These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

169 related articles for article (PubMed ID: 33396227)

  • 1. Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors.
    Castelletto S; Maksimovic J; Katkus T; Ohshima T; Johnson BC; Juodkazis S
    Nanomaterials (Basel); 2020 Dec; 11(1):. PubMed ID: 33396227
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing.
    Castelletto S; Almutairi AFM; Kumagai K; Katkus T; Hayasaki Y; Johnson BC; Juodkazis S
    Opt Lett; 2018 Dec; 43(24):6077-6080. PubMed ID: 30548008
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Laser Writing of Scalable Single Color Centers in Silicon Carbide.
    Chen YC; Salter PS; Niethammer M; Widmann M; Kaiser F; Nagy R; Morioka N; Babin C; Erlekampf J; Berwian P; Booth MJ; Wrachtrup J
    Nano Lett; 2019 Apr; 19(4):2377-2383. PubMed ID: 30882227
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.
    Radulaski M; Widmann M; Niethammer M; Zhang JL; Lee SY; Rendler T; Lagoudakis KG; Son NT; Janzén E; Ohshima T; Wrachtrup J; Vučković J
    Nano Lett; 2017 Mar; 17(3):1782-1786. PubMed ID: 28225630
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars.
    Castelletto S; Al Atem AS; Inam FA; von Bardeleben HJ; Hameau S; Almutairi AF; Guillot G; Sato SI; Boretti A; Bluet JM
    Beilstein J Nanotechnol; 2019; 10():2383-2395. PubMed ID: 31886115
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Fluorescent color centers in laser ablated 4H-SiC nanoparticles.
    Castelletto S; Almutairi AF; Thalassinos G; Lohrmann A; Buividas R; Lau DW; Reineck P; Juodkazis S; Ohshima T; Gibson BC; Johnson BC
    Opt Lett; 2017 Apr; 42(7):1297-1300. PubMed ID: 28362753
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide.
    Kraus H; Simin D; Kasper C; Suda Y; Kawabata S; Kada W; Honda T; Hijikata Y; Ohshima T; Dyakonov V; Astakhov GV
    Nano Lett; 2017 May; 17(5):2865-2870. PubMed ID: 28350468
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin-photon interface.
    Castelletto S; Inam FA; Sato SI; Boretti A
    Beilstein J Nanotechnol; 2020; 11():740-769. PubMed ID: 32461875
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide.
    Li Q; Wang JF; Yan FF; Cheng ZD; Liu ZH; Zhou K; Guo LP; Zhou X; Zhang WP; Wang XX; Huang W; Xu JS; Li CF; Guo GC
    Nanoscale; 2019 Nov; 11(43):20554-20561. PubMed ID: 31432857
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device.
    Widmann M; Niethammer M; Fedyanin DY; Khramtsov IA; Rendler T; Booker ID; Ul Hassan J; Morioka N; Chen YC; Ivanov IG; Son NT; Ohshima T; Bockstedte M; Gali A; Bonato C; Lee SY; Wrachtrup J
    Nano Lett; 2019 Oct; 19(10):7173-7180. PubMed ID: 31532999
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing.
    Fan Y; Song Y; Xu Z; Wu J; Zhu R; Li Q; Fang F
    Nanotechnology; 2021 Dec; 33(12):. PubMed ID: 34875640
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Stabilization of point-defect spin qubits by quantum wells.
    Ivády V; Davidsson J; Delegan N; Falk AL; Klimov PV; Whiteley SJ; Hruszkewycz SO; Holt MV; Heremans FJ; Son NT; Awschalom DD; Abrikosov IA; Gali A
    Nat Commun; 2019 Dec; 10(1):5607. PubMed ID: 31811137
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Metal-Dielectric Nanopillar Antenna-Resonators for Efficient Collected Photon Rate from Silicon Carbide Color Centers.
    Inam FA; Castelletto S
    Nanomaterials (Basel); 2023 Jan; 13(1):. PubMed ID: 36616105
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature.
    Wang JF; Yan FF; Li Q; Liu ZH; Liu H; Guo GP; Guo LP; Zhou X; Cui JM; Wang J; Zhou ZQ; Xu XY; Xu JS; Li CF; Guo GC
    Phys Rev Lett; 2020 Jun; 124(22):223601. PubMed ID: 32567924
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation.
    Polking MJ; Dibos AM; de Leon NP; Park H
    Adv Mater; 2018 Jan; 30(4):. PubMed ID: 29205949
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Bright near-surface silicon vacancy centers in diamond fabricated by femtosecond laser ablation.
    Rong Y; Cheng K; Ju Z; Pan C; Ma Q; Liu S; Shen S; Wu B; Jia T; E Wu ; Zeng H
    Opt Lett; 2019 Aug; 44(15):3793-3796. PubMed ID: 31368970
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga
    Wellmann PJ
    Z Anorg Allg Chem; 2017 Nov; 643(21):1312-1322. PubMed ID: 29200530
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Extreme Sub-Wavelength Structure Formation from Mid-IR Femtosecond Laser Interaction with Silicon.
    Werner K; Chowdhury E
    Nanomaterials (Basel); 2021 Apr; 11(5):. PubMed ID: 33946520
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.
    Zhang JL; Ishiwata H; Babinec TM; Radulaski M; Müller K; Lagoudakis KG; Dory C; Dahl J; Edgington R; Soulière V; Ferro G; Fokin AA; Schreiner PR; Shen ZX; Melosh NA; Vučković J
    Nano Lett; 2016 Jan; 16(1):212-7. PubMed ID: 26695059
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide.
    Riedel D; Fuchs F; Kraus H; Väth S; Sperlich A; Dyakonov V; Soltamova AA; Baranov PG; Ilyin VA; Astakhov GV
    Phys Rev Lett; 2012 Nov; 109(22):226402. PubMed ID: 23368138
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.