These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
205 related articles for article (PubMed ID: 33508814)
1. Improved subthreshold swing of MoS Tao X; Xu J; Liu L; Lai PT Nanotechnology; 2021 May; 32(19):195202. PubMed ID: 33508814 [TBL] [Abstract][Full Text] [Related]
2. Optimization of Subthreshold Swing and Hysteresis in Hf Guo X; Wang F; Ma Z; Shan X; Lin X; Ji Y; Zhao X; Feng Y; Han Y; Xie Y; Song Z; Zhang K ACS Appl Mater Interfaces; 2023 Jul; 15(26):31617-31626. PubMed ID: 37339447 [TBL] [Abstract][Full Text] [Related]
3. Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf Wang Y; Liu S; Luo Z; Gan H; Wang H; Li J; Du X; Zhao H; Shen S; Yin Y; Li X ACS Appl Mater Interfaces; 2023 Sep; 15(36):42764-42773. PubMed ID: 37655492 [TBL] [Abstract][Full Text] [Related]
4. Steep-Slope and Hysteresis-Free MoS Tao X; Liu L; Xu J Nanomaterials (Basel); 2022 Dec; 12(24):. PubMed ID: 36558206 [TBL] [Abstract][Full Text] [Related]
5. Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS McGuire FA; Lin YC; Price K; Rayner GB; Khandelwal S; Salahuddin S; Franklin AD Nano Lett; 2017 Aug; 17(8):4801-4806. PubMed ID: 28691824 [TBL] [Abstract][Full Text] [Related]
6. Expeditiously Crystallized Pure Orthorhombic-Hf Cho H; Pujar P; Choi M; Naqi M; Cho Y; Rho HY; Lee J; Kim S ACS Appl Mater Interfaces; 2021 Dec; 13(50):60250-60260. PubMed ID: 34894665 [TBL] [Abstract][Full Text] [Related]
7. Effect of ferroelectric and interface films on the tunneling electroresistance of the Al Shekhawat A; Hsain HA; Lee Y; Jones JL; Moghaddam S Nanotechnology; 2021 Sep; 32(48):. PubMed ID: 34407525 [TBL] [Abstract][Full Text] [Related]
8. Improved Ferroelectric Switching Endurance of La-Doped Hf Chernikova AG; Kozodaev MG; Negrov DV; Korostylev EV; Park MH; Schroeder U; Hwang CS; Markeev AM ACS Appl Mater Interfaces; 2018 Jan; 10(3):2701-2708. PubMed ID: 29282976 [TBL] [Abstract][Full Text] [Related]
9. Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application. Zhang X; Chen L; Sun QQ; Wang LH; Zhou P; Lu HL; Wang PF; Ding SJ; Zhang DW Nanoscale Res Lett; 2015; 10():25. PubMed ID: 25852322 [TBL] [Abstract][Full Text] [Related]
10. Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf Zou Z; Tian G; Wang D; Zhang Y; Wang J; Li Y; Tao R; Fan Z; Chen D; Zeng M; Gao X; Dai JY; Lu X; Liu JM Nanotechnology; 2021 May; 32(33):. PubMed ID: 33910189 [TBL] [Abstract][Full Text] [Related]
11. Quantification of Crystalline Phases in Hf Cervasio R; Amzallag E; Verseils M; Hemme P; Brubach JB; Infante IC; Segantini G; Rojo Romeo P; Coati A; Vlad A; Garreau Y; Resta A; Vilquin B; Creuze J; Roy P ACS Appl Mater Interfaces; 2024 Jan; 16(3):3829-3840. PubMed ID: 38214484 [TBL] [Abstract][Full Text] [Related]
12. Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs. Zhang Z; Li Y; Xu J; Tang B; Xiang J; Li J; Zhang Q; Wu Z; Yin H; Luo J; Wang W Nanoscale Res Lett; 2022 Dec; 17(1):124. PubMed ID: 36520242 [TBL] [Abstract][Full Text] [Related]
13. Interface-engineered ferroelectricity of epitaxial Hf Shi S; Xi H; Cao T; Lin W; Liu Z; Niu J; Lan D; Zhou C; Cao J; Su H; Zhao T; Yang P; Zhu Y; Yan X; Tsymbal EY; Tian H; Chen J Nat Commun; 2023 Mar; 14(1):1780. PubMed ID: 36997572 [TBL] [Abstract][Full Text] [Related]
14. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf Kim SJ; Mohan J; Kim HS; Hwang SM; Kim N; Jung YC; Sahota A; Kim K; Yu HY; Cha PR; Young CD; Choi R; Ahn J; Kim J Materials (Basel); 2020 Jul; 13(13):. PubMed ID: 32630791 [TBL] [Abstract][Full Text] [Related]
15. Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf Chouprik A; Kirtaev R; Korostylev E; Mikheev V; Spiridonov M; Negrov D Nanomaterials (Basel); 2022 Apr; 12(9):. PubMed ID: 35564195 [TBL] [Abstract][Full Text] [Related]
16. Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO Zhang Y; Fan Z; Wang D; Wang J; Zou Z; Li Y; Li Q; Tao R; Chen D; Zeng M; Gao X; Dai J; Zhou G; Lu X; Liu JM ACS Appl Mater Interfaces; 2020 Sep; 12(36):40510-40517. PubMed ID: 32805812 [TBL] [Abstract][Full Text] [Related]
17. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si. Chernikova A; Kozodaev M; Markeev A; Negrov D; Spiridonov M; Zarubin S; Bak O; Buragohain P; Lu H; Suvorova E; Gruverman A; Zenkevich A ACS Appl Mater Interfaces; 2016 Mar; 8(11):7232-7. PubMed ID: 26931409 [TBL] [Abstract][Full Text] [Related]
18. Impacts of HfZrO thickness and anneal temperature on performance of MoS Tao X; Liu L; Yang L; Xu JP Nanotechnology; 2021 Aug; 32(44):. PubMed ID: 34330115 [TBL] [Abstract][Full Text] [Related]
19. Direct comparison of ferroelectric properties in Hf Hur J; Tasneem N; Choe G; Wang P; Wang Z; Khan AI; Yu S Nanotechnology; 2020 Dec; 31(50):505707. PubMed ID: 32663805 [TBL] [Abstract][Full Text] [Related]
20. Improved Endurance of Ferroelectric Hf Chen M; Lv S; Wang B; Jiang P; Chen Y; Ding Y; Wang Y; Chen Y; Wang Y Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242025 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]