These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

374 related articles for article (PubMed ID: 33801062)

  • 41. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.
    Liu AC; Huang YW; Chen HC; Kuo HC
    Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675328
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates.
    Huang CR; Chiu HC; Liu CH; Wang HC; Kao HL; Chen CT; Chang KJ
    Membranes (Basel); 2021 Oct; 11(11):. PubMed ID: 34832077
    [TBL] [Abstract][Full Text] [Related]  

  • 45. Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT.
    Jiang J; Chen Q; Hu S; Shi Y; He Z; Huang Y; Hui C; Chen Y; Wu H; Lu G
    Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837114
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.
    Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y
    Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
    [TBL] [Abstract][Full Text] [Related]  

  • 48. Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation.
    Alathbah M; Elgaid K
    Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422436
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Improved I
    Wang HC; Liu CH; Huang CR; Shih MH; Chiu HC; Kao HL; Liu X
    Materials (Basel); 2022 May; 15(10):. PubMed ID: 35629530
    [TBL] [Abstract][Full Text] [Related]  

  • 50. Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.
    Kang WS; Choi JH; Kim D; Kim JH; Lee JH; Min BG; Kang DM; Choi JH; Kim HS
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258177
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN.
    Jung JH; Cho MS; Jang WD; Lee SH; Jang J; Bae JH; Kang IM
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4678-4683. PubMed ID: 32126640
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Electrical properties and thermal stability in stack structure of HfO
    Baik M; Kang HK; Kang YS; Jeong KS; An Y; Choi S; Kim H; Song JD; Cho MH
    Sci Rep; 2017 Sep; 7(1):11337. PubMed ID: 28900097
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
    Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
    J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO₂ as a Gate Dielectric.
    Lam KY; Huang JS; Zou YJ; Lee KW; Wang YH
    Materials (Basel); 2016 Oct; 9(11):. PubMed ID: 28773982
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
    Chang SJ; Kim DS; Kim TW; Bae Y; Jung HW; Choi IG; Noh YS; Lee SH; Kim SI; Ahn HK; Kang DM; Lim JW
    Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903774
    [TBL] [Abstract][Full Text] [Related]  

  • 56. A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance.
    Liu J; Guo Y; Zhang J; Yao J; Li M; Zhang M; Chen J; Huang X; Huang C
    Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683299
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
    Hospodková A; Hájek F; Hubáček T; Gedeonová Z; Hubík P; Hývl M; Pangrác J; Dominec F; Košutová T
    ACS Appl Mater Interfaces; 2023 Apr; 15(15):19646-19652. PubMed ID: 37022802
    [TBL] [Abstract][Full Text] [Related]  

  • 58. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
    Hong S; Rana Au; Heo JW; Kim HS
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Post-annealing effect of low temperature atomic layer deposited Al
    Zheng S; Lv S; Wang C; Li Z; Dong L; Xin Q; Song A; Zhang J; Li Y
    Nanotechnology; 2024 Jan; 35(15):. PubMed ID: 38198735
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor.
    Lee DG; Sindhuri V; Jo YW; Son DH; Kang HS; Lee JH; Lee JH; Cristoloveanu S; Im KS; Lee JH
    J Nanosci Nanotechnol; 2016 May; 16(5):5049-52. PubMed ID: 27483869
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 19.