241 related articles for article (PubMed ID: 33922130)
1. High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation.
Min SY; Cho WJ
Nanomaterials (Basel); 2021 Apr; 11(5):. PubMed ID: 33922130
[TBL] [Abstract][Full Text] [Related]
2. Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics.
Choi HW; Song KW; Kim SH; Nguyen KT; Eadi SB; Kwon HM; Lee HD
Sci Rep; 2022 Jan; 12(1):1259. PubMed ID: 35075173
[TBL] [Abstract][Full Text] [Related]
3. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.
Hu W; Zou L; Chen X; Qin N; Li S; Bao D
ACS Appl Mater Interfaces; 2014 Apr; 6(7):5012-7. PubMed ID: 24635893
[TBL] [Abstract][Full Text] [Related]
4. Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing.
Wu CH; Kuo SN; Chang KM; Chen YM; Zhang YX; Xu N; Liu WY; Chin A
J Nanosci Nanotechnol; 2020 Jul; 20(7):4057-4060. PubMed ID: 31968420
[TBL] [Abstract][Full Text] [Related]
5. Implementation of Highly Stable Memristive Characteristics in an Organic-Inorganic Hybrid Resistive Switching Layer of Chitosan-Titanium Oxide with Microwave-Assisted Oxidation.
Lee DH; Park H; Cho WJ
Molecules; 2023 Jul; 28(13):. PubMed ID: 37446836
[TBL] [Abstract][Full Text] [Related]
6. Effect of Simplified-Single-Step Microwave Annealing in O₂ Ambient for High Performance Solution-Processed In-Ga-Zn-O Thin Film Transistors.
Cho SK; Cho WJ
J Nanosci Nanotechnol; 2020 Jul; 20(7):4163-4169. PubMed ID: 31968435
[TBL] [Abstract][Full Text] [Related]
7. Memristors Using Solution-Based IGZO Nanoparticles.
Rosa J; Kiazadeh A; Santos L; Deuermeier J; Martins R; Gomes HL; Fortunato E
ACS Omega; 2017 Nov; 2(11):8366-8372. PubMed ID: 31457375
[TBL] [Abstract][Full Text] [Related]
8. Emergent solution based IGZO memristor towards neuromorphic applications.
Martins RA; Carlos E; Deuermeier J; Pereira ME; Martins R; Fortunato E; Kiazadeh A
J Mater Chem C Mater; 2022 Feb; 10(6):1991-1998. PubMed ID: 35873858
[TBL] [Abstract][Full Text] [Related]
9. Stable and reliable IGZO resistive switching device with HfAlO
Peng H; Liu H; Ma X; Cheng X
Nanotechnology; 2023 Jun; 34(36):. PubMed ID: 37192603
[TBL] [Abstract][Full Text] [Related]
10. Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates.
Park KW; Cho WJ
Materials (Basel); 2021 May; 14(10):. PubMed ID: 34069832
[TBL] [Abstract][Full Text] [Related]
11. Composition-ratio influence on resistive switching behavior of solution-processed InGaZnO-based thin-film.
Hwang YH; Hwang I; Cho WJ
J Nanosci Nanotechnol; 2014 Nov; 14(11):8196-200. PubMed ID: 25958499
[TBL] [Abstract][Full Text] [Related]
12. Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer.
Wu CH; Kuo SN; Chang KM; Chen YM; Zhang YX; Xu N; Liu WY; Chin A
J Nanosci Nanotechnol; 2020 Jul; 20(7):4244-4247. PubMed ID: 31968450
[TBL] [Abstract][Full Text] [Related]
13. Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-
Cho SK; Cho WJ
Nanomaterials (Basel); 2020 Sep; 10(9):. PubMed ID: 32927757
[TBL] [Abstract][Full Text] [Related]
14. Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors.
Min SY; Cho WJ
Int J Mol Sci; 2021 Mar; 22(7):. PubMed ID: 33806206
[TBL] [Abstract][Full Text] [Related]
15. Sprayed FeWO
Patil AR; Dongale TD; Namade LD; Mohite SV; Kim Y; Sutar SS; Kamat RK; Rajpure KY
J Colloid Interface Sci; 2023 Jul; 642():540-553. PubMed ID: 37028161
[TBL] [Abstract][Full Text] [Related]
16. Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO
Kim D; Lee HJ; Yang TJ; Choi WS; Kim C; Choi SJ; Bae JH; Kim DM; Kim S; Kim DH
Nanomaterials (Basel); 2022 Oct; 12(20):. PubMed ID: 36296772
[TBL] [Abstract][Full Text] [Related]
17. Improved analog switching characteristics of Ta
Lee TS; Choi C
Nanotechnology; 2022 Mar; 33(24):. PubMed ID: 35226891
[TBL] [Abstract][Full Text] [Related]
18. Microwave-assisted calcination of electrospun indium-gallium-zinc oxide nanofibers for high-performance field-effect transistors.
Cho SK; Cho WJ
RSC Adv; 2020 Oct; 10(63):38351-38356. PubMed ID: 35517543
[TBL] [Abstract][Full Text] [Related]
19. Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy.
Lee D; Chun MC; Ko H; Kang BS; Kim J
Nanotechnology; 2020 Mar; 31(24):245202. PubMed ID: 32155592
[TBL] [Abstract][Full Text] [Related]
20. Improvements in Resistive and Capacitive Switching Behaviors in Ga
Lee HJ; Kim JH; Kim HJ; Lee SN
Materials (Basel); 2024 Jun; 17(11):. PubMed ID: 38893991
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]