178 related articles for article (PubMed ID: 34065014)
1. On the Thermal Models for Resistive Random Access Memory Circuit Simulation.
Roldán JB; González-Cordero G; Picos R; Miranda E; Palumbo F; Jiménez-Molinos F; Moreno E; Maldonado D; Baldomá SB; Moner Al Chawa M; de Benito C; Stavrinides SG; Suñé J; Chua LO
Nanomaterials (Basel); 2021 May; 11(5):. PubMed ID: 34065014
[TBL] [Abstract][Full Text] [Related]
2. Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories.
Aguilera-Pedregosa C; Maldonado D; González MB; Moreno E; Jiménez-Molinos F; Campabadal F; Roldán JB
Micromachines (Basel); 2023 Mar; 14(3):. PubMed ID: 36985037
[TBL] [Abstract][Full Text] [Related]
3. Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications.
Ielmini D; Milo V
J Comput Electron; 2017; 16(4):1121-1143. PubMed ID: 31997981
[TBL] [Abstract][Full Text] [Related]
4. Conductance Quantization in Resistive Random Access Memory.
Li Y; Long S; Liu Y; Hu C; Teng J; Liu Q; Lv H; Suñé J; Liu M
Nanoscale Res Lett; 2015 Dec; 10(1):420. PubMed ID: 26501832
[TBL] [Abstract][Full Text] [Related]
5. Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices.
Bature UI; Nawi IM; Khir MHM; Zahoor F; Algamili AS; Hashwan SSB; Zakariya MA
Materials (Basel); 2022 Feb; 15(3):. PubMed ID: 35161148
[TBL] [Abstract][Full Text] [Related]
6. Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO
Swoboda T; Gao X; Rosário CMM; Hui F; Zhu K; Yuan Y; Deshmukh S; Köroǧlu Ç; Pop E; Lanza M; Hilgenkamp H; Rojo MM
ACS Appl Electron Mater; 2023 Sep; 5(9):5025-5031. PubMed ID: 37779889
[TBL] [Abstract][Full Text] [Related]
7. Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations.
Udaya Mohanan K
Nanomaterials (Basel); 2024 Mar; 14(6):. PubMed ID: 38535676
[TBL] [Abstract][Full Text] [Related]
8. Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching.
Li Y; Fuller EJ; Sugar JD; Yoo S; Ashby DS; Bennett CH; Horton RD; Bartsch MS; Marinella MJ; Lu WD; Talin AA
Adv Mater; 2020 Nov; 32(45):e2003984. PubMed ID: 32964602
[TBL] [Abstract][Full Text] [Related]
9. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.
Zahoor F; Hussin FA; Isyaku UB; Gupta S; Khanday FA; Chattopadhyay A; Abbas H
Discov Nano; 2023 Mar; 18(1):36. PubMed ID: 37382679
[TBL] [Abstract][Full Text] [Related]
10. Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices.
Dirkmann S; Kaiser J; Wenger C; Mussenbrock T
ACS Appl Mater Interfaces; 2018 May; 10(17):14857-14868. PubMed ID: 29601180
[TBL] [Abstract][Full Text] [Related]
11. Investigation of resistance switching in SiO
Sadi T; Mehonic A; Montesi L; Buckwell M; Kenyon A; Asenov A
J Phys Condens Matter; 2018 Feb; 30(8):084005. PubMed ID: 29334362
[TBL] [Abstract][Full Text] [Related]
12. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM.
Lee J; Schell W; Zhu X; Kioupakis E; Lu WD
ACS Appl Mater Interfaces; 2019 Mar; 11(12):11579-11586. PubMed ID: 30816044
[TBL] [Abstract][Full Text] [Related]
13. Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.
Zahoor F; Azni Zulkifli TZ; Khanday FA
Nanoscale Res Lett; 2020 Apr; 15(1):90. PubMed ID: 32323059
[TBL] [Abstract][Full Text] [Related]
14. Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.
Kim S; Kim SJ; Kim KM; Lee SR; Chang M; Cho E; Kim YB; Kim CJ; Chung U-; Yoo IK
Sci Rep; 2013; 3():1680. PubMed ID: 23604263
[TBL] [Abstract][Full Text] [Related]
15. Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices.
Carlos E; Branquinho R; Martins R; Kiazadeh A; Fortunato E
Adv Mater; 2021 Feb; 33(7):e2004328. PubMed ID: 33314334
[TBL] [Abstract][Full Text] [Related]
16. Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory.
La Torraca P; Puglisi FM; Padovani A; Larcher L
Materials (Basel); 2019 Oct; 12(21):. PubMed ID: 31652682
[TBL] [Abstract][Full Text] [Related]
17. Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.
Zhang M; Long S; Li Y; Liu Q; Lv H; Miranda E; Suñé J; Liu M
Nanoscale Res Lett; 2016 Dec; 11(1):269. PubMed ID: 27389343
[TBL] [Abstract][Full Text] [Related]
18. Memristive Non-Volatile Memory Based on Graphene Materials.
Shen Z; Zhao C; Qi Y; Mitrovic IZ; Yang L; Wen J; Huang Y; Li P; Zhao C
Micromachines (Basel); 2020 Mar; 11(4):. PubMed ID: 32218324
[TBL] [Abstract][Full Text] [Related]
19. Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides.
Xie H; Hu J; Wang Z; Hu X; Liu H; Qi W; Zhang S
Micromachines (Basel); 2022 Feb; 13(2):. PubMed ID: 35208390
[TBL] [Abstract][Full Text] [Related]
20. A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory.
Chung H; Shin H; Park J; Sun W
Materials (Basel); 2022 Dec; 16(1):. PubMed ID: 36614520
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]