146 related articles for article (PubMed ID: 33714322)
1. Effect of Electrode Materials on the Electrical Characteristics of Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors.
Lee H; Cho K; Kim S
J Nanosci Nanotechnol; 2021 Aug; 21(8):4325-4329. PubMed ID: 33714322
[TBL] [Abstract][Full Text] [Related]
2. Improvement of On/Off Current Ratio of Amorphous In-Ga-Zn-O Thin-Film Transistor with Off-Planed Source/Drain Electrodes.
Kang MS; Cho WJ
J Nanosci Nanotechnol; 2019 Mar; 19(3):1345-1349. PubMed ID: 30469186
[TBL] [Abstract][Full Text] [Related]
3. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.
Luo D; Xu H; Zhao M; Li M; Xu M; Zou J; Tao H; Wang L; Peng J
ACS Appl Mater Interfaces; 2015 Feb; 7(6):3633-40. PubMed ID: 25619280
[TBL] [Abstract][Full Text] [Related]
4. Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors.
Hong SY; Kim HJ; Kim DH; Jeong HY; Song SH; Cho IT; Noh J; Yun PS; Lee SW; Park KS; Yoon S; Kang IB; Kwon HI
Sci Rep; 2019 Apr; 9(1):6588. PubMed ID: 31036883
[TBL] [Abstract][Full Text] [Related]
5. Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors.
Yan X; Li B; Zhang Y; Wang Y; Wang C; Chi Y; Yang X
Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004978
[TBL] [Abstract][Full Text] [Related]
6. Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment.
Chen HC; Kuo CW; Chang TC; Lai WC; Chen PH; Chen GF; Huang SP; Chen JJ; Zhou KJ; Shih CC; Tsao YC; Huang HC; Sze SM
ACS Appl Mater Interfaces; 2019 Oct; 11(43):40196-40203. PubMed ID: 31573173
[TBL] [Abstract][Full Text] [Related]
7. Effective contact resistance of zinc-tin oxide-based thin film transistors.
Kang Y; Han D; Park J; Shin S; Choi D; Park J
J Nanosci Nanotechnol; 2014 Nov; 14(11):8148-52. PubMed ID: 25958489
[TBL] [Abstract][Full Text] [Related]
8. Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.
Yang H; Zhou X; Fu H; Chang B; Min Y; Peng H; Lu L; Zhang S
ACS Appl Mater Interfaces; 2021 Mar; 13(9):11442-11448. PubMed ID: 33591715
[TBL] [Abstract][Full Text] [Related]
9. Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors.
Hennek JW; Xia Y; Everaerts K; Hersam MC; Facchetti A; Marks TJ
ACS Appl Mater Interfaces; 2012 Mar; 4(3):1614-9. PubMed ID: 22321212
[TBL] [Abstract][Full Text] [Related]
10. Monolithic metal oxide transistors.
Choi Y; Park WY; Kang MS; Yi GR; Lee JY; Kim YH; Cho JH
ACS Nano; 2015 Apr; 9(4):4288-95. PubMed ID: 25777338
[TBL] [Abstract][Full Text] [Related]
11. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.
Ning H; Chen J; Fang Z; Tao R; Cai W; Yao R; Hu S; Zhu Z; Zhou Y; Yang C; Peng J
Materials (Basel); 2017 Jan; 10(1):. PubMed ID: 28772410
[TBL] [Abstract][Full Text] [Related]
12. Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors.
Avis C; Kim Y; Jang J
Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31614961
[TBL] [Abstract][Full Text] [Related]
13. Effect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors.
Bak JY; Yang S; Ryu MK; Ko Park SH; Hwang CS; Yoon SM
ACS Appl Mater Interfaces; 2012 Oct; 4(10):5369-74. PubMed ID: 22974265
[TBL] [Abstract][Full Text] [Related]
14. A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of
Wu G; Sahoo AK; Chen DW; Chang JW
Materials (Basel); 2018 Dec; 11(12):. PubMed ID: 30544867
[TBL] [Abstract][Full Text] [Related]
15. Investigation of Intrinsic Electrical Characteristics and Contact Effects in p-Type Tin Monoxide Thin-Film Transistors Using Gated-Four-Probe Measurements.
Han YJ; Choi YJ; Jeong H; Kwon HI
J Nanosci Nanotechnol; 2015 Oct; 15(10):7582-5. PubMed ID: 26726376
[TBL] [Abstract][Full Text] [Related]
16. Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors.
Kim GB; Kim T; Bang SW; Hur JS; Choi CH; Kim MJ; Jeong JK
ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38662878
[TBL] [Abstract][Full Text] [Related]
17. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
[TBL] [Abstract][Full Text] [Related]
18. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
Choi S; Song S; Kim T; Shin JC; Jo JW; Park SK; Kim YH
Micromachines (Basel); 2020 Nov; 11(12):. PubMed ID: 33255690
[TBL] [Abstract][Full Text] [Related]
19. Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors.
Li Q; Han D; Dong J; Xu D; Li Y; Wang Y; Zhang X
Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36363916
[TBL] [Abstract][Full Text] [Related]
20. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.
Liu J; Buchholz DB; Hennek JW; Chang RP; Facchetti A; Marks TJ
J Am Chem Soc; 2010 Sep; 132(34):11934-42. PubMed ID: 20698566
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
