These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
5. Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices. Qin H; He N; Han C; Zhang M; Wang Y; Hu R; Wu J; Shao W; Saadi M; Zhang H; Hu Y; Liu Y; Wang X; Tong Y Nanomaterials (Basel); 2024 Jun; 14(11):. PubMed ID: 38869611 [TBL] [Abstract][Full Text] [Related]
6. Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures. Wang Z; Liu X; Zhou X; Yuan Y; Zhou K; Zhang D; Luo H; Sun J Adv Mater; 2022 Apr; 34(15):e2200032. PubMed ID: 35194847 [TBL] [Abstract][Full Text] [Related]
7. Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes. Liu X; Ting J; He Y; Fiagbenu MMA; Zheng J; Wang D; Frost J; Musavigharavi P; Esteves G; Kisslinger K; Anantharaman SB; Stach EA; Olsson RH; Jariwala D Nano Lett; 2022 Sep; 22(18):7690-7698. PubMed ID: 36121208 [TBL] [Abstract][Full Text] [Related]
8. Demonstration of 10 nm Ferroelectric Al Chen L; Liu C; Lee HK; Varghese B; Ip RWF; Li M; Quek ZJ; Hong Y; Wang W; Song W; Lin H; Zhu Y Materials (Basel); 2024 Jan; 17(3):. PubMed ID: 38591456 [TBL] [Abstract][Full Text] [Related]
9. Nanodomain Engineering for Programmable Ferroelectric Devices. Lipatov A; Li T; Vorobeva NS; Sinitskii A; Gruverman A Nano Lett; 2019 May; 19(5):3194-3198. PubMed ID: 30943040 [TBL] [Abstract][Full Text] [Related]
10. Speed up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors. Song L; Wang Y; Gao Q; Guo Y; Wang Q; Qian J; Jiang S; Wu B; Wang X; Shi Y; Zheng Y; Li Y ACS Appl Mater Interfaces; 2017 May; 9(21):18127-18133. PubMed ID: 28493670 [TBL] [Abstract][Full Text] [Related]
11. Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights. Halter M; Bégon-Lours L; Bragaglia V; Sousa M; Offrein BJ; Abel S; Luisier M; Fompeyrine J ACS Appl Mater Interfaces; 2020 Apr; 12(15):17725-17732. PubMed ID: 32192333 [TBL] [Abstract][Full Text] [Related]
12. Low Voltage Operating 2D MoS Zhang S; Liu Y; Zhou J; Ma M; Gao A; Zheng B; Li L; Su X; Han G; Zhang J; Shi Y; Wang X; Hao Y Nanoscale Res Lett; 2020 Aug; 15(1):157. PubMed ID: 32743764 [TBL] [Abstract][Full Text] [Related]
13. High-Performance C Li C; Li L; Zhang F; Li Z; Zhu W; Dong L; Zhao J ACS Appl Mater Interfaces; 2023 Apr; 15(13):16910-16917. PubMed ID: 36967661 [TBL] [Abstract][Full Text] [Related]
14. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory. Sakai S; Takahashi M Materials (Basel); 2010 Nov; 3(11):4950-4964. PubMed ID: 28883363 [TBL] [Abstract][Full Text] [Related]
15. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications. Singh P; Baek S; Yoo HH; Niu J; Park JH; Lee S ACS Nano; 2022 Apr; 16(4):5418-5426. PubMed ID: 35234041 [TBL] [Abstract][Full Text] [Related]
16. Ferroelectric Field-Effect Transistors Based on MoS Si M; Liao PY; Qiu G; Duan Y; Ye PD ACS Nano; 2018 Jul; 12(7):6700-6705. PubMed ID: 29944829 [TBL] [Abstract][Full Text] [Related]
17. Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer. Lee YT; Kwon H; Kim JS; Kim HH; Lee YJ; Lim JA; Song YW; Yi Y; Choi WK; Hwang DK; Im S ACS Nano; 2015 Oct; 9(10):10394-401. PubMed ID: 26370537 [TBL] [Abstract][Full Text] [Related]
18. Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse. Jiang Y; Zhang L; Wang R; Li H; Li L; Zhang S; Li X; Su J; Song X; Xia C ACS Nano; 2022 Jul; 16(7):11218-11226. PubMed ID: 35730563 [TBL] [Abstract][Full Text] [Related]
19. An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In Li X; Chen X; Deng W; Li S; An B; Chu F; Wu Y; Liu F; Zhang Y Nanoscale; 2023 Jun; 15(25):10705-10714. PubMed ID: 37318047 [TBL] [Abstract][Full Text] [Related]
20. Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure. Baek S; Yoo HH; Ju JH; Sriboriboon P; Singh P; Niu J; Park JH; Shin C; Kim Y; Lee S Adv Sci (Weinh); 2022 Jul; 9(21):e2200566. PubMed ID: 35570404 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]