These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
256 related articles for article (PubMed ID: 34105972)
1. Ge Kang Y; Xu S; Han K; Kong EY; Song Z; Luo S; Kumar A; Wang C; Fan W; Liang G; Gong X Nano Lett; 2021 Jul; 21(13):5555-5563. PubMed ID: 34105972 [TBL] [Abstract][Full Text] [Related]
2. High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform. Wang W; Lei D; Huang YC; Lee KH; Loke WK; Dong Y; Xu S; Tan CS; Wang H; Yoon SF; Gong X; Yeo YC Opt Express; 2018 Apr; 26(8):10305-10314. PubMed ID: 29715969 [TBL] [Abstract][Full Text] [Related]
3. Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors. Tang J; Wang CY; Xiu F; Lang M; Chu LW; Tsai CJ; Chueh YL; Chen LJ; Wang KL ACS Nano; 2011 Jul; 5(7):6008-15. PubMed ID: 21699197 [TBL] [Abstract][Full Text] [Related]
4. Experimental study on the subthreshold swing of silicon nanowire transistors. Zhang Y; Xiong Y; Yang X; Wang Y; Han W; Yang F J Nanosci Nanotechnol; 2010 Nov; 10(11):7113-6. PubMed ID: 21137876 [TBL] [Abstract][Full Text] [Related]
5. Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics. Zafar S; D'Emic C; Jagtiani A; Kratschmer E; Miao X; Zhu Y; Mo R; Sosa N; Hamann H; Shahidi G; Riel H ACS Nano; 2018 Jul; 12(7):6577-6587. PubMed ID: 29932634 [TBL] [Abstract][Full Text] [Related]
6. Quantum confinement induced performance enhancement in sub-5-nm lithographic Si nanowire transistors. Trivedi K; Yuk H; Floresca HC; Kim MJ; Hu W Nano Lett; 2011 Apr; 11(4):1412-7. PubMed ID: 21375286 [TBL] [Abstract][Full Text] [Related]
8. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. Ju S; Lee K; Janes DB; Yoon MH; Facchetti A; Marks TJ Nano Lett; 2005 Nov; 5(11):2281-6. PubMed ID: 16277468 [TBL] [Abstract][Full Text] [Related]
9. High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors. Wirths S; Stange D; Pampillón MA; Tiedemann AT; Mussler G; Fox A; Breuer U; Baert B; San Andrés E; Nguyen ND; Hartmann JM; Ikonic Z; Mantl S; Buca D ACS Appl Mater Interfaces; 2015 Jan; 7(1):62-7. PubMed ID: 25531887 [TBL] [Abstract][Full Text] [Related]
10. SiX Yan S; Wang K; Guo Z; Wu YN; Chen S Nano Lett; 2024 May; 24(20):6158-6164. PubMed ID: 38723204 [TBL] [Abstract][Full Text] [Related]
11. Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications. Yin Y; Zhang Z; Zhong H; Shao C; Wan X; Zhang C; Robertson J; Guo Y ACS Appl Mater Interfaces; 2021 Jan; 13(2):3387-3396. PubMed ID: 33404208 [TBL] [Abstract][Full Text] [Related]
12. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118 [TBL] [Abstract][Full Text] [Related]
13. Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET. Jang WD; Yoon YJ; Cho MS; Jung JH; Lee SH; Jang J; Bae JH; Kang IM Micromachines (Basel); 2019 Oct; 10(11):. PubMed ID: 31683726 [TBL] [Abstract][Full Text] [Related]
14. Sub-kT/q switching in In Su M; Zou X; Gong Y; Wang J; Liu Y; Ho JC; Liu X; Liao L Nanoscale; 2018 Oct; 10(40):19131-19139. PubMed ID: 30298891 [TBL] [Abstract][Full Text] [Related]
15. Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors. Jang WD; Yoon YJ; Cho MS; Kim BG; Kang DIM J Nanosci Nanotechnol; 2019 Oct; 19(10):6036-6042. PubMed ID: 31026904 [TBL] [Abstract][Full Text] [Related]
17. Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length? Xu L; Yang J; Qiu C; Liu S; Zhou W; Li Q; Shi B; Ma J; Yang C; Lu J; Zhang Z ACS Appl Mater Interfaces; 2021 Jul; 13(27):31957-31967. PubMed ID: 34210135 [TBL] [Abstract][Full Text] [Related]
19. Scaling of MoS Tian J; Wang Q; Huang X; Tang J; Chu Y; Wang S; Shen C; Zhao Y; Li N; Liu J; Ji Y; Huang B; Peng Y; Yang R; Yang W; Watanabe K; Taniguchi T; Bai X; Shi D; Du L; Zhang G Nano Lett; 2023 Apr; 23(7):2764-2770. PubMed ID: 37010357 [TBL] [Abstract][Full Text] [Related]