305 related articles for article (PubMed ID: 33448781)
21. A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of
Wu G; Sahoo AK; Chen DW; Chang JW
Materials (Basel); 2018 Dec; 11(12):. PubMed ID: 30544867
[TBL] [Abstract][Full Text] [Related]
22. Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors.
Wu G; Sahoo AK
Nanomaterials (Basel); 2020 Nov; 10(12):. PubMed ID: 33260908
[TBL] [Abstract][Full Text] [Related]
23. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
Zhang Y; Xie H; Dong C
Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
[TBL] [Abstract][Full Text] [Related]
24. Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.
Park JW; Tak YJ; Na JW; Lee H; Kim WG; Kim HJ
ACS Appl Mater Interfaces; 2018 May; 10(19):16613-16622. PubMed ID: 29682960
[TBL] [Abstract][Full Text] [Related]
25. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS
Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447
[TBL] [Abstract][Full Text] [Related]
26. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O
Liu WS; Hsu CH; Jiang Y; Lai YC; Kuo HC
Membranes (Basel); 2021 Dec; 12(1):. PubMed ID: 35054574
[TBL] [Abstract][Full Text] [Related]
27. Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics.
Na JW; Kim HJ; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2018 Oct; 10(43):37207-37215. PubMed ID: 30338976
[TBL] [Abstract][Full Text] [Related]
28. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
[TBL] [Abstract][Full Text] [Related]
29. Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors.
Lee J; Choi CH; Kim T; Hur J; Kim MJ; Kim EH; Lim JH; Kang Y; Jeong JK
ACS Appl Mater Interfaces; 2022 Dec; 14(51):57016-57027. PubMed ID: 36511797
[TBL] [Abstract][Full Text] [Related]
30. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.
Choi S; Kim KT; Park SK; Kim YH
Materials (Basel); 2019 Mar; 12(6):. PubMed ID: 30871272
[TBL] [Abstract][Full Text] [Related]
31. Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.
Fan CL; Shang MC; Li BJ; Lin YZ; Wang SJ; Lee WD; Hung BR
Materials (Basel); 2015 Apr; 8(4):1704-1713. PubMed ID: 28788026
[TBL] [Abstract][Full Text] [Related]
32. Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing.
Shin JW; Cho WJ
J Nanosci Nanotechnol; 2020 Jul; 20(7):4276-4281. PubMed ID: 31968457
[TBL] [Abstract][Full Text] [Related]
33. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al
Shao Y; Wu X; Zhang MN; Liu WJ; Ding SJ
Nanoscale Res Lett; 2019 Apr; 14(1):122. PubMed ID: 30941527
[TBL] [Abstract][Full Text] [Related]
34. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
Cho MH; Choi CH; Jeong JK
ACS Appl Mater Interfaces; 2022 Apr; 14(16):18646-18661. PubMed ID: 35426670
[TBL] [Abstract][Full Text] [Related]
35. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
[TBL] [Abstract][Full Text] [Related]
36. Mobility and current boosting of In-Ga-Zn-O thin-film transistors with metal capping layer oxidation.
Sun H; Bang J; Ju H; Choi S; Lee Y; Kim S; Noh Y; Choi E; Jeong JK; Lee SB
Nanotechnology; 2024 Jun; 35(35):. PubMed ID: 38838661
[TBL] [Abstract][Full Text] [Related]
37. Ultra-thin gate insulator of atomic-layer-deposited AlO
Li J; Guan Y; Li J; Zhang Y; Zhang Y; Chan M; Wang X; Lu L; Zhang S
Nanotechnology; 2023 Apr; 34(26):. PubMed ID: 36962937
[TBL] [Abstract][Full Text] [Related]
38. Optimizing the Properties of InGaZnO
Zhang H; Wang Y; Wang R; Zhang X; Liu C
Materials (Basel); 2019 Jul; 12(14):. PubMed ID: 31323839
[TBL] [Abstract][Full Text] [Related]
39. Amorphous IGZO TFT with High Mobility of ∼70 cm
Sheng J; Hong T; Lee HM; Kim K; Sasase M; Kim J; Hosono H; Park JS
ACS Appl Mater Interfaces; 2019 Oct; 11(43):40300-40309. PubMed ID: 31584254
[TBL] [Abstract][Full Text] [Related]
40. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
