These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

149 related articles for article (PubMed ID: 33530451)

  • 1. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT.
    Niu D; Wang Q; Li W; Chen C; Xu J; Jiang L; Feng C; Xiao H; Wang Q; Xu X; Wang X
    Micromachines (Basel); 2021 Jan; 12(2):. PubMed ID: 33530451
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors.
    Dai P; Wang S; Lu H
    Micromachines (Basel); 2024 Feb; 15(3):. PubMed ID: 38542568
    [TBL] [Abstract][Full Text] [Related]  

  • 3. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
    Hong S; Rana Au; Heo JW; Kim HS
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.
    Chien CY; Wu WH; You YH; Lin JH; Lee CY; Hsu WC; Kuan CH; Lin RM
    Nanoscale Res Lett; 2017 Dec; 12(1):420. PubMed ID: 28629208
    [TBL] [Abstract][Full Text] [Related]  

  • 5. a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.
    Song W; Wang R; Wang X; Guo D; Chen H; Zhu Y; Liu L; Zhou Y; Sun Q; Wang L; Li S
    ACS Appl Mater Interfaces; 2017 Nov; 9(47):41435-41442. PubMed ID: 29111660
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.
    Heo JW; Kim YJ; Kim HS
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9436-42. PubMed ID: 25971079
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
    Dong Y; Son DH; Dai Q; Lee JH; Won CH; Kim JG; Chen D; Lee JH; Lu H; Zhang R; Zheng Y
    Sensors (Basel); 2018 Apr; 18(5):. PubMed ID: 29695112
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
    Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
    Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
    Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
    [TBL] [Abstract][Full Text] [Related]  

  • 11. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
    Roccaforte F; Greco G; Fiorenza P; Iucolano F
    Materials (Basel); 2019 May; 12(10):. PubMed ID: 31096689
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
    Lee HP; Perozek J; Rosario LD; Bayram C
    Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN.
    Jung JH; Cho MS; Jang WD; Lee SH; Jang J; Bae JH; Kang IM
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4678-4683. PubMed ID: 32126640
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
    Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
    Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
    Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
    Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
    Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
    J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor.
    Jiang C; Liu T; Du C; Huang X; Liu M; Zhao Z; Li L; Pu X; Zhai J; Hu W; Lin Wang Z
    Nanotechnology; 2017 Nov; 28(45):455203. PubMed ID: 29039359
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.
    Kang WS; Choi JH; Kim D; Kim JH; Lee JH; Min BG; Kang DM; Choi JH; Kim HS
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258177
    [TBL] [Abstract][Full Text] [Related]  

  • 19. A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al
    Chen L; Lu Z; Fu C; Bi Z; Que M; Sun J; Sun Y
    Micromachines (Basel); 2024 Jan; 15(1):. PubMed ID: 38258220
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor.
    Wang Z; Cao Y; Zhang X; Chen C; Wu L; Ma M; Lv H; Lv L; Zheng X; Tian W; Ma X; Hao Y
    Micromachines (Basel); 2023 Oct; 14(10):. PubMed ID: 37893385
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.