These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
179 related articles for article (PubMed ID: 34121151)
21. Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier. Zhao Z; Liu Y; Li P; Zhou X; Yang B; Xiang Y Micromachines (Basel); 2024 Jun; 15(6):. PubMed ID: 38930732 [TBL] [Abstract][Full Text] [Related]
22. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes. Hu H; Zhou S; Liu X; Gao Y; Gui C; Liu S Sci Rep; 2017 Mar; 7():44627. PubMed ID: 28294166 [TBL] [Abstract][Full Text] [Related]
23. Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer. Zhang Q; Parimoo H; Martel E; Zhao S Sci Rep; 2022 May; 12(1):7230. PubMed ID: 35508615 [TBL] [Abstract][Full Text] [Related]
24. Nanoparticle-Doped Polydimethylsiloxane Fluid Enhances the Optical Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes. Ye ZT; Pai YM; Lin CH; Chen LC; Nguyen HT; Wang HC Nanoscale Res Lett; 2019 Jul; 14(1):236. PubMed ID: 31309306 [TBL] [Abstract][Full Text] [Related]
25. Microstructured Air Cavities as High-Index Contrast Substrates with Strong Diffraction for Light-Emitting Diodes. Moon YJ; Moon D; Jang J; Na JY; Song JH; Seo MK; Kim S; Bae D; Park EH; Park Y; Kim SK; Yoon E Nano Lett; 2016 May; 16(5):3301-8. PubMed ID: 27045458 [TBL] [Abstract][Full Text] [Related]
26. Nanopatterned sapphire substrates in deep-UV LEDs: is there an optical benefit? Manley P; Walde S; Hagedorn S; Hammerschmidt M; Burger S; Becker C Opt Express; 2020 Feb; 28(3):3619-3635. PubMed ID: 32122027 [TBL] [Abstract][Full Text] [Related]
27. Enhanced performance of 275-nm AlGaN-based deep-ultraviolet LEDs via internal-roughed sapphire and SiO Qian Y; Liao Z; Lv Z; Qi S; Zhou S Opt Lett; 2023 Feb; 48(4):1072-1075. PubMed ID: 36791013 [TBL] [Abstract][Full Text] [Related]
28. High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer. Oh JT; Moon YT; Kang DS; Park CK; Han JW; Jung MH; Sung YJ; Jeong HH; Song JO; Seong TY Opt Express; 2018 Mar; 26(5):5111-5117. PubMed ID: 29529718 [TBL] [Abstract][Full Text] [Related]
29. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al Wang TY; Lai WC; Sie SY; Chang SP; Kuo CH; Sheu JK; Bow JS ACS Omega; 2022 May; 7(17):15027-15036. PubMed ID: 35557702 [TBL] [Abstract][Full Text] [Related]
30. Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. Saifaddin BK; Iza M; Foronda H; Almogbel A; Zollner CJ; Wu F; Alyamani A; Albadri A; Nakamura S; DenBaars SP; Speck JS Opt Express; 2019 Aug; 27(16):A1074-A1083. PubMed ID: 31510492 [TBL] [Abstract][Full Text] [Related]
31. Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes. Lee KH; Moon YT; Song JO; Kwak JS Sci Rep; 2015 May; 5():9717. PubMed ID: 26010378 [TBL] [Abstract][Full Text] [Related]
32. Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones. Zhang G; Shao H; Zhang M; Zhao Z; Chu C; Tian K; Fan C; Zhang Y; Zhang ZH Opt Express; 2021 Sep; 29(19):30532-30542. PubMed ID: 34614776 [TBL] [Abstract][Full Text] [Related]
33. Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes. Wang Y; Zhang Z; Guo L; Chen Y; Li Y; Qi Z; Ben J; Sun X; Li D Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947677 [TBL] [Abstract][Full Text] [Related]
34. Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes. Park HH; Zhang X; Cho Y; Kim DW; Kim J; Lee KW; Choi J; Lee HK; Jung SH; Her EJ; Kim CH; Moon AY; Shin CS; Shin HB; Sung HK; Park KH; Park HH; Kim HJ; Kang HK Opt Express; 2014 May; 22 Suppl 3():A723-34. PubMed ID: 24922380 [TBL] [Abstract][Full Text] [Related]
35. Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes. Wang Y; Li P; Zhang X; Xu S; Zhou X; Wu J; Yue W; Hao Y Materials (Basel); 2020 Jan; 13(2):. PubMed ID: 31963566 [TBL] [Abstract][Full Text] [Related]
36. Development of highly efficient ultraviolet LEDs on hybrid patterned sapphire substrates. Yu H; Jia H; Liu Z; Memon MH; Tian M; Fang S; Wang D; Zhang H; Liu J; Xu L; Yang T; Wei L; Liao Z; Sun H Opt Lett; 2021 Nov; 46(21):5356-5359. PubMed ID: 34724474 [TBL] [Abstract][Full Text] [Related]
37. Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes. Tawfik WZ; Bea SJ; Yang SB; Ryu SW; Lee JK J Nanosci Nanotechnol; 2015 Jul; 15(7):5140-3. PubMed ID: 26373092 [TBL] [Abstract][Full Text] [Related]
38. In-depth insights into polarization-dependent light extraction mechanisms of AlGaN-based deep ultraviolet light-emitting diodes. Zheng T; Zhou C; Zhu H; Lin Q; Yang L; Cai D; Kang J Opt Express; 2023 May; 31(10):15653-15673. PubMed ID: 37157661 [TBL] [Abstract][Full Text] [Related]
39. Enhanced light extraction of deep ultraviolet light-emitting diodes by using optimized aluminum reflector. Liu X; Mou Y; Wang H; Liang R; Wang X; Peng Y; Chen M Appl Opt; 2018 Sep; 57(25):7325-7328. PubMed ID: 30182995 [TBL] [Abstract][Full Text] [Related]
40. On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes. Che J; Chu C; Tian K; Kou J; Shao H; Zhang Y; Bi W; Zhang ZH Nanoscale Res Lett; 2018 Nov; 13(1):355. PubMed ID: 30411256 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]