227 related articles for article (PubMed ID: 34065118)
1. Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes.
Zhang B; Luo Y; Mai C; Mu L; Li M; Wang J; Xu W; Peng J
Nanomaterials (Basel); 2021 May; 11(5):. PubMed ID: 34065118
[TBL] [Abstract][Full Text] [Related]
2. Performance Improvement of Quantum Dot Light-Emitting Diodes Using a ZnMgO Electron Transport Layer with a Core/Shell Structure.
Eun YB; Jang GP; Yang JH; Kim SY; Chae YB; Ha MY; Moon DG; Kim CK
Materials (Basel); 2023 Jan; 16(2):. PubMed ID: 36676338
[TBL] [Abstract][Full Text] [Related]
3. Efficient Cadmium-Free Inverted Red Quantum Dot Light-Emitting Diodes.
Lee CY; Naik Mude N; Lampande R; Eun KJ; Yeom JE; Choi HS; Sohn SH; Yoo JM; Kwon JH
ACS Appl Mater Interfaces; 2019 Oct; 11(40):36917-36924. PubMed ID: 31529962
[TBL] [Abstract][Full Text] [Related]
4. Enhanced Efficiency of InP-Based Red Quantum Dot Light-Emitting Diodes.
Li D; Kristal B; Wang Y; Feng J; Lu Z; Yu G; Chen Z; Li Y; Li X; Xu X
ACS Appl Mater Interfaces; 2019 Sep; 11(37):34067-34075. PubMed ID: 31441639
[TBL] [Abstract][Full Text] [Related]
5. Li and Mg Co-Doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting Diodes.
Kim HM; Cho S; Kim J; Shin H; Jang J
ACS Appl Mater Interfaces; 2018 Jul; 10(28):24028-24036. PubMed ID: 29952540
[TBL] [Abstract][Full Text] [Related]
6. Bifunctional Electron-Transporting Agent for Red Colloidal Quantum Dot Light-Emitting Diodes.
Wang YK; Wan H; Xu J; Zhong Y; Jung ED; Park SM; Teale S; Imran M; Yu YJ; Xia P; Won YH; Kim KH; Lu ZH; Liao LS; Hoogland S; Sargent EH
J Am Chem Soc; 2023 Mar; 145(11):6428-6433. PubMed ID: 36897963
[TBL] [Abstract][Full Text] [Related]
7. An efficient organic and inorganic hybrid interlayer for high performance inverted red cadmium-free quantum dot light-emitting diodes.
Mude NN; Kim SJ; Lampande R; Kwon JH
Nanoscale Adv; 2022 Feb; 4(3):904-910. PubMed ID: 36131818
[TBL] [Abstract][Full Text] [Related]
8. Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m
Wang HC; Zhang H; Chen HY; Yeh HC; Tseng MR; Chung RJ; Chen S; Liu RS
Small; 2017 Apr; 13(13):. PubMed ID: 28139872
[TBL] [Abstract][Full Text] [Related]
9. Observation and Suppression of Stacking Interface States in Sandwich-Structured Quantum Dot Light-Emitting Diodes.
Dong JY; Ng KW; Song YM; Li JL; Kong YC; Wang MW; Xu JC; Li L; Chen S; Tang ZK; Wang SP
ACS Appl Mater Interfaces; 2021 Dec; 13(47):56630-56637. PubMed ID: 34794311
[TBL] [Abstract][Full Text] [Related]
10. Solution Processable CdSe/ZnS Quantum Dots Light-Emitting Diodes Using ZnO Nanocrystal as Electron Transport Layer.
Kang BH; Kim JS; Lee JS; Lee SW; Sai-Anand G; Jeong HM; Lee SH; Kwon DH; Kang SW
J Nanosci Nanotechnol; 2015 Sep; 15(9):7416-20. PubMed ID: 26716347
[TBL] [Abstract][Full Text] [Related]
11. High Performance Top-Emission Quantum Dot Light-Emitting Diodes with Mg-Doped ZnO Nanoparticles Used as an Electron Transport Layer.
Kim B; Lee D; Hwang B; Eun Y; Ha MY; Kim CK
J Nanosci Nanotechnol; 2021 Jul; 21(7):3747-3752. PubMed ID: 33715685
[TBL] [Abstract][Full Text] [Related]
12. Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes.
Kim HM; Geng D; Kim J; Hwang E; Jang J
ACS Appl Mater Interfaces; 2016 Oct; 8(42):28727-28736. PubMed ID: 27696804
[TBL] [Abstract][Full Text] [Related]
13. Al-, Ga-, Mg-, or Li-doped zinc oxide nanoparticles as electron transport layers for quantum dot light-emitting diodes.
Alexandrov A; Zvaigzne M; Lypenko D; Nabiev I; Samokhvalov P
Sci Rep; 2020 May; 10(1):7496. PubMed ID: 32366882
[TBL] [Abstract][Full Text] [Related]
14. Stable ZnS Electron Transport Layer for High-Performance Inverted Cadmium-Free Quantum Dot Light-Emitting Diodes.
Mude NN; Khan Y; Thuy TT; Walker B; Kwon JH
ACS Appl Mater Interfaces; 2022 Dec; 14(50):55925-55932. PubMed ID: 36484498
[TBL] [Abstract][Full Text] [Related]
15. High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer.
Sun Y; Wang W; Zhang H; Su Q; Wei J; Liu P; Chen S; Zhang S
ACS Appl Mater Interfaces; 2018 Jun; 10(22):18902-18909. PubMed ID: 29745643
[TBL] [Abstract][Full Text] [Related]
16. Residual-Solvent-Induced Morphological Transformation by Intense Pulsed Light on Spin-Coated and Inkjet-Printed ZnO NP Films for Quantum-Dot Light-Emitting Diodes.
Han YJ; Kang KT; Cho KH
ACS Appl Mater Interfaces; 2021 Oct; 13(42):50111-50120. PubMed ID: 34636558
[TBL] [Abstract][Full Text] [Related]
17. Highly Efficient and Bright Inverted Top-Emitting InP Quantum Dot Light-Emitting Diodes Introducing a Hole-Suppressing Interlayer.
Lee T; Hahm D; Kim K; Bae WK; Lee C; Kwak J
Small; 2019 Dec; 15(50):e1905162. PubMed ID: 31729177
[TBL] [Abstract][Full Text] [Related]
18. Stability of Quantum-Dot Light Emitting Diodes with Alkali Metal Carbonates Blending in Mg Doped ZnO Electron Transport Layer.
Kim HM; Jeong W; Kim JH; Jang J
Nanomaterials (Basel); 2020 Dec; 10(12):. PubMed ID: 33291578
[TBL] [Abstract][Full Text] [Related]
19. Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment.
Pan J; Wei C; Wang L; Zhuang J; Huang Q; Su W; Cui Z; Nathan A; Lei W; Chen J
Nanoscale; 2018 Jan; 10(2):592-602. PubMed ID: 29234769
[TBL] [Abstract][Full Text] [Related]
20. Efficient Structure for InP/ZnS-Based Electroluminescence Device by Embedding the Emitters in the Electron-Dominating Interface.
Wang Y; Chen Z; Wang T; Zhang H; Zhang H; Wang R; Ji W
J Phys Chem Lett; 2020 Mar; 11(5):1835-1839. PubMed ID: 32077702
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
