222 related articles for article (PubMed ID: 33555178)
1. Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment.
Zhang J; Huang W; Chang KC; Shi Y; Zhao C; Wang X; Meng H; Zhang S; Zhang M
ACS Appl Mater Interfaces; 2021 Feb; 13(7):8584-8594. PubMed ID: 33555178
[TBL] [Abstract][Full Text] [Related]
2. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
[TBL] [Abstract][Full Text] [Related]
3. Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors.
Chang KC; Hu L; Qi K; Li L; Lin X; Zhang S; Wang Z; Lai YC; Liu HJ; Kuo TP
Nanoscale; 2021 Mar; 13(11):5700-5705. PubMed ID: 33565548
[TBL] [Abstract][Full Text] [Related]
4. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
[TBL] [Abstract][Full Text] [Related]
5. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
Everaerts K; Zeng L; Hennek JW; Camacho DI; Jariwala D; Bedzyk MJ; Hersam MC; Marks TJ
ACS Appl Mater Interfaces; 2013 Nov; 5(22):11884-93. PubMed ID: 24187917
[TBL] [Abstract][Full Text] [Related]
6. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
[TBL] [Abstract][Full Text] [Related]
7. Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability.
Han KL; Han JH; Kim BS; Jeong HJ; Choi JM; Hwang JE; Oh S; Park JS
ACS Appl Mater Interfaces; 2020 Jan; 12(3):3784-3791. PubMed ID: 31878779
[TBL] [Abstract][Full Text] [Related]
8. Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics.
Na JW; Kim HJ; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2018 Oct; 10(43):37207-37215. PubMed ID: 30338976
[TBL] [Abstract][Full Text] [Related]
9. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
Cho MH; Choi CH; Jeong JK
ACS Appl Mater Interfaces; 2022 Apr; 14(16):18646-18661. PubMed ID: 35426670
[TBL] [Abstract][Full Text] [Related]
10. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics.
Tiwari N; Rajput M; John RA; Kulkarni MR; Nguyen AC; Mathews N
ACS Appl Mater Interfaces; 2018 Sep; 10(36):30506-30513. PubMed ID: 30129368
[TBL] [Abstract][Full Text] [Related]
11. Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.
Kwon JH; Park J; Lee MK; Park JW; Jeon Y; Shin JB; Nam M; Kim CK; Choi YK; Choi KC
ACS Appl Mater Interfaces; 2018 May; 10(18):15829-15840. PubMed ID: 29672018
[TBL] [Abstract][Full Text] [Related]
12. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.
Fan CL; Tseng FP; Tseng CY
Materials (Basel); 2018 May; 11(5):. PubMed ID: 29772767
[TBL] [Abstract][Full Text] [Related]
13. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
Wu CH; Chang KM; Chen YM; Zhang YX; Cheng CY
J Nanosci Nanotechnol; 2019 Apr; 19(4):2189-2192. PubMed ID: 30486965
[TBL] [Abstract][Full Text] [Related]
14. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
Kim SH; Cho WJ
J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
[TBL] [Abstract][Full Text] [Related]
15. Mechanically Durable Organic/High-
Kim GI; Jung J; Min WK; Kim MS; Jung S; Choi DH; Chung J; Kim HJ
ACS Appl Mater Interfaces; 2022 Jun; 14(24):28085-28096. PubMed ID: 35680562
[TBL] [Abstract][Full Text] [Related]
16. Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers.
Chung JM; Zhang X; Shang F; Kim JH; Wang XL; Liu S; Yang B; Xiang Y
Nanoscale Res Lett; 2018 May; 13(1):164. PubMed ID: 29845334
[TBL] [Abstract][Full Text] [Related]
17. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
[TBL] [Abstract][Full Text] [Related]
18. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O
Liu WS; Hsu CH; Jiang Y; Lai YC; Kuo HC
Membranes (Basel); 2021 Dec; 12(1):. PubMed ID: 35054574
[TBL] [Abstract][Full Text] [Related]
19. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors.
Stallings K; Smith J; Chen Y; Zeng L; Wang B; Di Carlo G; Bedzyk MJ; Facchetti A; Marks TJ
ACS Appl Mater Interfaces; 2021 Apr; 13(13):15399-15408. PubMed ID: 33779161
[TBL] [Abstract][Full Text] [Related]
20. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]