These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

194 related articles for article (PubMed ID: 33872012)

  • 1. Interfacial Electronic Properties and Tunable Contact Types in Graphene/Janus MoGeSiN
    Binh NTT; Nguyen CQ; Vu TV; Nguyen CV
    J Phys Chem Lett; 2021 Apr; 12(16):3934-3940. PubMed ID: 33872012
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Tunable Schottky barrier in Janus-
    Guo H; Lang X; Tian X; Jiang W; Wang G
    Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35817003
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe
    Lan Y; Xia LX; Huang T; Xu W; Huang GF; Hu W; Huang WQ
    Nanoscale Res Lett; 2020 Sep; 15(1):180. PubMed ID: 32955632
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures.
    Vu TV; Dao TP; Idrees M; Phuc HV; Hieu NN; Binh NTT; Dinh HB; Amin B; Nguyen CV
    Phys Chem Chem Phys; 2020 Apr; 22(15):7952-7961. PubMed ID: 32232260
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Controllable Schottky barriers and contact types of BN intercalation layers in graphene/MoSi
    Guo Y; Dong Y; Cai X; Liu L; Jia Y
    Phys Chem Chem Phys; 2022 Aug; 24(30):18331-18339. PubMed ID: 35880664
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electronic properties of a two-dimensional van der Waals MoGe
    Pham DK
    RSC Adv; 2021 Aug; 11(46):28659-28666. PubMed ID: 35478545
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures.
    Qin X; Hu W; Yang J
    Phys Chem Chem Phys; 2019 Nov; 21(42):23611-23619. PubMed ID: 31624813
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Understanding Electronic Properties and Tunable Schottky Barriers in a Graphene/Boron Selenide van der Waals Heterostructure.
    Nguyen ST; Nguyen CQ; Ang YS; Van Hoang N; Hung NM; Nguyen CV
    Langmuir; 2023 May; 39(18):6637-6645. PubMed ID: 37116116
    [TBL] [Abstract][Full Text] [Related]  

  • 9. First-principles study of controllable contact types in Janus MoSH/GaN van der Waals heterostructure.
    Liu Y; Gao T
    J Chem Phys; 2023 Sep; 159(9):. PubMed ID: 37655766
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Tunable interlayer coupling and Schottky barrier in graphene and Janus MoSSe heterostructures by applying an external field.
    Li Y; Wang J; Zhou B; Wang F; Miao Y; Wei J; Zhang B; Zhang K
    Phys Chem Chem Phys; 2018 Oct; 20(37):24109-24116. PubMed ID: 30204181
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Efficient Modulation of Schottky to Ohmic Contact in MoSi
    Wei X; Zhang M; Zhang X; Lin Y; Jiang Z; Du A
    J Phys Chem Lett; 2024 Apr; 15(14):3871-3883. PubMed ID: 38560820
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Tunability of the electronic properties and electrical contact in graphene/SiH heterostructures.
    Nguyen ST; Cuong PV; Nguyen CQ; Nguyen CV
    Phys Chem Chem Phys; 2022 Oct; 24(41):25144-25150. PubMed ID: 36239182
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Electronic properties and interfacial contact of graphene/CrSiTe
    Chen L; Jiang C; Yang M; Wang D; Shi C; Liu H; Cui G; Li X; Shi J
    Phys Chem Chem Phys; 2022 Feb; 24(7):4280-4286. PubMed ID: 35107454
    [TBL] [Abstract][Full Text] [Related]  

  • 14. First-principles study on the electronic structures and contact properties of graphene/XC (X = P, As, Sb, and Bi) van der Waals heterostructures.
    Hu X; Liu W; Yang J; Zhang S; Ye Y
    Phys Chem Chem Phys; 2021 Nov; 23(44):25136-25142. PubMed ID: 34729574
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Tunable Schottky barrier in InTe/graphene van der Waals heterostructure.
    Li H; Zhou Z; Wang H
    Nanotechnology; 2020 Aug; 31(33):335201. PubMed ID: 32348976
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi
    Nguyen CV; Nguyen CQ; Nguyen ST; Ang YS; Hieu NV
    J Phys Chem Lett; 2022 Mar; 13(11):2576-2582. PubMed ID: 35289630
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS
    Nha PH; Nguyen CV; Hieu NN; Phuc HV; Nguyen CQ
    Nanoscale Adv; 2024 Feb; 6(4):1193-1201. PubMed ID: 38356616
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field.
    Le PTT; Hieu NN; Bui LM; Phuc HV; Hoi BD; Amin B; Nguyen CV
    Phys Chem Chem Phys; 2018 Nov; 20(44):27856-27864. PubMed ID: 30398248
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Janus MoSH/WSi
    Wang Y; Zhu X; Zhang H; He S; Liu Y; Zhao W; Liu H; Qu X
    Molecules; 2024 Jul; 29(15):. PubMed ID: 39124958
    [TBL] [Abstract][Full Text] [Related]  

  • 20. First-principles calculations of the electronic properties of SiC-based bilayer and trilayer heterostructures.
    Li S; Sun M; Chou JP; Wei J; Xing H; Hu A
    Phys Chem Chem Phys; 2018 Oct; 20(38):24726-24734. PubMed ID: 30225488
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.