These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

117 related articles for article (PubMed ID: 33443238)

  • 1. Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection.
    Guo Y; Liu D; Miao C; Sun J; Pang Z; Wang P; Xu M; Han N; Yang ZX
    Nanotechnology; 2021 Jan; 32(14):145203. PubMed ID: 33443238
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors.
    Chen SY; Wang CY; Ford AC; Chou JC; Wang YC; Wang FY; Ho JC; Wang HC; Javey A; Gan JY; Chen LJ; Chueh YL
    Phys Chem Chem Phys; 2013 Feb; 15(8):2654-9. PubMed ID: 23340577
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Fabrication and optical properties of GaAs/InGaAs/GaAs nanowire core-multishell quantum well heterostructures.
    Yan X; Zhang X; Li J; Wu Y; Cui J; Ren X
    Nanoscale; 2015 Jan; 7(3):1110-5. PubMed ID: 25482135
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors.
    Sun J; Peng M; Zhang Y; Zhang L; Peng R; Miao C; Liu D; Han M; Feng R; Ma Y; Dai Y; He L; Shan C; Pan A; Hu W; Yang ZX
    Nano Lett; 2019 Sep; 19(9):5920-5929. PubMed ID: 31374165
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Stable and high yield growth of GaP and In
    Scaccabarozzi A; Cattoni A; Patriarche G; Travers L; Collin S; Harmand JC; Glas F; Oehler F
    Nanoscale; 2020 Sep; 12(35):18240-18248. PubMed ID: 32856654
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Ambipolar transport in narrow bandgap semiconductor InSb nanowires.
    Dalelkhan B; Göransson DJO; Thelander C; Li K; Xing YJ; Maisi VF; Xu HQ
    Nanoscale; 2020 Apr; 12(15):8159-8165. PubMed ID: 32239037
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon.
    Ng KW; Ko WS; Chen R; Lu F; Tran TT; Li K; Chang-Hasnain CJ
    ACS Appl Mater Interfaces; 2014 Oct; 6(19):16706-11. PubMed ID: 25221844
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Ambipolar and unipolar PbSe nanowire field-effect transistors.
    Kim DK; Vemulkar TR; Oh SJ; Koh WK; Murray CB; Kagan CR
    ACS Nano; 2011 Apr; 5(4):3230-6. PubMed ID: 21405024
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Electrical characterization of composition modulated In(1-x)Sb(x) nanowire field effect transistors by scanning gate microscopy.
    Martinez-Morales AA; Penchev M; Zhong J; Jing X; Singh KV; Yengel E; Khan MI; Ozkan CS; Ozkan M
    J Nanosci Nanotechnol; 2010 Oct; 10(10):6779-82. PubMed ID: 21137796
    [TBL] [Abstract][Full Text] [Related]  

  • 10. 3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells.
    Hill MO; Schmiedeke P; Huang C; Maddali S; Hu X; Hruszkewycz SO; Finley JJ; Koblmüller G; Lauhon LJ
    ACS Nano; 2022 Dec; 16(12):20281-20293. PubMed ID: 36378999
    [TBL] [Abstract][Full Text] [Related]  

  • 11. High electron mobility InAs nanowire field-effect transistors.
    Dayeh SA; Aplin DP; Zhou X; Yu PK; Yu ET; Wang D
    Small; 2007 Feb; 3(2):326-32. PubMed ID: 17199246
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.
    Hu Y; Xiang J; Liang G; Yan H; Lieber CM
    Nano Lett; 2008 Mar; 8(3):925-30. PubMed ID: 18251518
    [TBL] [Abstract][Full Text] [Related]  

  • 13. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X; Xiong Q; Nam S; Qian F; Li Y; Lieber CM
    Nano Lett; 2007 Oct; 7(10):3214-8. PubMed ID: 17867718
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires.
    Kaladzhian M; von den Driesch N; Demarina N; Povstugar I; Zimmermann E; Jansen MM; Bae JH; Krause C; Bennemann B; Grützmacher D; Schäpers T; Pawlis A
    ACS Appl Mater Interfaces; 2024 Feb; 16(8):11035-11042. PubMed ID: 38377460
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics.
    Shen LF; Yip S; Yang ZX; Fang M; Hung T; Pun EY; Ho JC
    Sci Rep; 2015 Nov; 5():16871. PubMed ID: 26607169
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating.
    Lokteva I; Thiemann S; Gannott F; Zaumseil J
    Nanoscale; 2013 May; 5(10):4230-5. PubMed ID: 23545580
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts.
    Park H; Kim J
    Phys Chem Chem Phys; 2018 Sep; 20(35):22439-22444. PubMed ID: 30062335
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Polarized Terahertz Waves Emitted from In0.2Ga0.8As Nanowires.
    Yim JH; Irfan M; Song KJ; Lee EH; Song JD; Jho YD
    J Nanosci Nanotechnol; 2015 Aug; 15(8):6024-7. PubMed ID: 26369191
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS₂.
    Ponomarev E; Gutiérrez-Lezama I; Ubrig N; Morpurgo AF
    Nano Lett; 2015 Dec; 15(12):8289-94. PubMed ID: 26594892
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.
    Zhao Y; Candebat D; Delker C; Zi Y; Janes D; Appenzeller J; Yang C
    Nano Lett; 2012 Oct; 12(10):5331-6. PubMed ID: 22950905
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.