204 related articles for article (PubMed ID: 33923705)
1. High-Performance CVD Bilayer MoS
Gao Q; Zhang C; Yang K; Pan X; Zhang Z; Yang J; Yi Z; Chi F; Liu L
Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33923705
[TBL] [Abstract][Full Text] [Related]
2. Scalable high performance radio frequency electronics based on large domain bilayer MoS
Gao Q; Zhang Z; Xu X; Song J; Li X; Wu Y
Nat Commun; 2018 Nov; 9(1):4778. PubMed ID: 30429471
[TBL] [Abstract][Full Text] [Related]
3. Radio Frequency Transistors and Circuits Based on CVD MoS2.
Sanne A; Ghosh R; Rai A; Yogeesh MN; Shin SH; Sharma A; Jarvis K; Mathew L; Rao R; Akinwande D; Banerjee S
Nano Lett; 2015 Aug; 15(8):5039-45. PubMed ID: 26134588
[TBL] [Abstract][Full Text] [Related]
4. Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS
Gao Q; Zhang C; Liu P; Hu Y; Yang K; Yi Z; Liu L; Pan X; Zhang Z; Yang J; Chi F
Nanomaterials (Basel); 2021 Jun; 11(6):. PubMed ID: 34204492
[TBL] [Abstract][Full Text] [Related]
5. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.
Cheng R; Jiang S; Chen Y; Liu Y; Weiss N; Cheng HC; Wu H; Huang Y; Duan X
Nat Commun; 2014 Oct; 5():5143. PubMed ID: 25295573
[TBL] [Abstract][Full Text] [Related]
6. Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
Chang HY; Yogeesh MN; Ghosh R; Rai A; Sanne A; Yang S; Lu N; Banerjee SK; Akinwande D
Adv Mater; 2016 Mar; 28(9):1818-23. PubMed ID: 26707841
[TBL] [Abstract][Full Text] [Related]
7. Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.
Cao Y; Brady GJ; Gui H; Rutherglen C; Arnold MS; Zhou C
ACS Nano; 2016 Jul; 10(7):6782-90. PubMed ID: 27327074
[TBL] [Abstract][Full Text] [Related]
8. Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies.
Zhu W; Park S; Yogeesh MN; McNicholas KM; Bank SR; Akinwande D
Nano Lett; 2016 Apr; 16(4):2301-6. PubMed ID: 26977902
[TBL] [Abstract][Full Text] [Related]
9. 200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.
Wu Y; Zou X; Sun M; Cao Z; Wang X; Huo S; Zhou J; Yang Y; Yu X; Kong Y; Yu G; Liao L; Chen T
ACS Appl Mater Interfaces; 2016 Oct; 8(39):25645-25649. PubMed ID: 27640732
[TBL] [Abstract][Full Text] [Related]
10. Black phosphorus radio-frequency transistors.
Wang H; Wang X; Xia F; Wang L; Jiang H; Xia Q; Chin ML; Dubey M; Han SJ
Nano Lett; 2014 Nov; 14(11):6424-9. PubMed ID: 25347787
[TBL] [Abstract][Full Text] [Related]
11. Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.
Zhong D; Shi H; Ding L; Zhao C; Liu J; Zhou J; Zhang Z; Peng LM
ACS Appl Mater Interfaces; 2019 Nov; 11(45):42496-42503. PubMed ID: 31618003
[TBL] [Abstract][Full Text] [Related]
12. Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates.
Petrone N; Meric I; Hone J; Shepard KL
Nano Lett; 2013 Jan; 13(1):121-5. PubMed ID: 23256606
[TBL] [Abstract][Full Text] [Related]
13. T-gate aligned nanotube radio frequency transistors and circuits with superior performance.
Che Y; Lin YC; Kim P; Zhou C
ACS Nano; 2013 May; 7(5):4343-50. PubMed ID: 23590623
[TBL] [Abstract][Full Text] [Related]
14. Fast Flexible Transistors with a Nanotrench Structure.
Seo JH; Ling T; Gong S; Zhou W; Ma AL; Guo LJ; Ma Z
Sci Rep; 2016 Apr; 6():24771. PubMed ID: 27094686
[TBL] [Abstract][Full Text] [Related]
15. Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates.
Wei W; Pallecchi E; Haque S; Borini S; Avramovic V; Centeno A; Amaia Z; Happy H
Nanoscale; 2016 Aug; 8(29):14097-103. PubMed ID: 27396243
[TBL] [Abstract][Full Text] [Related]
16. Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene.
Yeh CH; Teng PY; Chiu YC; Hsiao WT; Hsu SSH; Chiu PW
ACS Appl Mater Interfaces; 2019 Feb; 11(6):6336-6343. PubMed ID: 30652465
[TBL] [Abstract][Full Text] [Related]
17. Zero-Bias Power-Detector Circuits based on MoS
Reato E; Palacios P; Uzlu B; Saeed M; Grundmann A; Wang Z; Schneider DS; Wang Z; Heuken M; Kalisch H; Vescan A; Radenovic A; Kis A; Neumaier D; Negra R; Lemme MC
Adv Mater; 2022 Dec; 34(48):e2108469. PubMed ID: 35075681
[TBL] [Abstract][Full Text] [Related]
18. Ku-Band Mixers Based on Random-Oriented Carbon Nanotube Films.
Chang M; Qian J; Li Z; Cheng X; Wang Y; Fan L; Cao J; Ding L
Nanomaterials (Basel); 2024 Feb; 14(5):. PubMed ID: 38470780
[TBL] [Abstract][Full Text] [Related]
19. Gigahertz flexible graphene transistors for microwave integrated circuits.
Yeh CH; Lain YW; Chiu YC; Liao CH; Moyano DR; Hsu SS; Chiu PW
ACS Nano; 2014 Aug; 8(8):7663-70. PubMed ID: 25062282
[TBL] [Abstract][Full Text] [Related]
20. MoS2 transistors operating at gigahertz frequencies.
Krasnozhon D; Lembke D; Nyffeler C; Leblebici Y; Kis A
Nano Lett; 2014 Oct; 14(10):5905-11. PubMed ID: 25243885
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]