These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

288 related articles for article (PubMed ID: 33924185)

  • 1. Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme.
    Ma CT; Gu ZH
    Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33924185
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.
    Ma CT; Gu ZH
    Micromachines (Basel); 2021 Jan; 12(1):. PubMed ID: 33430093
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Design and Implementation of an Integrated Control Scheme for GaN-Based Multiple Power Converters.
    Ma CT; Yao BH
    Micromachines (Basel); 2023 Apr; 14(4):. PubMed ID: 37421066
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Design and Implementation of a GaN-Based Three-Phase Active Power Filter.
    Ma CT; Gu ZH
    Micromachines (Basel); 2020 Jan; 11(2):. PubMed ID: 31991646
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review.
    Zhan T; Xu M; Cao Z; Zheng C; Kurita H; Narita F; Wu YJ; Xu Y; Wang H; Song M; Wang W; Zhou Y; Liu X; Shi Y; Jia Y; Guan S; Hanajiri T; Maekawa T; Okino A; Watanabe T
    Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004933
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
    Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Impact of Gamma Radiation on Dynamic R
    Martínez PJ; Maset E; Martín-Holgado P; Morilla Y; Gilabert D; Sanchis-Kilders E
    Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31466249
    [TBL] [Abstract][Full Text] [Related]  

  • 8. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
    Roccaforte F; Greco G; Fiorenza P; Iucolano F
    Materials (Basel); 2019 May; 12(10):. PubMed ID: 31096689
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Design and Implementation of a SiC-Based Multifunctional Back-to-Back Three-Phase Inverter for Advanced Microgrid Operation.
    Ma CT; Zheng ZY
    Micromachines (Basel); 2023 Jan; 14(1):. PubMed ID: 36677195
    [TBL] [Abstract][Full Text] [Related]  

  • 10. GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors.
    Jha J; Ganguly S; Saha D
    Nanotechnology; 2021 May; 32(31):. PubMed ID: 33902018
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.
    Bagnall KR; Moore EA; Badescu SC; Zhang L; Wang EN
    Rev Sci Instrum; 2017 Nov; 88(11):113111. PubMed ID: 29195348
    [TBL] [Abstract][Full Text] [Related]  

  • 12. An intelligent Hybrid Wind-PV farm as a static compensator for overall stability and control of multimachine power system.
    Kumar R; Diwania S; Singh R; Ashfaq H; Khetrapal P; Singh S
    ISA Trans; 2022 Apr; 123():286-302. PubMed ID: 34020788
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
    Haziq M; Falina S; Manaf AA; Kawarada H; Syamsul M
    Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557432
    [TBL] [Abstract][Full Text] [Related]  

  • 14. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
    Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
    Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices.
    Huang H; Li F; Sun Z; Cao Y
    Micromachines (Basel); 2018 Dec; 9(12):. PubMed ID: 30558127
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices.
    Calzolaro A; Mikolajick T; Wachowiak A
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160737
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Diamond/GaN HEMTs: Where from and Where to?
    Mendes JC; Liehr M; Li C
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057131
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Adaptive PI controller to voltage regulation in power systems: STATCOM as a case study.
    Tavana MR; Khooban MH; Niknam T
    ISA Trans; 2017 Jan; 66():325-334. PubMed ID: 27894702
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review.
    Zou X; Yang J; Qiao Q; Zou X; Chen J; Shi Y; Ren K
    Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004901
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration.
    Hsu LH; Lai YY; Tu PT; Langpoklakpam C; Chang YT; Huang YW; Lee WC; Tzou AJ; Cheng YJ; Lin CH; Kuo HC; Chang EY
    Micromachines (Basel); 2021 Sep; 12(10):. PubMed ID: 34683210
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 15.