These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

134 related articles for article (PubMed ID: 33925320)

  • 1. Structural Characterization of Al
    Núñez-Cascajero A; Naranjo FB; de la Mata M; Molina SI
    Materials (Basel); 2021 Apr; 14(9):. PubMed ID: 33925320
    [TBL] [Abstract][Full Text] [Related]  

  • 2. The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111).
    Wang W; Chen C; Zhang G; Wang T; Wu H; Liu Y; Liu C
    Nanoscale Res Lett; 2015; 10():91. PubMed ID: 25852387
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.
    Musolino M; Tahraoui A; Fernández-Garrido S; Brandt O; Trampert A; Geelhaar L; Riechert H
    Nanotechnology; 2015 Feb; 26(8):085605. PubMed ID: 25656795
    [TBL] [Abstract][Full Text] [Related]  

  • 4. The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering.
    Galvão N; Guerino M; Campos T; Grigorov K; Fraga M; Rodrigues B; Pessoa R; Camus J; Djouadi M; Maciel H
    Micromachines (Basel); 2019 Mar; 10(3):. PubMed ID: 30909406
    [TBL] [Abstract][Full Text] [Related]  

  • 5. High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga
    Gao C; Wang Y; Fu S; Xia D; Han Y; Ma J; Xu H; Li B; Shen A; Liu Y
    ACS Appl Mater Interfaces; 2023 Aug; 15(32):38612-38622. PubMed ID: 37531140
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Integrating AlN with GdN Thin Films in an in Situ CVD Process: Influence on the Oxidation and Crystallinity of GdN.
    Cwik S; Beer SMJ; Hoffmann S; Krasnopolski M; Rogalla D; Becker HW; Peeters D; Ney A; Devi A
    ACS Appl Mater Interfaces; 2017 Aug; 9(32):27036-27044. PubMed ID: 28782941
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si.
    Bolshakov AD; Fedorov VV; Shugurov KY; Mozharov AM; Sapunov GA; Shtrom IV; Mukhin MS; Uvarov AV; Cirlin GE; Mukhin IS
    Nanotechnology; 2019 Sep; 30(39):395602. PubMed ID: 31234150
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Structural and optical properties of self-assembled AlN nanowires grown on SiO
    Gačević Ž; Grandal J; Guo Q; Kirste R; Varela M; Sitar Z; Sánchez García MA
    Nanotechnology; 2021 May; 32(19):195601. PubMed ID: 33535196
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition.
    Wang W; Yang W; Liu Z; Wang H; Wen L; Li G
    Sci Rep; 2015 Jun; 5():11480. PubMed ID: 26089026
    [TBL] [Abstract][Full Text] [Related]  

  • 10. III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers.
    Pingen K; Wolff N; Mohammadian Z; Sandström P; Beuer S; von Hauff E; Kienle L; Hultman L; Birch J; Hsiao CL; Hinz AM
    ACS Appl Mater Interfaces; 2024 Jul; 16(26):34294-34302. PubMed ID: 38886009
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
    Lee HP; Perozek J; Rosario LD; Bayram C
    Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
    [TBL] [Abstract][Full Text] [Related]  

  • 12. CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer.
    Yang Z; Wei X; Roy P; Zhang D; Lu P; Dhole S; Wang H; Cucciniello N; Patibandla N; Chen Z; Zeng H; Jia Q; Zhu M
    Materials (Basel); 2023 Nov; 16(23):. PubMed ID: 38068212
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies.
    Liliental-Weber Z; Zakharov DN; Yu KM; Ager JW; Walukiewicz W; Haller EE; Lu H; Schaff WJ
    J Electron Microsc (Tokyo); 2005 Jun; 54(3):243-50. PubMed ID: 16123056
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH
    Kim SJ; Oh S; Lee KJ; Kim S; Kim KK
    Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33916339
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-k Hf-based layers grown by RF magnetron sputtering.
    Khomenkova L; Dufour C; Coulon PE; Bonafos C; Gourbilleau F
    Nanotechnology; 2010 Mar; 21(9):095704. PubMed ID: 20124661
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Comparison of the Material Quality of Al
    Sun M; Blasco R; Nwodo J; de la Mata M; Molina SI; Ajay A; Monroy E; Valdueza-Felip S; Naranjo FB
    Materials (Basel); 2022 Oct; 15(20):. PubMed ID: 36295439
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN.
    Zaiter A; Michon A; Nemoz M; Courville A; Vennéguès P; Ottapilakkal V; Vuong P; Sundaram S; Ougazzaden A; Brault J
    Materials (Basel); 2022 Dec; 15(23):. PubMed ID: 36500097
    [TBL] [Abstract][Full Text] [Related]  

  • 18. PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity.
    Liu S; Peng M; Hou C; He Y; Li M; Zheng X
    Nanoscale Res Lett; 2017 Dec; 12(1):279. PubMed ID: 28423865
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.
    Zhao G; Wang L; Yang S; Li H; Wei H; Han D; Wang Z
    Sci Rep; 2016 Feb; 6():20787. PubMed ID: 26861595
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
    Tajalli A; Borga M; Meneghini M; De Santi C; Benazzi D; Besendörfer S; Püsche R; Derluyn J; Degroote S; Germain M; Kabouche R; Abid I; Meissner E; Zanoni E; Medjdoub F; Meneghesso G
    Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31963553
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.