193 related articles for article (PubMed ID: 34138301)
21. Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.
Kaushik PK; Singh SK; Gupta A; Basu A; Chang EY
Nanoscale Res Lett; 2021 Oct; 16(1):159. PubMed ID: 34669088
[TBL] [Abstract][Full Text] [Related]
22. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
Li Y; Xiang J; Qian F; Gradecak S; Wu Y; Yan H; Blom DA; Lieber CM
Nano Lett; 2006 Jul; 6(7):1468-73. PubMed ID: 16834431
[TBL] [Abstract][Full Text] [Related]
23. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT.
Niu D; Wang Q; Li W; Chen C; Xu J; Jiang L; Feng C; Xiao H; Wang Q; Xu X; Wang X
Micromachines (Basel); 2021 Jan; 12(2):. PubMed ID: 33530451
[TBL] [Abstract][Full Text] [Related]
24. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.
Chen KM; Lin CJ; Chuang CW; Pai HC; Chang EY; Huang GW
Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241634
[TBL] [Abstract][Full Text] [Related]
25. Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
Hospodková A; Hájek F; Hubáček T; Gedeonová Z; Hubík P; Hývl M; Pangrác J; Dominec F; Košutová T
ACS Appl Mater Interfaces; 2023 Apr; 15(15):19646-19652. PubMed ID: 37022802
[TBL] [Abstract][Full Text] [Related]
26. Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.
Field DE; Cuenca JA; Smith M; Fairclough SM; Massabuau FC; Pomeroy JW; Williams O; Oliver RA; Thayne I; Kuball M
ACS Appl Mater Interfaces; 2020 Dec; 12(48):54138-54145. PubMed ID: 33196180
[TBL] [Abstract][Full Text] [Related]
27. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
Lee HP; Perozek J; Rosario LD; Bayram C
Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
[TBL] [Abstract][Full Text] [Related]
28. High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer.
Im KS; Mallem SPR; Choi JS; Hwang YM; Roh JS; An SJ; Lee JH
Nanomaterials (Basel); 2022 Feb; 12(4):. PubMed ID: 35214971
[TBL] [Abstract][Full Text] [Related]
29. Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation.
Alathbah M; Elgaid K
Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422436
[TBL] [Abstract][Full Text] [Related]
30. Strain-Controlled Flexible Graphene/GaN/PDMS Sensors Based on the Piezotronic Effect.
Puneetha P; Mallem SPR; Lee YW; Shim J
ACS Appl Mater Interfaces; 2020 Aug; 12(32):36660-36669. PubMed ID: 32686933
[TBL] [Abstract][Full Text] [Related]
31. Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs.
Guo H; Chen T; Shi S
Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31936651
[TBL] [Abstract][Full Text] [Related]
32. Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs.
Nie Z; Wang K; Liu X; Wang H
Micromachines (Basel); 2024 Apr; 15(5):. PubMed ID: 38793143
[TBL] [Abstract][Full Text] [Related]
33. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor.
Jiang C; Liu T; Du C; Huang X; Liu M; Zhao Z; Li L; Pu X; Zhai J; Hu W; Lin Wang Z
Nanotechnology; 2017 Nov; 28(45):455203. PubMed ID: 29039359
[TBL] [Abstract][Full Text] [Related]
34. Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN/GaN HEMTs.
Yu CH; Luo QZ; Luo XD; Liu PS
ScientificWorldJournal; 2013; 2013():931980. PubMed ID: 24348195
[TBL] [Abstract][Full Text] [Related]
35. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
Lee YJ; Yao YC; Huang CY; Lin TY; Cheng LL; Liu CY; Wang MT; Hwang JM
Nanoscale Res Lett; 2014; 9(1):433. PubMed ID: 25206318
[TBL] [Abstract][Full Text] [Related]
36. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.
Lee MW; Chuang CW; Gamiz F; Chang EY; Lin YC
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258200
[TBL] [Abstract][Full Text] [Related]
37. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
[TBL] [Abstract][Full Text] [Related]
38. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
[TBL] [Abstract][Full Text] [Related]
39. Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers.
Guo H; Li Y; Yu X; Zhou J; Kong Y
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144109
[TBL] [Abstract][Full Text] [Related]
40. Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors.
Chakraborty S; Kim TW
Micromachines (Basel); 2022 Jan; 13(1):. PubMed ID: 35056249
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
