These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

161 related articles for article (PubMed ID: 33670823)

  • 1. Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator.
    Chen YM; Lin HC; Lee KW; Wang YH
    Materials (Basel); 2021 Feb; 14(4):. PubMed ID: 33670823
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
    Shih HY; Chu FC; Das A; Lee CY; Chen MJ; Lin RM
    Nanoscale Res Lett; 2016 Dec; 11(1):235. PubMed ID: 27129687
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al
    Huang CY; Mazumder S; Lin PC; Lee KW; Wang YH
    Materials (Basel); 2022 Oct; 15(19):. PubMed ID: 36234237
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Remarkable Reduction in I
    Mazumder S; Pal P; Lee KW; Wang YH
    Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556876
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN.
    Jung JH; Cho MS; Jang WD; Lee SH; Jang J; Bae JH; Kang IM
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4678-4683. PubMed ID: 32126640
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Performance Enhancement in N
    Yang SK; Mazumder S; Wu ZG; Wang YH
    Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33801062
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
    Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
    Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
    [TBL] [Abstract][Full Text] [Related]  

  • 8. New Submicron Low Gate Leakage In
    Packeer Mohamed MF; Mohamed Omar MF; Akbar Jalaludin Khan MF; Ghazali NA; Hairi MH; Falina S; Samsol Baharin MSN
    Micromachines (Basel); 2021 Nov; 12(12):. PubMed ID: 34945350
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.
    Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y
    Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Gate-controlled spin-orbit interaction in inas high-electron mobility transistor layers epitaxially transferred onto Si substrates.
    Kim KH; Um DS; Lee H; Lim S; Chang J; Koo HC; Oh MW; Ko H; Kim HJ
    ACS Nano; 2013 Oct; 7(10):9106-14. PubMed ID: 24016184
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT.
    Wang RR; Guo H; Tang J; Liu JP; Liu LS
    Micromachines (Basel); 2021 Nov; 12(11):. PubMed ID: 34832824
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications.
    Liu AC; Tu PT; Chen HC; Lai YY; Yeh PC; Kuo HC
    Micromachines (Basel); 2023 Aug; 14(8):. PubMed ID: 37630118
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO₂ as a Gate Dielectric.
    Lam KY; Huang JS; Zou YJ; Lee KW; Wang YH
    Materials (Basel); 2016 Oct; 9(11):. PubMed ID: 28773982
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.
    Heo JW; Kim YJ; Kim HS
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9436-42. PubMed ID: 25971079
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Oxidation-Induced Changes in the ALD-Al
    Tuominen M; Mäkelä J; Yasir M; Dahl J; Granroth S; Lehtiö JP; Félix R; Laukkanen P; Kuzmin M; Laitinen M; Punkkinen MPJ; Hedman HP; Punkkinen R; Polojärvi V; Lyytikäinen J; Tukiainen A; Guina M; Kokko K
    ACS Appl Mater Interfaces; 2018 Dec; 10(51):44932-44940. PubMed ID: 30508372
    [TBL] [Abstract][Full Text] [Related]  

  • 17. 100 nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications.
    Gardès C; Bagumako S; Desplanque L; Wichmann N; Bollaert S; Danneville F; Wallart X; Roelens Y
    ScientificWorldJournal; 2014; 2014():136340. PubMed ID: 24707193
    [TBL] [Abstract][Full Text] [Related]  

  • 18. An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency.
    Jia H; Wang X; Dong M; Zhu S; Yang Y
    Micromachines (Basel); 2021 Aug; 12(9):. PubMed ID: 34577679
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
    Chang SJ; Kim DS; Kim TW; Bae Y; Jung HW; Choi IG; Noh YS; Lee SH; Kim SI; Ahn HK; Kang DM; Lim JW
    Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903774
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.
    Tomioka K; Izhizaka F; Fukui T
    Nano Lett; 2015 Nov; 15(11):7253-7. PubMed ID: 26468962
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.