These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
232 related articles for article (PubMed ID: 33670767)
1. Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance. Hu S; Lu K; Ning H; Yao R; Gong Y; Pan Z; Guo C; Wang J; Pang C; Gong Z; Peng J Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33670767 [TBL] [Abstract][Full Text] [Related]
2. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor. Park S; Bang S; Lee S; Park J; Ko Y; Jeon H J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652 [TBL] [Abstract][Full Text] [Related]
3. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O Liu WS; Hsu CH; Jiang Y; Lai YC; Kuo HC Membranes (Basel); 2021 Dec; 12(1):. PubMed ID: 35054574 [TBL] [Abstract][Full Text] [Related]
4. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors. Han Y; Lee DH; Cho ES; Kwon SJ; Yoo H Micromachines (Basel); 2023 Jul; 14(7):. PubMed ID: 37512704 [TBL] [Abstract][Full Text] [Related]
5. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors. Moon CJ; Kim HS ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197 [TBL] [Abstract][Full Text] [Related]
6. Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method. Tang H; Lu K; Xu Z; Ning H; Yao D; Fu X; Yang H; Luo D; Yao R; Peng J Micromachines (Basel); 2021 Aug; 12(9):. PubMed ID: 34577688 [TBL] [Abstract][Full Text] [Related]
7. Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing. Zhang X; Li Y; Li Y; Xie X; Yin L Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398954 [TBL] [Abstract][Full Text] [Related]
8. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing. Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652 [TBL] [Abstract][Full Text] [Related]
9. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. Noviyana I; Lestari AD; Putri M; Won MS; Bae JS; Heo YW; Lee HY Materials (Basel); 2017 Jun; 10(7):. PubMed ID: 28773058 [TBL] [Abstract][Full Text] [Related]
10. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors. Chen FH; Her JL; Shao YH; Matsuda YH; Pan TM Nanoscale Res Lett; 2013 Jan; 8(1):18. PubMed ID: 23294730 [TBL] [Abstract][Full Text] [Related]
11. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor. Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839 [TBL] [Abstract][Full Text] [Related]
12. High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition. Baek IH; Pyeon JJ; Han SH; Lee GY; Choi BJ; Han JH; Chung TM; Hwang CS; Kim SK ACS Appl Mater Interfaces; 2019 Apr; 11(16):14892-14901. PubMed ID: 30945837 [TBL] [Abstract][Full Text] [Related]
13. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite. Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504 [TBL] [Abstract][Full Text] [Related]
14. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition. Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825 [TBL] [Abstract][Full Text] [Related]
15. Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering. Zhong W; Li G; Lan L; Li B; Chen R RSC Adv; 2018 Oct; 8(61):34817-34822. PubMed ID: 35547050 [TBL] [Abstract][Full Text] [Related]
16. Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with Chen YM; Wu CH; Chang KM; Zhang YX; Xu N; Yu TY; Chin A J Nanosci Nanotechnol; 2020 Jul; 20(7):4110-4113. PubMed ID: 31968427 [TBL] [Abstract][Full Text] [Related]
17. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. Zhang J; Yang J; Li Y; Wilson J; Ma X; Xin Q; Song A Materials (Basel); 2017 Mar; 10(3):. PubMed ID: 28772679 [TBL] [Abstract][Full Text] [Related]
18. Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes. Hu S; Ning H; Lu K; Fang Z; Li Y; Yao R; Xu M; Wang L; Peng J; Lu X Nanomaterials (Basel); 2018 Mar; 8(4):. PubMed ID: 29584710 [TBL] [Abstract][Full Text] [Related]
19. Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device. Choi HS; Cho WJ J Nanosci Nanotechnol; 2019 Oct; 19(10):6031-6035. PubMed ID: 31026903 [TBL] [Abstract][Full Text] [Related]
20. Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers. Chung JM; Zhang X; Shang F; Kim JH; Wang XL; Liu S; Yang B; Xiang Y Nanoscale Res Lett; 2018 May; 13(1):164. PubMed ID: 29845334 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]