Fang QL
    Phys Chem Chem Phys; 2024 Apr; 26(15):11958-11967. PubMed ID: 38573215
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Interfacial electronic properties between PtSe
    Tian X; Zhang W; Zhang GP; Li ZL; Wang CK; Wang M
    Phys Chem Chem Phys; 2023 Apr; 25(16):11545-11554. PubMed ID: 37039540
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Graphene oxide as a promising hole injection layer for MoSâ‚‚-based electronic devices.
    Musso T; Kumar PV; Foster AS; Grossman JC
    ACS Nano; 2014 Nov; 8(11):11432-9. PubMed ID: 25347209
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Sugar Molecules Detection via C
    Wasfi A; Awwad S; Hussein M; Awwad F
    Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839068
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Contact Effect of ReS
    Park JY; Joe HE; Yoon HS; Yoo S; Kim T; Kang K; Min BK; Jun SC
    ACS Appl Mater Interfaces; 2017 Aug; 9(31):26325-26332. PubMed ID: 28718280
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.
    Zhao P; Li J; Wei W; Sun Q; Jin H; Huang B; Dai Y
    Phys Chem Chem Phys; 2017 Oct; 19(40):27233-27239. PubMed ID: 28990022
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.
    Su J; Feng L; Zhang Y; Liu Z
    Phys Chem Chem Phys; 2016 Jun; 18(25):16882-9. PubMed ID: 27282959
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Mechanistic understanding of the interfacial properties of metal-PtSe
    Qi L; Che M; Liu M; Wang B; Zhang N; Zou Y; Sun X; Shi Z; Li D; Li S
    Nanoscale; 2023 Aug; 15(32):13252-13261. PubMed ID: 37548442
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Graphdiyne-metal contacts and graphdiyne transistors.
    Pan Y; Wang Y; Wang L; Zhong H; Quhe R; Ni Z; Ye M; Mei WN; Shi J; Guo W; Yang J; Lu J
    Nanoscale; 2015 Feb; 7(5):2116-27. PubMed ID: 25562182
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.