These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
161 related articles for article (PubMed ID: 34069832)
1. Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates. Park KW; Cho WJ Materials (Basel); 2021 May; 14(10):. PubMed ID: 34069832 [TBL] [Abstract][Full Text] [Related]
2. Effect of Simplified-Single-Step Microwave Annealing in O₂ Ambient for High Performance Solution-Processed In-Ga-Zn-O Thin Film Transistors. Cho SK; Cho WJ J Nanosci Nanotechnol; 2020 Jul; 20(7):4163-4169. PubMed ID: 31968435 [TBL] [Abstract][Full Text] [Related]
3. Improving Charge Trapping/Detrapping Characteristics of Amorphous In-Ga-ZnO Thin-Film-Transistors Using Microwave Irradiation. Lee HW; Choi HS; Cho WJ J Nanosci Nanotechnol; 2019 Oct; 19(10):6164-6169. PubMed ID: 31026929 [TBL] [Abstract][Full Text] [Related]
4. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature. Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751 [TBL] [Abstract][Full Text] [Related]
5. Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing. Min JG; Lee DH; Kim YU; Cho WJ Nanomaterials (Basel); 2022 Feb; 12(4):. PubMed ID: 35214957 [TBL] [Abstract][Full Text] [Related]
6. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors. Wu CH; Chang KM; Chen YM; Zhang YX; Cheng CY J Nanosci Nanotechnol; 2019 Apr; 19(4):2189-2192. PubMed ID: 30486965 [TBL] [Abstract][Full Text] [Related]
7. Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics. Min JG; Cho WJ Molecules; 2021 Nov; 26(23):. PubMed ID: 34885817 [TBL] [Abstract][Full Text] [Related]
8. Microwave-assisted calcination of electrospun indium-gallium-zinc oxide nanofibers for high-performance field-effect transistors. Cho SK; Cho WJ RSC Adv; 2020 Oct; 10(63):38351-38356. PubMed ID: 35517543 [TBL] [Abstract][Full Text] [Related]
9. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array. Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447 [TBL] [Abstract][Full Text] [Related]
10. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing. Kim SH; Cho WJ J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639 [TBL] [Abstract][Full Text] [Related]
11. Lowering the Trap-State Density of Transparent Amorphous Oxide Semiconductor-Based Thin Film Transistors Through Microwave Irradiation. Cho MH; Cho WJ J Nanosci Nanotechnol; 2020 Nov; 20(11):6920-6924. PubMed ID: 32604537 [TBL] [Abstract][Full Text] [Related]
12. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits. Zhang Y; He G; Wang L; Wang W; Xu X; Liu W ACS Nano; 2022 Mar; 16(3):4961-4971. PubMed ID: 35274929 [TBL] [Abstract][Full Text] [Related]
13. High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process. Benwadih M; Coppard R; Bonrad K; Klyszcz A; Vuillaume D ACS Appl Mater Interfaces; 2016 Dec; 8(50):34513-34519. PubMed ID: 27998139 [TBL] [Abstract][Full Text] [Related]
14. Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al Ning H; Zeng Y; Kuang Y; Zheng Z; Zhou P; Yao R; Zhang H; Bao W; Chen G; Fang Z; Peng J ACS Appl Mater Interfaces; 2017 Aug; 9(33):27792-27800. PubMed ID: 28767216 [TBL] [Abstract][Full Text] [Related]
15. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors. Lee H; Chang KS; Tak YJ; Jung TS; Park JW; Kim WG; Chung J; Jeong CB; Kim HJ Sci Rep; 2016 Oct; 6():35044. PubMed ID: 27725695 [TBL] [Abstract][Full Text] [Related]
17. Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors. Oh C; Kim T; Ju MW; Kim MY; Park SH; Lee GH; Kim H; Kim S; Kim BS Materials (Basel); 2023 Sep; 16(18):. PubMed ID: 37763439 [TBL] [Abstract][Full Text] [Related]
18. Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors. Park JW; Tak YJ; Na JW; Lee H; Kim WG; Kim HJ ACS Appl Mater Interfaces; 2018 May; 10(19):16613-16622. PubMed ID: 29682960 [TBL] [Abstract][Full Text] [Related]
19. 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors. Park SY; Choi Y; Seo YH; Kim H; Lee DH; Truong PL; Jeon Y; Yoo H; Kwon SJ; Lee D; Cho ES Micromachines (Basel); 2024 Jan; 15(1):. PubMed ID: 38258222 [TBL] [Abstract][Full Text] [Related]
20. Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability. Han KL; Han JH; Kim BS; Jeong HJ; Choi JM; Hwang JE; Oh S; Park JS ACS Appl Mater Interfaces; 2020 Jan; 12(3):3784-3791. PubMed ID: 31878779 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]