These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
131 related articles for article (PubMed ID: 33970616)
1. A Bi-Anti-Ambipolar Field Effect Transistor. Paul Inbaraj CR; Mathew RJ; Ulaganathan RK; Sankar R; Kataria M; Lin HY; Chen YT; Hofmann M; Lee CH; Chen YF ACS Nano; 2021 May; 15(5):8686-8693. PubMed ID: 33970616 [TBL] [Abstract][Full Text] [Related]
2. MoS He X; Chow W; Liu F; Tay B; Liu Z Small; 2017 Jan; 13(2):. PubMed ID: 27762499 [TBL] [Abstract][Full Text] [Related]
3. Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe Wu E; Xie Y; Liu Q; Hu X; Liu J; Zhang D; Zhou C ACS Nano; 2019 May; 13(5):5430-5438. PubMed ID: 30974935 [TBL] [Abstract][Full Text] [Related]
4. Anti-Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices. Cheng R; Yin L; Wang F; Wang Z; Wang J; Wen Y; Huang W; Sendeku MG; Feng L; Liu Y; He J Adv Mater; 2019 Jun; 31(24):e1901144. PubMed ID: 30998266 [TBL] [Abstract][Full Text] [Related]
5. Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications. Lee M; Kim TW; Park CY; Lee K; Taniguchi T; Watanabe K; Kim MG; Hwang DK; Lee YT Nanomicro Lett; 2022 Dec; 15(1):22. PubMed ID: 36580180 [TBL] [Abstract][Full Text] [Related]
6. Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics. Zhao Y; Chi M; Liu J; Zhai J Discov Nano; 2023 Jun; 18(1):83. PubMed ID: 37382739 [TBL] [Abstract][Full Text] [Related]
7. Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction. Han H; Zhang B; Zhang Z; Wang Y; Liu C; Singh AK; Song A; Li Y; Jin J; Zhang J Nano Lett; 2024 Jul; 24(28):8602-8608. PubMed ID: 38954477 [TBL] [Abstract][Full Text] [Related]
8. Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides. Li Y; Wang Y; Huang L; Wang X; Li X; Deng HX; Wei Z; Li J ACS Appl Mater Interfaces; 2016 Jun; 8(24):15574-81. PubMed ID: 27258569 [TBL] [Abstract][Full Text] [Related]
9. Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS Wang W; Wang W; Meng Y; Quan Q; Lai Z; Li D; Xie P; Yip S; Kang X; Bu X; Chen D; Liu C; Ho JC ACS Nano; 2022 Jul; 16(7):11036-11048. PubMed ID: 35758898 [TBL] [Abstract][Full Text] [Related]
10. Reversible charge-polarity control for a photo-triggered anti-ambipolar In Huang S; Chen H; Wang S; Chen Y; He J; Wang W; Pan Y; Zhao Y; Qi L; Su S Nanoscale; 2023 Jun; 15(24):10223-10231. PubMed ID: 37272869 [TBL] [Abstract][Full Text] [Related]
11. Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits. Shim J; Jang SW; Lim JH; Kim H; Kang DH; Kim KH; Seo S; Heo K; Shin C; Yu HY; Lee S; Ko DH; Park JH Nanoscale; 2019 Jul; 11(27):12871-12877. PubMed ID: 31243409 [TBL] [Abstract][Full Text] [Related]
12. Nonvolatile van der Waals Heterostructure Phototransistor for Encrypted Optoelectronic Logic Circuit. Wang S; Pan X; Lyu L; Wang CY; Wang P; Pan C; Yang Y; Wang C; Shi J; Cheng B; Yu W; Liang SJ; Miao F ACS Nano; 2022 Mar; 16(3):4528-4535. PubMed ID: 35167274 [TBL] [Abstract][Full Text] [Related]
13. Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits. Yoo H; On S; Lee SB; Cho K; Kim JJ Adv Mater; 2019 Jul; 31(29):e1808265. PubMed ID: 31116897 [TBL] [Abstract][Full Text] [Related]
14. Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials. Shim J; Jo SH; Kim M; Song YJ; Kim J; Park JH ACS Nano; 2017 Jun; 11(6):6319-6327. PubMed ID: 28609089 [TBL] [Abstract][Full Text] [Related]
15. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator. Zhu W; Yogeesh MN; Yang S; Aldave SH; Kim JS; Sonde S; Tao L; Lu N; Akinwande D Nano Lett; 2015 Mar; 15(3):1883-90. PubMed ID: 25715122 [TBL] [Abstract][Full Text] [Related]
16. A tunable floating-base bipolar transistor based on a 2D material homojunction realized using a solid ionic dielectric material. Li J; Chen X; Xiao Y; Li S; Zhang G; Diao X; Yan H; Zhang Y Nanoscale; 2019 Nov; 11(46):22531-22538. PubMed ID: 31746898 [TBL] [Abstract][Full Text] [Related]
17. High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS Shin GH; Lee GB; An ES; Park C; Jin HJ; Lee KJ; Oh DS; Kim JS; Choi YK; Choi SY ACS Appl Mater Interfaces; 2020 Jan; 12(4):5106-5112. PubMed ID: 31898448 [TBL] [Abstract][Full Text] [Related]
18. Ambipolar Barristors for Reconfigurable Logic Circuits. Liu Y; Zhang G; Zhou H; Li Z; Cheng R; Xu Y; Gambin V; Huang Y; Duan X Nano Lett; 2017 Mar; 17(3):1448-1454. PubMed ID: 28165746 [TBL] [Abstract][Full Text] [Related]
19. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. Meng Y; Wang W; Wang W; Li B; Zhang Y; Ho J Adv Mater; 2024 Apr; 36(17):e2306290. PubMed ID: 37580311 [TBL] [Abstract][Full Text] [Related]
20. Gate tunable WSe2-BP van der Waals heterojunction devices. Chen P; Zhang TT; zhang J; Xiang J; Yu H; Wu S; Lu X; Wang G; Wen F; Liu Z; Yang R; Shi D; Zhang G Nanoscale; 2016 Feb; 8(6):3254-8. PubMed ID: 26810387 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]