141 related articles for article (PubMed ID: 33818097)
1. Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon.
Dubrovskii VG; Kim W; Piazza V; Güniat L; Fontcuberta I Morral A
Nano Lett; 2021 Apr; 21(7):3139-3145. PubMed ID: 33818097
[TBL] [Abstract][Full Text] [Related]
2. Phase Selection in Self-catalyzed GaAs Nanowires.
Panciera F; Baraissov Z; Patriarche G; Dubrovskii VG; Glas F; Travers L; Mirsaidov U; Harmand JC
Nano Lett; 2020 Mar; 20(3):1669-1675. PubMed ID: 32027145
[TBL] [Abstract][Full Text] [Related]
3. Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy.
Jabeen F; Grillo V; Rubini S; Martelli F
Nanotechnology; 2008 Jul; 19(27):275711. PubMed ID: 21828723
[TBL] [Abstract][Full Text] [Related]
4. Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.
Yu X; Wang H; Lu J; Zhao J; Misuraca J; Xiong P; von Molnár S
Nano Lett; 2012 Oct; 12(10):5436-42. PubMed ID: 22984828
[TBL] [Abstract][Full Text] [Related]
5. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.
Dong Z; André Y; Dubrovskii VG; Bougerol C; Leroux C; Ramdani MR; Monier G; Trassoudaine A; Castelluci D; Gil E
Nanotechnology; 2017 Mar; 28(12):125602. PubMed ID: 28140362
[TBL] [Abstract][Full Text] [Related]
6. Nonpolar GaAs Nanowires Catalyzed by Cu
Wang H; Wang A; Wang Y; Yang Z; Yang J; Han N; Chen Y
ACS Omega; 2020 Dec; 5(48):30963-30970. PubMed ID: 33324804
[TBL] [Abstract][Full Text] [Related]
7. Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111).
Biermanns A; Breuer S; Trampert A; Davydok A; Geelhaar L; Pietsch U
Nanotechnology; 2012 Aug; 23(30):305703. PubMed ID: 22751267
[TBL] [Abstract][Full Text] [Related]
8. Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption.
Fedorov VV; Dvoretckaia LN; Kirilenko DA; Mukhin IS; Dubrovskii VG
Nanotechnology; 2021 Sep; 32(49):. PubMed ID: 34433149
[TBL] [Abstract][Full Text] [Related]
9. Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.
Gil E; Dubrovskii VG; Avit G; André Y; Leroux C; Lekhal K; Grecenkov J; Trassoudaine A; Castelluci D; Monier G; Ramdani RM; Robert-Goumet C; Bideux L; Harmand JC; Glas F
Nano Lett; 2014 Jul; 14(7):3938-44. PubMed ID: 24873917
[TBL] [Abstract][Full Text] [Related]
10. XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires.
Koval OY; Fedorov VV; Bolshakov AD; Eliseev IE; Fedina SV; Sapunov GA; Udovenko SA; Dvoretckaia LN; Kirilenko DA; Burkovsky RG; Mukhin IS
Nanomaterials (Basel); 2021 Apr; 11(4):. PubMed ID: 33918690
[TBL] [Abstract][Full Text] [Related]
11. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy.
Dursap T; Vettori M; Botella C; Regreny P; Blanchard N; Gendry M; Chauvin N; Bugnet M; Danescu A; Penuelas J
Nanotechnology; 2021 Apr; 32(15):155602. PubMed ID: 33429384
[TBL] [Abstract][Full Text] [Related]
12. Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires.
Wilson DP; Sokolovskii AS; LaPierre RR; Panciera F; Glas F; Dubrovskii VG
Nanotechnology; 2020 Nov; 31(48):485602. PubMed ID: 32931461
[TBL] [Abstract][Full Text] [Related]
13. MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation.
Wu D; Tang X; Yoon HS; Wang K; Olivier A; Li X
Nanoscale Res Lett; 2015 Dec; 10(1):410. PubMed ID: 26487507
[TBL] [Abstract][Full Text] [Related]
14. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
Dheeraj DL; Munshi AM; Scheffler M; van Helvoort AT; Weman H; Fimland BO
Nanotechnology; 2013 Jan; 24(1):015601. PubMed ID: 23220972
[TBL] [Abstract][Full Text] [Related]
15. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
García Núñez C; Braña AF; López N; García BJ
Nano Lett; 2018 Jun; 18(6):3608-3615. PubMed ID: 29739187
[TBL] [Abstract][Full Text] [Related]
16. High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.
Russo-Averchi E; Vukajlovic Plestina J; Tütüncüoglu G; Matteini F; Dalmau-Mallorquí A; de la Mata M; Rüffer D; Potts HA; Arbiol J; Conesa-Boj S; Fontcuberta i Morral A
Nano Lett; 2015 May; 15(5):2869-74. PubMed ID: 25894762
[TBL] [Abstract][Full Text] [Related]
17. Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction.
Tedeschi D; Fonseka HA; Blundo E; Granados Del Águila A; Guo Y; Tan HH; Christianen PCM; Jagadish C; Polimeni A; De Luca M
ACS Nano; 2020 Sep; 14(9):11613-11622. PubMed ID: 32865391
[TBL] [Abstract][Full Text] [Related]
18. CdTe Nanowires by Au-Catalyzed Metalorganic Vapor Phase Epitaxy.
Di Carlo V; Prete P; Dubrovskii VG; Berdnikov Y; Lovergine N
Nano Lett; 2017 Jul; 17(7):4075-4082. PubMed ID: 28613888
[TBL] [Abstract][Full Text] [Related]
19. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
Yu X; Li L; Wang H; Xiao J; Shen C; Pan D; Zhao J
Nanoscale; 2016 May; 8(20):10615-21. PubMed ID: 27194599
[TBL] [Abstract][Full Text] [Related]
20. Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy.
Lin WH; Jahn U; Küpers H; Luna E; Lewis RB; Geelhaar L; Brandt O
Nanotechnology; 2017 Oct; 28(41):415703. PubMed ID: 28767046
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
