These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

111 related articles for article (PubMed ID: 33522141)

  • 1. In Situ Resistive Switching Effect Scrutinization on Co-Designed Graphene Sensor.
    Xiong F; Wang Z; Bøjesen ED; Xiong X; Zhu Z; Dong M
    Small; 2021 Feb; 17(8):e2007053. PubMed ID: 33522141
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States.
    Nandakumar SR; Minvielle M; Nagar S; Dubourdieu C; Rajendran B
    Nano Lett; 2016 Mar; 16(3):1602-8. PubMed ID: 26849776
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
    Li Y; Long S; Liu Q; Lv H; Liu M
    Small; 2017 Sep; 13(35):. PubMed ID: 28417548
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications.
    Milano G; Aono M; Boarino L; Celano U; Hasegawa T; Kozicki M; Majumdar S; Menghini M; Miranda E; Ricciardi C; Tappertzhofen S; Terabe K; Valov I
    Adv Mater; 2022 Aug; 34(32):e2201248. PubMed ID: 35404522
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol.
    Ivanov AI; Nebogatikova NA; Kotin IA; Smagulova SA; Antonova IV
    Nanotechnology; 2019 Jun; 30(25):255701. PubMed ID: 30836347
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Guiding the Growth of a Conductive Filament by Nanoindentation To Improve Resistive Switching.
    Sun Y; Song C; Yin J; Chen X; Wan Q; Zeng F; Pan F
    ACS Appl Mater Interfaces; 2017 Oct; 9(39):34064-34070. PubMed ID: 28901743
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Formation and rupture of Ag conductive bridge in ZrO2-based resistive switching memory.
    Lin CC; Chang YP
    J Nanosci Nanotechnol; 2012 Mar; 12(3):2437-41. PubMed ID: 22755070
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects.
    Zhao X; Ma J; Xiao X; Liu Q; Shao L; Chen D; Liu S; Niu J; Zhang X; Wang Y; Cao R; Wang W; Di Z; Lv H; Long S; Liu M
    Adv Mater; 2018 Apr; 30(14):e1705193. PubMed ID: 29436065
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Unveiling the tunneling phenomena in graphene-graphene homo-junctions for emerging device applications.
    Kaur A; Singh RC
    J Phys Condens Matter; 2019 Nov; 31(47):475303. PubMed ID: 31394514
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Quantum conductors formation and resistive switching memory effects in zirconia nanotubes.
    Vokhmintsev A; Petrenyov I; Kamalov R; Weinstein I
    Nanotechnology; 2021 Nov; 33(7):. PubMed ID: 34624881
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Phototunable Biomemory Based on Light-Mediated Charge Trap.
    Lv Z; Wang Y; Chen Z; Sun L; Wang J; Chen M; Xu Z; Liao Q; Zhou L; Chen X; Li J; Zhou K; Zhou Y; Zeng YJ; Han ST; Roy VAL
    Adv Sci (Weinh); 2018 Sep; 5(9):1800714. PubMed ID: 30250806
    [TBL] [Abstract][Full Text] [Related]  

  • 12. In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure.
    Kim S; Jung HJ; Kim JC; Lee KS; Park SS; Dravid VP; He K; Jeong HY
    ACS Nano; 2018 Jul; 12(7):7335-7342. PubMed ID: 29985600
    [TBL] [Abstract][Full Text] [Related]  

  • 13. TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices.
    Bejtka K; Milano G; Ricciardi C; Pirri CF; Porro S
    ACS Appl Mater Interfaces; 2020 Jul; 12(26):29451-29460. PubMed ID: 32508083
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Tunable electroluminescence in planar graphene/SiO(2) memristors.
    He C; Li J; Wu X; Chen P; Zhao J; Yin K; Cheng M; Yang W; Xie G; Wang D; Liu D; Yang R; Shi D; Li Z; Sun L; Zhang G
    Adv Mater; 2013 Oct; 25(39):5593-8. PubMed ID: 23922289
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Graphene-Boron Nitride-Graphene Cross-Point Memristors with Three Stable Resistive States.
    Zhu K; Liang X; Yuan B; Villena MA; Wen C; Wang T; Chen S; Hui F; Shi Y; Lanza M
    ACS Appl Mater Interfaces; 2019 Oct; 11(41):37999-38005. PubMed ID: 31529969
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators.
    You BK; Kim JM; Joe DJ; Yang K; Shin Y; Jung YS; Lee KJ
    ACS Nano; 2016 Oct; 10(10):9478-9488. PubMed ID: 27718554
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching.
    Wei L; Hu Z; Du G; Yuan Y; Wang J; Tu H; You B; Zhou S; Qu J; Liu H; Zheng R; Hu Y; Du J
    Adv Mater; 2018 Jul; 30(30):e1801885. PubMed ID: 29892982
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Graphene oxide thin films for flexible nonvolatile memory applications.
    Jeong HY; Kim JY; Kim JW; Hwang JO; Kim JE; Lee JY; Yoon TH; Cho BJ; Kim SO; Ruoff RS; Choi SY
    Nano Lett; 2010 Nov; 10(11):4381-6. PubMed ID: 20919689
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States.
    Zhao D; Qiao S; Luo Y; Chen A; Zhang P; Zheng P; Sun Z; Guo M; Chiang FK; Wu J; Luo J; Li J; Kokado S; Wang Y; Zhao Y
    ACS Appl Mater Interfaces; 2017 Mar; 9(12):10835-10846. PubMed ID: 28266833
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots.
    Wang C; He W; Tong Y; Zhang Y; Huang K; Song L; Zhong S; Ganeshkumar R; Zhao R
    Small; 2017 May; 13(20):. PubMed ID: 28296020
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.