These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
164 related articles for article (PubMed ID: 33917367)
1. Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD. Du Y; Kong Z; Toprak MS; Wang G; Miao Y; Xu B; Yu J; Li B; Lin H; Han J; Dong Y; Wang W; Radamson HH Nanomaterials (Basel); 2021 Apr; 11(4):. PubMed ID: 33917367 [TBL] [Abstract][Full Text] [Related]
2. Strain Modulation of Selectively and/or Globally Grown Ge Layers. Du Y; Wang G; Miao Y; Xu B; Li B; Kong Z; Yu J; Zhao X; Lin H; Su J; Han J; Liu J; Dong Y; Wang W; Radamson HH Nanomaterials (Basel); 2021 May; 11(6):. PubMed ID: 34071167 [TBL] [Abstract][Full Text] [Related]
3. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser. Du Y; Wei W; Xu B; Wang G; Li B; Miao Y; Zhao X; Kong Z; Lin H; Yu J; Su J; Dong Y; Wang W; Ye T; Zhang J; Radamson HH Micromachines (Basel); 2022 Sep; 13(10):. PubMed ID: 36295932 [TBL] [Abstract][Full Text] [Related]
4. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Xu B; Du Y; Wang G; Xiong W; Kong Z; Zhao X; Miao Y; Wang Y; Lin H; Su J; Li B; Wu Y; Radamson HH Materials (Basel); 2022 May; 15(10):. PubMed ID: 35629618 [TBL] [Abstract][Full Text] [Related]
5. The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination. Ko KM; Seo JH; Kim DE; Lee ST; Noh YK; Kim MD; Oh JE Nanotechnology; 2009 Jun; 20(22):225201. PubMed ID: 19433876 [TBL] [Abstract][Full Text] [Related]
6. Strained Si Xie L; Zhu H; Zhang Y; Ai X; Wang G; Li J; Du A; Kong Z; Yin X; Li C; Zhao L; Li Y; Jia K; Li B; Radamson HH Nanomaterials (Basel); 2020 Aug; 10(9):. PubMed ID: 32872556 [TBL] [Abstract][Full Text] [Related]
7. Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si. Kim H; Geum DM; Ko YH; Han WS Nanoscale Res Lett; 2022 Dec; 17(1):126. PubMed ID: 36534366 [TBL] [Abstract][Full Text] [Related]
9. Dislocation sink annihilating threading dislocations in strain-relaxed Si Choi SJ; Kim IH; Park JS; Shim TH; Park JG Nanotechnology; 2020 Mar; 31(12):12LT01. PubMed ID: 31739301 [TBL] [Abstract][Full Text] [Related]
10. Influence of homo buffer layer thickness on the quality of ZnO epilayers. Eid EA; Fouda AN Spectrochim Acta A Mol Biomol Spectrosc; 2015 Oct; 149():127-31. PubMed ID: 25950638 [TBL] [Abstract][Full Text] [Related]
11. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer. Mansor M; Norhaniza R; Shuhaimi A; Hisyam MI; Omar AZ; Williams A; Mat Hussin MR Sci Rep; 2023 May; 13(1):8793. PubMed ID: 37258537 [TBL] [Abstract][Full Text] [Related]
12. Enhanced direct-gap light emission from Si-capped n Higashitarumizu N; Ishikawa Y Opt Express; 2017 Sep; 25(18):21286-21300. PubMed ID: 29041428 [TBL] [Abstract][Full Text] [Related]
13. Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots. Samavati A; Othaman Z; Dabagh S; Ghoshal SK J Nanosci Nanotechnol; 2014 Jul; 14(7):5266-71. PubMed ID: 24758014 [TBL] [Abstract][Full Text] [Related]
14. High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates. Aprojanz J; Rosenzweig P; Nguyen TTN; Karakachian H; Küster K; Starke U; Lukosius M; Lippert G; Sinterhauf A; Wenderoth M; Zakharov AA; Tegenkamp C ACS Appl Mater Interfaces; 2020 Sep; 12(38):43065-43072. PubMed ID: 32865383 [TBL] [Abstract][Full Text] [Related]
15. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates. He C; Zhao W; Zhang K; He L; Wu H; Liu N; Zhang S; Liu X; Chen Z ACS Appl Mater Interfaces; 2017 Dec; 9(49):43386-43392. PubMed ID: 29164860 [TBL] [Abstract][Full Text] [Related]
16. Effects of phosphorous and antimony doping on thin Ge layers grown on Si. Yu X; Jia H; Yang J; Masteghin MG; Beere H; Mtunzi M; Deng H; Huo S; Chen C; Chen S; Tang M; Sweeney SJ; Ritchie D; Seeds A; Liu H Sci Rep; 2024 Apr; 14(1):7969. PubMed ID: 38575676 [TBL] [Abstract][Full Text] [Related]
17. Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars. Skibitzki O; Capellini G; Yamamoto Y; Zaumseil P; Schubert MA; Schroeder T; Ballabio A; Bergamaschini R; Salvalaglio M; Miglio L; Montalenti F ACS Appl Mater Interfaces; 2016 Oct; 8(39):26374-26380. PubMed ID: 27603117 [TBL] [Abstract][Full Text] [Related]
18. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM. Gangopadhyay S; Yoshimura M; Ueda K Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880 [TBL] [Abstract][Full Text] [Related]
19. Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications. Kong Z; Wang G; Liang R; Su J; Xun M; Miao Y; Gu S; Li J; Cao K; Lin H; Li B; Ren Y; Li J; Xu J; Radamson HH Nanomaterials (Basel); 2022 Mar; 12(6):. PubMed ID: 35335793 [TBL] [Abstract][Full Text] [Related]
20. Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers. Jung JH; Yoon HS; Kim YL; Song MS; Kim Y; Chen ZG; Zou J; Choi DY; Kang JH; Joyce HJ; Gao Q; Hoe Tan H; Jagadish C Nanotechnology; 2010 Jul; 21(29):295602. PubMed ID: 20585174 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]