151 related articles for article (PubMed ID: 33885061)
1. Electron-induced fragmentation mechanisms in organic monomers and their implications for photoresist optimization for EUV lithography.
Rathore A; Cipriani M; Huang CC; Amiaud L; Dablemont C; Lafosse A; Ingólfsson O; De Simone D; De Gendt S
Phys Chem Chem Phys; 2021 Apr; 23(15):9228-9234. PubMed ID: 33885061
[TBL] [Abstract][Full Text] [Related]
2. Fundamental understanding of chemical processes in extreme ultraviolet resist materials.
Kostko O; Xu B; Ahmed M; Slaughter DS; Ogletree DF; Closser KD; Prendergast DG; Naulleau P; Olynick DL; Ashby PD; Liu Y; Hinsberg WD; Wallraff GM
J Chem Phys; 2018 Oct; 149(15):154305. PubMed ID: 30342450
[TBL] [Abstract][Full Text] [Related]
3. Effect of Oxygen on Thermal and Radiation-Induced Chemistries in a Model Organotin Photoresist.
Frederick RT; Diulus JT; Hutchison DC; Nyman M; Herman GS
ACS Appl Mater Interfaces; 2019 Jan; 11(4):4514-4522. PubMed ID: 30606004
[TBL] [Abstract][Full Text] [Related]
4. Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material.
Tafrishi R; Torres-Diaz D; Amiaud L; Lafosse A; Ingólfsson O
Phys Chem Chem Phys; 2023 Jul; 25(27):17987-17998. PubMed ID: 37377150
[TBL] [Abstract][Full Text] [Related]
5. Role of low-energy electrons in the solubility switch of Zn-based oxocluster photoresist for extreme ultraviolet lithography.
Rohdenburg M; Thakur N; Cartaya R; Castellanos S; Swiderek P
Phys Chem Chem Phys; 2021 Aug; 23(31):16646-16657. PubMed ID: 34323899
[TBL] [Abstract][Full Text] [Related]
6. Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV.
Laffert V; Sajjadian FS; Richter R; van Setten MJ; Holzmeier F
J Chem Phys; 2024 Apr; 160(13):. PubMed ID: 38557851
[TBL] [Abstract][Full Text] [Related]
7. Fluorine-Rich Zinc Oxoclusters as Extreme Ultraviolet Photoresists: Chemical Reactions and Lithography Performance.
Thakur N; Vockenhuber M; Ekinci Y; Watts B; Giglia A; Mahne N; Nannarone S; Castellanos S; Brouwer AM
ACS Mater Au; 2022 May; 2(3):343-355. PubMed ID: 36855383
[TBL] [Abstract][Full Text] [Related]
8. Beyond EUV lithography: a comparative study of efficient photoresists' performance.
Mojarad N; Gobrecht J; Ekinci Y
Sci Rep; 2015 Mar; 5():9235. PubMed ID: 25783209
[TBL] [Abstract][Full Text] [Related]
9. Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20-450 eV.
Fallica R; Mahne N; Conard T; Vanleenhove A; de Simone D; Nannarone S
ACS Appl Mater Interfaces; 2023 Jul; 15(29):35483-35494. PubMed ID: 37449783
[TBL] [Abstract][Full Text] [Related]
10. Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography.
Bespalov I; Zhang Y; Haitjema J; Tromp RM; van der Molen SJ; Brouwer AM; Jobst J; Castellanos S
ACS Appl Mater Interfaces; 2020 Feb; 12(8):9881-9889. PubMed ID: 32019303
[TBL] [Abstract][Full Text] [Related]
11. Mechanistic Advantages of Organotin Molecular EUV Photoresists.
Ma JH; Needham C; Wang H; Neureuther A; Prendergast D; Naulleau P
ACS Appl Mater Interfaces; 2022 Feb; 14(4):5514-5524. PubMed ID: 35073690
[TBL] [Abstract][Full Text] [Related]
12. Gas phase low energy electron induced decomposition of the focused electron beam induced deposition (FEBID) precursor trimethyl (methylcyclopentadienyl) platinum(IV) (MeCpPtMe3).
Engmann S; Stano M; Matejčík S; Ingólfsson O
Phys Chem Chem Phys; 2012 Nov; 14(42):14611-8. PubMed ID: 23032785
[TBL] [Abstract][Full Text] [Related]
13. Electron stimulated desorption from condensed benzene.
Álvarez L; Bass AD; Lozano AI; García-Abenza A; Limão-Vieira P; Sanche L; García G
Phys Chem Chem Phys; 2024 Mar; 26(12):9197-9206. PubMed ID: 38376884
[TBL] [Abstract][Full Text] [Related]
14. Reactions in condensed formic acid (HCOOH) induced by low energy (< 20 eV) electrons.
Sedlacko T; Balog R; Lafosse A; Stano M; Matejcik S; Azria R; Illenberger E
Phys Chem Chem Phys; 2005 Mar; 7(6):1277-82. PubMed ID: 19791345
[TBL] [Abstract][Full Text] [Related]
15. Fluorescent Labeling to Investigate Nanopatterning Processes in Extreme Ultraviolet Lithography.
Wu L; Hilbers MF; Lugier O; Thakur N; Vockenhuber M; Ekinci Y; Brouwer AM; Castellanos S
ACS Appl Mater Interfaces; 2021 Nov; 13(43):51790-51798. PubMed ID: 34669380
[TBL] [Abstract][Full Text] [Related]
16. Electron stimulated desorption of Cl(-) from adsorbed and condensed Cl2: effects of environment and orientation.
Tegeder P; Balog R; Mason NJ; Illenberger E
Phys Chem Chem Phys; 2005 Feb; 7(4):685-90. PubMed ID: 19787886
[TBL] [Abstract][Full Text] [Related]
17. Resistless EUV lithography: Photon-induced oxide patterning on silicon.
Tseng LT; Karadan P; Kazazis D; Constantinou PC; Stock TJZ; Curson NJ; Schofield SR; Muntwiler M; Aeppli G; Ekinci Y
Sci Adv; 2023 Apr; 9(16):eadf5997. PubMed ID: 37075116
[TBL] [Abstract][Full Text] [Related]
18. Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters.
Diulus JT; Frederick RT; Li M; Hutchison DC; Olsen MR; Lyubinetsky I; Árnadóttir L; Garfunkel EL; Nyman M; Ogasawara H; Herman GS
ACS Appl Mater Interfaces; 2019 Jan; 11(2):2526-2534. PubMed ID: 30575394
[TBL] [Abstract][Full Text] [Related]
19. Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.
Ashby PD; Olynick DL; Ogletree DF; Naulleau PP
Adv Mater; 2015 Oct; 27(38):5813-9. PubMed ID: 26079187
[TBL] [Abstract][Full Text] [Related]
20. Mechanisms of acid generation from ionic photoacid generators for extreme ultraviolet and electron beam lithography.
Fu C; Du K; Xue J; Xin H; Zhang J; Li H
Phys Chem Chem Phys; 2024 May; ():. PubMed ID: 38805008
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
