These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

142 related articles for article (PubMed ID: 33805202)

  • 1. Dry Etching Performance and Gas-Phase Parameters of C
    Lim N; Choi YS; Efremov A; Kwon KH
    Materials (Basel); 2021 Mar; 14(7):. PubMed ID: 33805202
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Plasma Parameters and Etching Characteristics of SiO
    Nam Y; Efremov A; Lee BJ; Kwon KH
    Materials (Basel); 2020 Dec; 13(23):. PubMed ID: 33271912
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns.
    Lee J; Efremov A; Yeom GY; Lim N; Kwon KH
    J Nanosci Nanotechnol; 2015 Oct; 15(10):8340-7. PubMed ID: 26726514
    [TBL] [Abstract][Full Text] [Related]  

  • 4. On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.
    Lim N; Efremov A; Yeom GY; Kwon KH
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9670-9. PubMed ID: 25971118
    [TBL] [Abstract][Full Text] [Related]  

  • 5. On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO
    Efremov A; Lee BJ; Kwon KH
    Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33804274
    [TBL] [Abstract][Full Text] [Related]  

  • 6. A Study on the Etching and Surface Characteristics of SiOC Thin Films After C
    Lee J; Choi Y; Nam Y; Lee BJ; Lee HW; Kwon KH
    J Nanosci Nanotechnol; 2021 Oct; 21(10):5157-5164. PubMed ID: 33875101
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Reactive ion etching of Si(x)Sb2Te in CF4/Ar plasma for nonvolatile phase-change memory device.
    Gu Y; Song S; Song Z; Cheng Y; Liu X; Du X; Liu B; Feng S
    J Nanosci Nanotechnol; 2013 Feb; 13(2):1594-7. PubMed ID: 23646688
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Etching characteristics and mechanism of SiN(x) films for nano-devices in CH2F2/O2/Ar inductively coupled plasma: effect of O2 mixing ratio.
    Son J; Efremov A; Yun SJ; Yeom GY; Kwonl KH
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9534-40. PubMed ID: 25971095
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C
    Metzler D; Li C; Engelmann S; Bruce RL; Joseph EA; Oehrlein GS
    J Chem Phys; 2017 Feb; 146(5):052801. PubMed ID: 28178847
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Selective Etching of Silicon in Preference to Germanium and Si
    Ahles CF; Choi JY; Wolf S; Kummel AC
    ACS Appl Mater Interfaces; 2017 Jun; 9(24):20947-20954. PubMed ID: 28537704
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO
    Kawakami M; Metzler D; Li C; Oehrlein GS
    J Vac Sci Technol A; 2016 Jul; 34(4):040603. PubMed ID: 27375342
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas.
    Li Y; Wang C; Yao Z; Kim HK; Kim NY
    Nanoscale Res Lett; 2014; 9(1):530. PubMed ID: 25278821
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Ion-Enhanced Etching Characteristics of sp
    Li J; Kim Y; Han S; Chae H
    Materials (Basel); 2021 May; 14(11):. PubMed ID: 34072492
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma.
    Kikuchi H; Takahashi K; Mukaigawa S; Takaki K; Yukimura K
    Micromachines (Basel); 2021 May; 12(6):. PubMed ID: 34067412
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Influence of dry etching on the properties of SiO
    Xie L; Liu H; Zhao J; Jiao H; Zhang J; Wang Z; Cheng X
    Appl Opt; 2020 Feb; 59(5):A128-A134. PubMed ID: 32225364
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO
    Lee Y; Kim S; Lee J; Cho C; Seong I; You S
    Sensors (Basel); 2022 Aug; 22(16):. PubMed ID: 36015787
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Database Development of SiO
    Lee Y; Yeom H; Choi D; Kim S; Lee J; Kim J; Lee H; You S
    Nanomaterials (Basel); 2022 Oct; 12(21):. PubMed ID: 36364604
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO
    Gasvoda RJ; van de Steeg AW; Bhowmick R; Hudson EA; Agarwal S
    ACS Appl Mater Interfaces; 2017 Sep; 9(36):31067-31075. PubMed ID: 28796486
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Tuning the Plasma Etching Mode for the Atomic-Scale Smoothing of Single-Crystal Silicon.
    Wu B; Zhang Y; Yi R; Deng H
    J Phys Chem Lett; 2022 Sep; 13(36):8580-8585. PubMed ID: 36073771
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma.
    Ito H; Kuwahara T; Kawaguchi K; Higuchi Y; Ozawa N; Kubo M
    Phys Chem Chem Phys; 2016 Mar; 18(11):7808-19. PubMed ID: 26911539
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.