These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

245 related articles for article (PubMed ID: 33401568)

  • 21. Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates.
    Bietti S; Esposito L; Fedorov A; Ballabio A; Martinelli A; Sanguinetti S
    Nanoscale Res Lett; 2015 Dec; 10(1):930. PubMed ID: 26058506
    [TBL] [Abstract][Full Text] [Related]  

  • 22. The structural and optical characterization of high areal density Ga(x)In(1-x)P quantum dots on GaP.
    Gerhard S; Baumann V; Höfling S; Forchel A
    Nanotechnology; 2009 Oct; 20(43):434016. PubMed ID: 19801768
    [TBL] [Abstract][Full Text] [Related]  

  • 23. GaSb/GaAs type-II quantum dots grown by droplet epitaxy.
    Liang B; Lin A; Pavarelli N; Reyner C; Tatebayashi J; Nunna K; He J; Ochalski TJ; Huyet G; Huffaker DL
    Nanotechnology; 2009 Nov; 20(45):455604. PubMed ID: 19834245
    [TBL] [Abstract][Full Text] [Related]  

  • 24. O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate.
    Abouzaid O; Mehdi H; Martin M; Moeyaert J; Salem B; David S; Souifi A; Chauvin N; Hartmann JM; Ilahi B; Morris D; Ahaitouf A; Ahaitouf A; Baron T
    Nanomaterials (Basel); 2020 Dec; 10(12):. PubMed ID: 33297597
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Growth and characterization of self-assembled InAs/InP quantum dot structures.
    Barik S; Tan HH; Wong-Leung J; Jagadish C
    J Nanosci Nanotechnol; 2010 Mar; 10(3):1525-36. PubMed ID: 20355541
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy.
    Yuan Q; Liang B; Luo S; Wang Y; Yan Q; Wang S; Fu G; Mazur YI; Maidaniuk Y; Ware ME; Salamo GJ
    Nanotechnology; 2020 Jul; 31(31):315701. PubMed ID: 32303015
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet.
    Baik M; Kyhm JH; Kang HK; Jeong KS; Kim JS; Cho MH; Song JD
    Sci Rep; 2021 Apr; 11(1):7699. PubMed ID: 33833327
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots.
    Heyn C; Gräfenstein A; Pirard G; Ranasinghe L; Deneke K; Alshaikh A; Bester G; Hansen W
    Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080018
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy.
    Rödel R; Bauer A; Kremling S; Reitzenstein S; Höfling S; Kamp M; Worschech L; Forchel A
    Nanotechnology; 2012 Jan; 23(1):015605. PubMed ID: 22156168
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
    Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
    Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots.
    Dai L; Bremner SP; Tan S; Wang S; Zhang G; Liu Z
    Nanoscale Res Lett; 2014; 9(1):278. PubMed ID: 24948897
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
    Ahmad I; Avrutin V; Morkoç H; Moore JC; Baski AA
    J Nanosci Nanotechnol; 2007 Aug; 7(8):2889-93. PubMed ID: 17685312
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.
    Park MH; Kim HS; Park SJ; Song JD; Kim SH; Lee YJ; Choi WJ; Park JH
    J Nanosci Nanotechnol; 2014 Apr; 14(4):2955-9. PubMed ID: 24734716
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography.
    Liu G; Zhao H; Zhang J; Park JH; Mawst LJ; Tansu N
    Nanoscale Res Lett; 2011 Apr; 6(1):342. PubMed ID: 21711862
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography.
    Martín-Sánchez J; Alonso-González P; Herranz J; González Y; González L
    Nanotechnology; 2009 Mar; 20(12):125302. PubMed ID: 19420463
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Zincblende InAs
    Bucci G; Zannier V; Rossi F; Musiał A; Boniecki J; Sęk G; Sorba L
    ACS Appl Mater Interfaces; 2024 May; 16(20):26491-26499. PubMed ID: 38729621
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates.
    Lee J; Wang ZhM; Kim E; Kim N; Park Sh; Salamo G
    Nanoscale Res Lett; 2009 Nov; 5(2):308-14. PubMed ID: 20671787
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.
    Ilahi B; Zribi J; Guillotte M; Arès R; Aimez V; Morris D
    Materials (Basel); 2016 Jun; 9(7):. PubMed ID: 28773633
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices.
    Wang L; Wang L; Yu J; Hao Z; Luo Y; Sun C; Han Y; Xiong B; Wang J; Li H
    ACS Appl Mater Interfaces; 2019 Jan; 11(1):1228-1238. PubMed ID: 30521305
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Strain-induced control of a pillar cavity-GaAs single quantum dot photon source.
    Yeo I; Kim D; Han IK; Song JD
    Sci Rep; 2019 Dec; 9(1):18564. PubMed ID: 31811212
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 13.