These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

169 related articles for article (PubMed ID: 33396227)

  • 21. Fabrication of nitrogen vacancy color centers by femtosecond pulse laser illumination.
    Liu Y; Chen G; Song M; Ci X; Wu B; Wu E; Zeng H
    Opt Express; 2013 May; 21(10):12843-8. PubMed ID: 23736503
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide.
    Mu Z; Zargaleh SA; von Bardeleben HJ; Fröch JE; Nonahal M; Cai H; Yang X; Yang J; Li X; Aharonovich I; Gao W
    Nano Lett; 2020 Aug; 20(8):6142-6147. PubMed ID: 32644809
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Robust coherent control of solid-state spin qubits using anti-Stokes excitation.
    Wang JF; Yan FF; Li Q; Liu ZH; Cui JM; Liu ZD; Gali A; Xu JS; Li CF; Guo GC
    Nat Commun; 2021 May; 12(1):3223. PubMed ID: 34050146
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors.
    Khramtsov IA; Fedyanin DY
    Materials (Basel); 2019 Jun; 12(12):. PubMed ID: 31248087
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Fiber-integrated silicon carbide silicon-vacancy-based magnetometer.
    Quan WK; Liu L; Luo QY; Liu XD; Wang JF
    Opt Lett; 2023 Mar; 48(6):1423-1426. PubMed ID: 36946943
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure.
    Soltamov VA; Yavkin BV; Tolmachev DO; Babunts RA; Badalyan AG; Davydov VY; Mokhov EN; Proskuryakov II; Orlinskii SB; Baranov PG
    Phys Rev Lett; 2015 Dec; 115(24):247602. PubMed ID: 26705655
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Femtosecond Laser-Based Modification of PDMS to Electrically Conductive Silicon Carbide.
    Nakajima Y; Hayashi S; Katayama A; Nedyalkov N; Terakawa M
    Nanomaterials (Basel); 2018 Jul; 8(7):. PubMed ID: 30037124
    [TBL] [Abstract][Full Text] [Related]  

  • 28. High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback.
    Chandrasekaran V; Titze M; Flores AR; Campbell D; Henshaw J; Jones AC; Bielejec ES; Htoon H
    Adv Sci (Weinh); 2023 Jun; 10(18):e2300190. PubMed ID: 37088736
    [TBL] [Abstract][Full Text] [Related]  

  • 29. On-Demand Generation of Neutral and Negatively Charged Silicon-Vacancy Centers in Diamond.
    Dhomkar S; Zangara PR; Henshaw J; Meriles CA
    Phys Rev Lett; 2018 Mar; 120(11):117401. PubMed ID: 29601766
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Stability and molecular pathways to the formation of spin defects in silicon carbide.
    Lee EMY; Yu A; de Pablo JJ; Galli G
    Nat Commun; 2021 Nov; 12(1):6325. PubMed ID: 34732705
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Integrated waveguides and deterministically positioned nitrogen vacancy centers in diamond created by femtosecond laser writing.
    Hadden JP; Bharadwaj V; Sotillo B; Rampini S; Osellame R; Witmer JD; Jayakumar H; Fernandez TT; Chiappini A; Armellini C; Ferrari M; Ramponi R; Barclay PE; Eaton SM
    Opt Lett; 2018 Aug; 43(15):3586-3589. PubMed ID: 30067630
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions.
    Niethammer M; Widmann M; Rendler T; Morioka N; Chen YC; Stöhr R; Hassan JU; Onoda S; Ohshima T; Lee SY; Mukherjee A; Isoya J; Son NT; Wrachtrup J
    Nat Commun; 2019 Dec; 10(1):5569. PubMed ID: 31804489
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Room temperature quantum emission from cubic silicon carbide nanoparticles.
    Castelletto S; Johnson BC; Zachreson C; Beke D; Balogh I; Ohshima T; Aharonovich I; Gali A
    ACS Nano; 2014 Aug; 8(8):7938-47. PubMed ID: 25036593
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center.
    Bracher DO; Zhang X; Hu EL
    Proc Natl Acad Sci U S A; 2017 Apr; 114(16):4060-4065. PubMed ID: 28373543
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Stark Tuning of the Silicon Vacancy in Silicon Carbide.
    Rühl M; Bergmann L; Krieger M; Weber HB
    Nano Lett; 2020 Jan; 20(1):658-663. PubMed ID: 31809057
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Germanium-Vacancy Single Color Centers in Diamond.
    Iwasaki T; Ishibashi F; Miyamoto Y; Doi Y; Kobayashi S; Miyazaki T; Tahara K; Jahnke KD; Rogers LJ; Naydenov B; Jelezko F; Yamasaki S; Nagamachi S; Inubushi T; Mizuochi N; Hatano M
    Sci Rep; 2015 Aug; 5():12882. PubMed ID: 26250337
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Spatially Modulating the Fluorescence Color of Mixed-Halide Perovskite Nanoplatelets through Direct Femtosecond Laser Writing.
    Zhou C; Cao G; Gan Z; Ou Q; Chen W; Bao Q; Jia B; Wen X
    ACS Appl Mater Interfaces; 2019 Jul; 11(29):26017-26023. PubMed ID: 31260248
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Formation of Titanium Nitride, Titanium Carbide, and Silicon Carbide Surfaces by High Power Femtosecond Laser Treatment.
    Fedorov R; Lederle F; Li M; Olszok V; Wöbbeking K; Schade W; Hübner EG
    Chempluschem; 2021 Sep; 86(9):1231-1242. PubMed ID: 33960734
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures.
    Khramtsov IA; Fedyanin DY
    Nanomaterials (Basel); 2020 Feb; 10(2):. PubMed ID: 32092962
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Photoluminescence from voids created by femtosecond-laser pulses inside cubic-BN.
    Buividas R; Aharonovich I; Seniutinas G; Wang XW; Rapp L; Rode AV; Taniguchi T; Juodkazis S
    Opt Lett; 2015 Dec; 40(24):5711-3. PubMed ID: 26670493
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.