These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

310 related articles for article (PubMed ID: 33430093)

  • 1. Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.
    Ma CT; Gu ZH
    Micromachines (Basel); 2021 Jan; 12(1):. PubMed ID: 33430093
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme.
    Ma CT; Gu ZH
    Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33924185
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Impact of Gamma Radiation on Dynamic R
    Martínez PJ; Maset E; Martín-Holgado P; Morilla Y; Gilabert D; Sanchis-Kilders E
    Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31466249
    [TBL] [Abstract][Full Text] [Related]  

  • 4. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
    Roccaforte F; Greco G; Fiorenza P; Iucolano F
    Materials (Basel); 2019 May; 12(10):. PubMed ID: 31096689
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices.
    Rafin SMSH; Ahmed R; Haque MA; Hossain MK; Haque MA; Mohammed OA
    Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004900
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review.
    Zhan T; Xu M; Cao Z; Zheng C; Kurita H; Narita F; Wu YJ; Xu Y; Wang H; Song M; Wang W; Zhou Y; Liu X; Shi Y; Jia Y; Guan S; Hanajiri T; Maekawa T; Okino A; Watanabe T
    Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004933
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.
    Li F; Roccaforte F; Greco G; Fiorenza P; La Via F; Pérez-Tomas A; Evans JE; Fisher CA; Monaghan FA; Mawby PA; Jennings M
    Materials (Basel); 2021 Oct; 14(19):. PubMed ID: 34640228
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
    Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET.
    Li H; Yu R; Zhong Y; Yao R; Liao X; Chen X
    Micromachines (Basel); 2019 May; 10(5):. PubMed ID: 31083371
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.
    Lo Nigro R; Fiorenza P; Greco G; Schilirò E; Roccaforte F
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160775
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
    Haziq M; Falina S; Manaf AA; Kawarada H; Syamsul M
    Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557432
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High-voltage SiC power devices for improved energy efficiency.
    Kimoto T
    Proc Jpn Acad Ser B Phys Biol Sci; 2022; 98(4):161-189. PubMed ID: 35400694
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Vertical GaN MOSFET Power Devices.
    Langpoklakpam C; Liu AC; Hsiao YK; Lin CH; Kuo HC
    Micromachines (Basel); 2023 Oct; 14(10):. PubMed ID: 37893374
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices.
    Huang H; Li F; Sun Z; Cao Y
    Micromachines (Basel); 2018 Dec; 9(12):. PubMed ID: 30558127
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications.
    Maimon O; Li Q
    Materials (Basel); 2023 Dec; 16(24):. PubMed ID: 38138834
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.
    Bagnall KR; Moore EA; Badescu SC; Zhang L; Wang EN
    Rev Sci Instrum; 2017 Nov; 88(11):113111. PubMed ID: 29195348
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Fabrication and Evaluation of N-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods.
    Nguyen HT; Yamada H; Yamada T; Takahashi T; Shimizu M
    Materials (Basel); 2020 Feb; 13(4):. PubMed ID: 32085428
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.
    Mukherjee K; De Santi C; Borga M; Geens K; You S; Bakeroot B; Decoutere S; Diehle P; Hübner S; Altmann F; Buffolo M; Meneghesso G; Zanoni E; Meneghini M
    Materials (Basel); 2021 Apr; 14(9):. PubMed ID: 33946943
    [TBL] [Abstract][Full Text] [Related]  

  • 19. New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors.
    Shih CW; Chin A
    ACS Appl Mater Interfaces; 2016 Aug; 8(30):19187-91. PubMed ID: 27454211
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Fundamental research on semiconductor SiC and its applications to power electronics.
    Matsunami H
    Proc Jpn Acad Ser B Phys Biol Sci; 2020; 96(7):235-254. PubMed ID: 32788548
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 16.