These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

174 related articles for article (PubMed ID: 33368706)

  • 1. A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon.
    Ge R; Wu X; Liang L; Hus SM; Gu Y; Okogbue E; Chou H; Shi J; Zhang Y; Banerjee SK; Jung Y; Lee JC; Akinwande D
    Adv Mater; 2021 Feb; 33(7):e2007792. PubMed ID: 33368706
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Thinnest Nonvolatile Memory Based on Monolayer h-BN.
    Wu X; Ge R; Chen PA; Chou H; Zhang Z; Zhang Y; Banerjee S; Chiang MH; Lee JC; Akinwande D
    Adv Mater; 2019 Apr; 31(15):e1806790. PubMed ID: 30773734
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.
    Ge R; Wu X; Kim M; Shi J; Sonde S; Tao L; Zhang Y; Lee JC; Akinwande D
    Nano Lett; 2018 Jan; 18(1):434-441. PubMed ID: 29236504
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Understanding of multiple resistance states by current sweeping in MoS
    Wu X; Ge R; Akinwande D; Lee JC
    Nanotechnology; 2020 Nov; 31(46):465206. PubMed ID: 32647100
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Vertical MoS
    Xu R; Jang H; Lee MH; Amanov D; Cho Y; Kim H; Park S; Shin HJ; Ham D
    Nano Lett; 2019 Apr; 19(4):2411-2417. PubMed ID: 30896171
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer.
    Yang SJ; Liang L; Lee Y; Gu Y; Fatheema J; Kutagulla S; Kim D; Kim M; Kim S; Akinwande D
    ACS Nano; 2024 Jan; 18(4):3313-3322. PubMed ID: 38226861
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Statistical Analysis of Uniform Switching Characteristics of Ta
    Jin S; Kwon JD; Kim Y
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771802
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Quantum Conductance in Vertical Hexagonal Boron Nitride Memristors with Graphene-Edge Contacts.
    Xie J; Patoary MN; Rahman Laskar MA; Ignacio ND; Zhan X; Celano U; Akinwande D; Sanchez Esqueda I
    Nano Lett; 2024 Feb; 24(8):2473-2480. PubMed ID: 38252466
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Comprehensive Study of Lithium Adsorption and Diffusion on Janus Mo/WXY (X, Y = S, Se, Te) Using First-Principles and Machine Learning Approaches.
    Chaney G; Ibrahim A; Ersan F; Çakır D; Ataca C
    ACS Appl Mater Interfaces; 2021 Aug; 13(30):36388-36406. PubMed ID: 34304560
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications.
    Abnavi A; Ahmadi R; Hasani A; Fawzy M; Mohammadzadeh MR; De Silva T; Yu N; Adachi MM
    ACS Appl Mater Interfaces; 2021 Sep; 13(38):45843-45853. PubMed ID: 34542262
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics.
    Tsurumaki-Fukuchi A; Katase T; Ohta H; Arita M; Takahashi Y
    ACS Appl Mater Interfaces; 2023 Apr; 15(13):16842-16852. PubMed ID: 36952672
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications.
    Khot AC; Dongale TD; Nirmal KA; Sung JH; Lee HJ; Nikam RD; Kim TG
    ACS Appl Mater Interfaces; 2022 Mar; 14(8):10546-10557. PubMed ID: 35179364
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Observation of single-defect memristor in an MoS
    Hus SM; Ge R; Chen PA; Liang L; Donnelly GE; Ko W; Huang F; Chiang MH; Li AP; Akinwande D
    Nat Nanotechnol; 2021 Jan; 16(1):58-62. PubMed ID: 33169008
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Non-volatile resistive switching mechanism in single-layer MoS
    Boschetto G; Carapezzi S; Todri-Sanial A
    Nanoscale Adv; 2023 Aug; 5(16):4203-4212. PubMed ID: 37560426
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors.
    Chen H; Kang Y; Pu D; Tian M; Wan N; Xu Y; Yu B; Jie W; Zhao Y
    Nanoscale; 2023 Mar; 15(9):4309-4316. PubMed ID: 36756937
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Resistive switching mechanism of MoS
    Li XD; Wang BQ; Chen NK; Li XB
    Nanotechnology; 2023 Feb; 34(20):. PubMed ID: 36706447
    [TBL] [Abstract][Full Text] [Related]  

  • 17. An ultrathin memristor based on a two-dimensional WS
    Zhang W; Gao H; Deng C; Lv T; Hu S; Wu H; Xue S; Tao Y; Deng L; Xiong W
    Nanoscale; 2021 Jul; 13(26):11497-11504. PubMed ID: 34165120
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Graphene-Boron Nitride-Graphene Cross-Point Memristors with Three Stable Resistive States.
    Zhu K; Liang X; Yuan B; Villena MA; Wen C; Wang T; Chen S; Hui F; Shi Y; Lanza M
    ACS Appl Mater Interfaces; 2019 Oct; 11(41):37999-38005. PubMed ID: 31529969
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold.
    Ghomi S; Martella C; Lee Y; Chang PH; Targa P; Serafini A; Codegoni D; Massetti C; Gharedaghi S; Lamperti A; Grazianetti C; Akinwande D; Molle A
    Adv Sci (Weinh); 2024 Oct; ():e2406703. PubMed ID: 39352313
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Bipolar Resistive Switching in 2D MoSe
    Fernandes J; Grzonka J; Araújo G; Schulman A; Silva V; Rodrigues J; Santos J; Bondarchuk O; Ferreira P; Alpuim P; Capasso A
    ACS Appl Mater Interfaces; 2024 Jan; 16(1):1767-1778. PubMed ID: 38113456
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.