These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

315 related articles for article (PubMed ID: 33652819)

  • 1. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films.
    Lin KW; Wang TY; Chang YC
    Polymers (Basel); 2021 Feb; 13(5):. PubMed ID: 33652819
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
    Lee KJ; Wang LW; Chiang TK; Wang YH
    Materials (Basel); 2015 Oct; 8(10):7191-7198. PubMed ID: 28793630
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.
    Chen KH; Cheng CM; Chen ML; Pan YY
    Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839057
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide.
    Wu WT; Wu JJ; Chen JS
    ACS Appl Mater Interfaces; 2011 Jul; 3(7):2616-21. PubMed ID: 21702504
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Resistance Switching Characteristics Induced by O
    Chen PH; Chang TC; Chang KC; Tsai TM; Pan CH; Chen MC; Su YT; Lin CY; Tseng YT; Huang HC; Wu H; Deng N; Qian H; Sze SM
    ACS Appl Mater Interfaces; 2017 Jan; 9(3):3149-3155. PubMed ID: 28072511
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Influences of electrode materials on the resistive memory switching properties of ZnOxS1-x:Mn thin films.
    Han Y; Chung I; Park S; Cho K; Kim S
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6208-11. PubMed ID: 24205630
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Point contact resistive switching memory based on self-formed interface of Al/ITO.
    Li Q; Qiu L; Wei X; Dai B; Zeng H
    Sci Rep; 2016 Jul; 6():29347. PubMed ID: 27383005
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.
    Sun B; Guo T; Zhou G; Ranjan S; Hou W; Hou Y; Zhao Y
    J Colloid Interface Sci; 2019 Oct; 553():682-687. PubMed ID: 31252184
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.
    Park SP; Tak YJ; Kim HJ; Lee JH; Yoo H; Kim HJ
    Adv Mater; 2018 Jun; 30(26):e1800722. PubMed ID: 29761552
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO
    Chen KH; Cheng CM; Wang NF; Kao MC
    Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570498
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Role of sulphur in resistive switching behavior of natural rubber-based memory.
    Awais M; Othman N; Shafiq MD; Zhao F; Cheong KY
    Nanotechnology; 2024 Oct; ():. PubMed ID: 39423830
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Bipolar Switching Characteristics of Transparent WO
    Kim J; Park J; Kim S
    Materials (Basel); 2022 Oct; 15(20):. PubMed ID: 36295253
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device.
    Choi JY; Yu HC; Lee J; Jeon J; Im J; Jang J; Jin SW; Kim KK; Cho S; Chung CM
    Polymers (Basel); 2018 Aug; 10(8):. PubMed ID: 30960826
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology.
    Roy A; Kumari K; Majumder S; Ray SJ
    ACS Appl Bio Mater; 2024 Aug; 7(8):5147-5157. PubMed ID: 38976598
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO
    Lee KJ; Lin WS; Wang LW; Lin HN; Wang YH
    Nanomaterials (Basel); 2022 Dec; 12(24):. PubMed ID: 36558265
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO
    Mahata C; Kang M; Kim S
    Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33092042
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.
    Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
    Nanoscale Res Lett; 2016 Dec; 11(1):224. PubMed ID: 27117634
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Resistive Switching Memory Devices Based on Body Fluid of
    Wang L; Wen D
    Micromachines (Basel); 2019 Aug; 10(8):. PubMed ID: 31426438
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.
    Ahn Y; Shin HW; Lee TH; Kim WH; Son JY
    Nanoscale; 2018 Jul; 10(28):13443-13448. PubMed ID: 29972166
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Probing the Mechanism for Bipolar Resistive Switching in Annealed Graphene Oxide Thin Films.
    Saini P; Singh M; Thakur J; Patil R; Ma YR; Tandon RP; Singh SP; Mahapatro AK
    ACS Appl Mater Interfaces; 2018 Feb; 10(7):6521-6530. PubMed ID: 29363947
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 16.