These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

134 related articles for article (PubMed ID: 34073095)

  • 1. Hysteresis in As-Synthesized MoS
    Marquez C; Salazar N; Gity F; Galdon JC; Navarro C; Sampedro C; Hurley PK; Chang EY; Gamiz F
    Micromachines (Basel); 2021 May; 12(6):. PubMed ID: 34073095
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
    Lee GH; Cui X; Kim YD; Arefe G; Zhang X; Lee CH; Ye F; Watanabe K; Taniguchi T; Kim P; Hone J
    ACS Nano; 2015 Jul; 9(7):7019-26. PubMed ID: 26083310
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS
    Lee C; Rathi S; Khan MA; Lim D; Kim Y; Yun SJ; Youn DH; Watanabe K; Taniguchi T; Kim GH
    Nanotechnology; 2018 Aug; 29(33):335202. PubMed ID: 29786609
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.
    Lee GH; Yu YJ; Cui X; Petrone N; Lee CH; Choi MS; Lee DY; Lee C; Yoo WJ; Watanabe K; Taniguchi T; Nuckolls C; Kim P; Hone J
    ACS Nano; 2013 Sep; 7(9):7931-6. PubMed ID: 23924287
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Flexible Molybdenum Disulfide (MoS
    Singh E; Singh P; Kim KS; Yeom GY; Nalwa HS
    ACS Appl Mater Interfaces; 2019 Mar; 11(12):11061-11105. PubMed ID: 30830744
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS
    Abedin S; Kurtash V; Mathew S; Thiele S; Jacobs HO; Pezoldt J
    Materials (Basel); 2024 Mar; 17(6):. PubMed ID: 38541504
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS
    Jawa H; Varghese A; Lodha S
    ACS Appl Mater Interfaces; 2021 Feb; 13(7):9186-9194. PubMed ID: 33555851
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.
    Lee HS; Baik SS; Lee K; Min SW; Jeon PJ; Kim JS; Choi K; Choi HJ; Kim JH; Im S
    ACS Nano; 2015 Aug; 9(8):8312-20. PubMed ID: 26169189
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Diode-Like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride.
    Jaiswal HN; Liu M; Shahi S; Wei S; Lee J; Chakravarty A; Guo Y; Wang R; Lee JM; Chang C; Fu Y; Dixit R; Liu X; Yang C; Yao F; Li H
    Adv Mater; 2020 Sep; 32(36):e2002716. PubMed ID: 32725788
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors.
    Shimazu Y; Tashiro M; Sonobe S; Takahashi M
    Sci Rep; 2016 Jul; 6():30084. PubMed ID: 27435309
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS
    Khan MA; Rathi S; Lee C; Lim D; Kim Y; Yun SJ; Youn DH; Kim GH
    ACS Appl Mater Interfaces; 2018 Jul; 10(28):23961-23967. PubMed ID: 29938500
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Manipulation of the electrical and memory properties of MoS
    Sleziona S; Pelella A; Faella E; Kharsah O; Skopinski L; Maas A; Liebsch Y; Schmeink J; Di Bartolomeo A; Schleberger M
    Nanoscale Adv; 2023 Dec; 5(24):6958-6966. PubMed ID: 38059017
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Hysteresis in single-layer MoS2 field effect transistors.
    Late DJ; Liu B; Matte HS; Dravid VP; Rao CN
    ACS Nano; 2012 Jun; 6(6):5635-41. PubMed ID: 22577885
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electrical and photo-electrical properties of MoS
    Khan MF; Nazir G; Lermolenko VM; Eom J
    Sci Technol Adv Mater; 2016; 17(1):166-176. PubMed ID: 27877867
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Toward barrier free contact to molybdenum disulfide using graphene electrodes.
    Liu Y; Wu H; Cheng HC; Yang S; Zhu E; He Q; Ding M; Li D; Guo J; Weiss NO; Huang Y; Duan X
    Nano Lett; 2015 May; 15(5):3030-4. PubMed ID: 25879371
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Crested two-dimensional transistors.
    Liu T; Liu S; Tu KH; Schmidt H; Chu L; Xiang D; Martin J; Eda G; Ross CA; Garaj S
    Nat Nanotechnol; 2019 Mar; 14(3):223-226. PubMed ID: 30718834
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.
    Choi MS; Lee GH; Yu YJ; Lee DY; Lee SH; Kim P; Hone J; Yoo WJ
    Nat Commun; 2013; 4():1624. PubMed ID: 23535645
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Capping Layers to Improve the Electrical Stress Stability of MoS
    Doherty JL; Noyce SG; Cheng Z; Abuzaid H; Franklin AD
    ACS Appl Mater Interfaces; 2020 Aug; 12(31):35698-35706. PubMed ID: 32805797
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.
    Tsai MY; Tarasov A; Hesabi ZR; Taghinejad H; Campbell PM; Joiner CA; Adibi A; Vogel EM
    ACS Appl Mater Interfaces; 2015 Jun; 7(23):12850-5. PubMed ID: 26010011
    [TBL] [Abstract][Full Text] [Related]  

  • 20. All-Transfer Electrode Interface Engineering Toward Harsh-Environment-Resistant MoS
    Wu Y; Xin Z; Zhang Z; Wang B; Peng R; Wang E; Shi R; Liu Y; Guo J; Liu K; Liu K
    Adv Mater; 2023 May; 35(18):e2210735. PubMed ID: 36652589
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.