These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

138 related articles for article (PubMed ID: 34008608)

  • 1. Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting.
    Bergamaschini R; Plantenga RC; Albani M; Scalise E; Ren Y; Hauge HIT; Kölling S; Montalenti F; Bakkers EPAM; Verheijen MA; Miglio L
    Nanoscale; 2021 May; 13(20):9436-9445. PubMed ID: 34008608
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry.
    Naffouti M; David T; Benkouider A; Favre L; Cabie M; Ronda A; Berbezier I; Abbarchi M
    Nanotechnology; 2016 Jul; 27(30):305602. PubMed ID: 27302611
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires.
    Assali S; Bergamaschini R; Scalise E; Verheijen MA; Albani M; Dijkstra A; Li A; Koelling S; Bakkers EPAM; Montalenti F; Miglio L
    ACS Nano; 2020 Feb; 14(2):2445-2455. PubMed ID: 31972083
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Efficient electron and hole doping in compositionally abrupt Si/Ge nanowires.
    Li P; Zhou R; Pan B; Zeng XC
    Nanoscale; 2013 May; 5(9):3880-8. PubMed ID: 23525137
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Inhibiting strain-induced surface roughening: dislocation-free Ge/Si and Ge/SiGe core-shell nanowires.
    Goldthorpe IA; Marshall AF; McIntyre PC
    Nano Lett; 2009 Nov; 9(11):3715-9. PubMed ID: 19795838
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core-Shell Nanowires As Revealed by in situ Transmission Electron Microscopy.
    Zhang C; Kvashnin DG; Bourgeois L; Fernando JFS; Firestein K; Sorokin PB; Fukata N; Golberg D
    Nano Lett; 2018 Nov; 18(11):7238-7246. PubMed ID: 30346785
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Tailoring Strain and Morphology of Core-Shell SiGe Nanowires by Low-Temperature Ge Condensation.
    David T; Liu K; Ronda A; Favre L; Abbarchi M; Gailhanou M; Gentile P; Buttard D; Calvo V; Amato M; Aqua JN; Berbezier I
    Nano Lett; 2017 Dec; 17(12):7299-7305. PubMed ID: 29116815
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Theoretical studies of the passivants' effect on the Si(x)Ge(1-x) nanowires: composition profiles, diameter, shape, and electronic properties.
    Yang XB; Zhao YJ; Xu H
    J Chem Phys; 2013 Oct; 139(15):154713. PubMed ID: 24160539
    [TBL] [Abstract][Full Text] [Related]  

  • 9. The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.
    Wu J; Wieligor M; Zerda TW; Coffer JL
    Nanoscale; 2010 Dec; 2(12):2657-67. PubMed ID: 20931125
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires.
    Turner EM; Campbell Q; Pizarro J; Yang H; Sapkota KR; Lu P; Baczewski AD; Wang GT; Jones KS
    Nano Lett; 2021 Oct; 21(19):7905-7912. PubMed ID: 34582219
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001).
    Wang JH; Wang T; Zhang JJ
    Nanomaterials (Basel); 2021 Mar; 11(3):. PubMed ID: 33808713
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells.
    Zhao Y; Smith JT; Appenzeller J; Yang C
    Nano Lett; 2011 Apr; 11(4):1406-11. PubMed ID: 21417251
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Lateral Ge Diffusion During Oxidation of Si/SiGe Fins.
    Brewer WM; Xin Y; Hatem C; Diercks D; Truong VQ; Jones KS
    Nano Lett; 2017 Apr; 17(4):2159-2164. PubMed ID: 28249115
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Raman microscopy and infrared optical properties of SiGe Mie resonators formed on SiO
    Poborchii V; Bouabdellaoui M; Uchida N; Ronda A; Berbezier I; David T; Ruiz CM; Zazoui M; Sena RP; Abbarchi M; Favre L
    Nanotechnology; 2020 May; 31(19):195602. PubMed ID: 31931487
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires.
    Zhang L; d'Avezac M; Luo JW; Zunger A
    Nano Lett; 2012 Feb; 12(2):984-91. PubMed ID: 22216831
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires.
    Nguyen BM; Swartzentruber B; Ro YG; Dayeh SA
    Nano Lett; 2015 Nov; 15(11):7258-64. PubMed ID: 26447652
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).
    Shklyaev AA; Latyshev AV
    Nanoscale Res Lett; 2016 Dec; 11(1):366. PubMed ID: 27541814
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins.
    Thornton CS; Tuttle B; Turner E; Law ME; Pantelides ST; Wang GT; Jones KS
    ACS Appl Mater Interfaces; 2022 Jun; 14(25):29422-29430. PubMed ID: 35706336
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductors.
    d'Avezac M; Luo JW; Chanier T; Zunger A
    Phys Rev Lett; 2012 Jan; 108(2):027401. PubMed ID: 22324706
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.
    Kim Y; Yokoyama M; Taoka N; Takenaka M; Takagi S
    Opt Express; 2013 Aug; 21(17):19615-23. PubMed ID: 24105508
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.