192 related articles for article (PubMed ID: 34057254)
1. Chemical Synthesis and Integration of Highly Conductive PdTe
Zheng J; Miao T; Xu R; Ping X; Wu Y; Lu Z; Zhang Z; Hu D; Liu L; Zhang Q; Li D; Cheng Z; Ma W; Xie L; Jiao L
Adv Mater; 2021 Jul; 33(27):e2101150. PubMed ID: 34057254
[TBL] [Abstract][Full Text] [Related]
2. Electrochemical Construction of Edge-Contacted Metal-Semiconductor Junctions with Low Contact Barrier.
Ping X; Liu W; Wu Y; Xu G; Chen F; Li G; Jiao L
Adv Mater; 2022 Aug; 34(31):e2202484. PubMed ID: 35642101
[TBL] [Abstract][Full Text] [Related]
3. Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe
Yang Z; Peng X; Wang J; Lin J; Zhang C; Tang B; Zhang J; Yang W
ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38676636
[TBL] [Abstract][Full Text] [Related]
4. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors.
Wang Y; Kim JC; Wu RJ; Martinez J; Song X; Yang J; Zhao F; Mkhoyan A; Jeong HY; Chhowalla M
Nature; 2019 Apr; 568(7750):70-74. PubMed ID: 30918403
[TBL] [Abstract][Full Text] [Related]
5. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe
Saidov K; Razzokov J; Parpiev O; Yüzbasi NS; Kovalska N; Blugan G; Ruzimuradov O
Nanomaterials (Basel); 2023 Sep; 13(18):. PubMed ID: 37764588
[TBL] [Abstract][Full Text] [Related]
6. Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly.
Xu X; Liu S; Han B; Han Y; Yuan K; Xu W; Yao X; Li P; Yang S; Gong W; Muller DA; Gao P; Ye Y; Dai L
Nano Lett; 2019 Oct; 19(10):6845-6852. PubMed ID: 31478675
[TBL] [Abstract][Full Text] [Related]
7. Controlling Polarity of MoTe
Liu X; Islam A; Guo J; Feng PX
ACS Nano; 2020 Feb; 14(2):1457-1467. PubMed ID: 31909988
[TBL] [Abstract][Full Text] [Related]
8. P/N-Type Conversion of 2D MoTe
Cheng Z; Jia X; Han B; Li M; Xu W; Li Y; Gao P; Dai L
ACS Appl Mater Interfaces; 2024 Jul; ():. PubMed ID: 38973165
[TBL] [Abstract][Full Text] [Related]
9. A "Click" Reaction to Engineer MoS
Miao J; Wu L; Bian Z; Zhu Q; Zhang T; Pan X; Hu J; Xu W; Wang Y; Xu Y; Yu B; Ji W; Zhang X; Qiao J; Samorì P; Zhao Y
ACS Nano; 2022 Dec; 16(12):20647-20655. PubMed ID: 36455073
[TBL] [Abstract][Full Text] [Related]
10. Lowering Contact Resistances of Two-Dimensional Semiconductors by Memristive Forming.
Wu Z; Zhu Y; Wang F; Ding C; Wang Y; Zhan X; He J; Wang Z
Nano Lett; 2022 Sep; 22(17):7094-7103. PubMed ID: 36053055
[TBL] [Abstract][Full Text] [Related]
11. Atomic Layer MoTe
Liu X; Islam A; Yang N; Odhner B; Tupta MA; Guo J; Feng PX
ACS Nano; 2021 Dec; 15(12):19733-19742. PubMed ID: 34913336
[TBL] [Abstract][Full Text] [Related]
12. Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials.
Miao J; Zhang X; Tian Y; Zhao Y
Nanomaterials (Basel); 2022 Oct; 12(21):. PubMed ID: 36364620
[TBL] [Abstract][Full Text] [Related]
13. Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials.
Bark H; Choi Y; Jung J; Kim JH; Kwon H; Lee J; Lee Z; Cho JH; Lee C
Nanoscale; 2018 Jan; 10(3):1056-1062. PubMed ID: 29266157
[TBL] [Abstract][Full Text] [Related]
14. Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors.
Wang Q; Jiang S; Qian J; Song L; Zhang L; Zhang Y; Zhang Y; Wang Y; Wang X; Shi Y; Zheng Y; Li Y
Sci Rep; 2017 Aug; 7(1):7830. PubMed ID: 28798302
[TBL] [Abstract][Full Text] [Related]
15. MoTe
Bae GY; Kim J; Kim J; Lee S; Lee E
Nanomaterials (Basel); 2021 Oct; 11(11):. PubMed ID: 34835570
[TBL] [Abstract][Full Text] [Related]
16. Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus.
Ryder CR; Wood JD; Wells SA; Hersam MC
ACS Nano; 2016 Apr; 10(4):3900-17. PubMed ID: 27018800
[TBL] [Abstract][Full Text] [Related]
17. One-dimensional semimetal contacts to two-dimensional semiconductors.
Li X; Wei Y; Wang Z; Kong Y; Su Y; Lu G; Mei Z; Su Y; Zhang G; Xiao J; Liang L; Li J; Li Q; Zhang J; Fan S; Zhang Y
Nat Commun; 2023 Jan; 14(1):111. PubMed ID: 36611034
[TBL] [Abstract][Full Text] [Related]
18. Enhanced carrier transport by transition metal doping in WS
Liu M; Wei S; Shahi S; Jaiswal HN; Paletti P; Fathipour S; Remškar M; Jiao J; Hwang W; Yao F; Li H
Nanoscale; 2020 Sep; 12(33):17253-17264. PubMed ID: 32329484
[TBL] [Abstract][Full Text] [Related]
19. Clean BN-Encapsulated 2D FETs with Lithography-Compatible Contacts.
Liang B; Wang A; Zhou J; Ju S; Chen J; Watanabe K; Taniguchi T; Shi Y; Li S
ACS Appl Mater Interfaces; 2022 Apr; 14(16):18697-18703. PubMed ID: 35436083
[TBL] [Abstract][Full Text] [Related]
20. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS
Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH
Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]