373 related articles for article (PubMed ID: 33801062)
21. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
[TBL] [Abstract][Full Text] [Related]
22. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.
Tzou AJ; Chu KH; Lin IF; Østreng E; Fang YS; Wu XP; Wu BW; Shen CH; Shieh JM; Yeh WK; Chang CY; Kuo HC
Nanoscale Res Lett; 2017 Dec; 12(1):315. PubMed ID: 28454481
[TBL] [Abstract][Full Text] [Related]
23. Comparative study of atomic-layer-deposited stacked (HfO2/Al2O3) and nanolaminated (HfAlOx) dielectrics on In0.53Ga0.47As.
Mahata C; Byun YC; An CH; Choi S; An Y; Kim H
ACS Appl Mater Interfaces; 2013 May; 5(10):4195-201. PubMed ID: 23611632
[TBL] [Abstract][Full Text] [Related]
24. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices.
Calzolaro A; Mikolajick T; Wachowiak A
Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160737
[TBL] [Abstract][Full Text] [Related]
25. High-κ Dielectric (HfO
Kang T; Park J; Jung H; Choi H; Lee SM; Lee N; Lee RG; Kim G; Kim SH; Kim HJ; Yang CW; Jeon J; Kim YH; Lee S
Adv Mater; 2024 Jun; 36(26):e2312747. PubMed ID: 38531112
[TBL] [Abstract][Full Text] [Related]
26. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic.
Wu TL; Tang SW; Jiang HJ
Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32028702
[TBL] [Abstract][Full Text] [Related]
27. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.
Abidin MS; Hashim AM; Sharifabad ME; Rahman SF; Sadoh T
Sensors (Basel); 2011; 11(3):3067-77. PubMed ID: 22163786
[TBL] [Abstract][Full Text] [Related]
28. High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates.
Deng S; Wei J; Zhang C; Liao D; Sun T; Yang K; Xi L; Zhang B; Luo X
Nanoscale Res Lett; 2022 Aug; 17(1):73. PubMed ID: 35951269
[TBL] [Abstract][Full Text] [Related]
29. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.
Liao SY; Lu CC; Chang T; Huang CF; Cheng CH; Chang LB
J Nanosci Nanotechnol; 2014 Aug; 14(8):6243-6. PubMed ID: 25936096
[TBL] [Abstract][Full Text] [Related]
30. Interface Optimization and Performance Enhancement of Er
Wu Q; Yu Q; He G; Wang W; Lu J; Yao B; Liu S; Fang Z
Nanomaterials (Basel); 2023 May; 13(11):. PubMed ID: 37299643
[TBL] [Abstract][Full Text] [Related]
31. Enhanced Operational Characteristics Attained by Applying HfO
Choi JH; Kang WS; Kim D; Kim JH; Lee JH; Kim KY; Min BG; Kang DM; Kim HS
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374686
[TBL] [Abstract][Full Text] [Related]
32. Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure.
Lin CF; Huang KP; Wang HW; Chen KT; Wang CJ; Kao YC; Chen H; Lin YS
ACS Omega; 2024 Jun; 9(23):25277-25282. PubMed ID: 38882064
[TBL] [Abstract][Full Text] [Related]
33. Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN
Gao X; Guo H; Wang R; Pan D; Chen P; Chen D; Lu H; Zhang R; Zheng Y
Micromachines (Basel); 2022 Aug; 13(9):. PubMed ID: 36144019
[TBL] [Abstract][Full Text] [Related]
34. A Novel AlGaN/Si
Guo J; Hu S; Li P; Jiang J; Wang R; Wang Y; Wu H
Micromachines (Basel); 2022 Mar; 13(3):. PubMed ID: 35334756
[TBL] [Abstract][Full Text] [Related]
35. Effects of HfO
Xu J; Wen M; Zhao X; Liu L; Song X; Lai PT; Tang WM
Nanotechnology; 2018 Aug; 29(34):345201. PubMed ID: 29808825
[TBL] [Abstract][Full Text] [Related]
36. Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator.
Chen YM; Lin HC; Lee KW; Wang YH
Materials (Basel); 2021 Feb; 14(4):. PubMed ID: 33670823
[TBL] [Abstract][Full Text] [Related]
37. Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications.
Wang C; Chen YC; Hsu HT; Tsao YF; Lin YC; Dee CF; Chang EY
Materials (Basel); 2021 Nov; 14(21):. PubMed ID: 34772078
[TBL] [Abstract][Full Text] [Related]
38. Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.
Heo JW; Kim YJ; Kim HS
J Nanosci Nanotechnol; 2014 Dec; 14(12):9436-42. PubMed ID: 25971079
[TBL] [Abstract][Full Text] [Related]
39. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.
Qian Q; Li B; Hua M; Zhang Z; Lan F; Xu Y; Yan R; Chen KJ
Sci Rep; 2016 Jun; 6():27676. PubMed ID: 27279454
[TBL] [Abstract][Full Text] [Related]
40. Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers.
Jung JH; Yoon YJ; Cho MS; Kim BG; Jang WD; Kang IM
J Nanosci Nanotechnol; 2019 Oct; 19(10):6008-6015. PubMed ID: 31026900
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]