These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

170 related articles for article (PubMed ID: 34170656)

  • 1. Modulation of the Al/Cu
    Kim HJ; Park SP; Min WK; Kim D; Park K; Kim HJ
    ACS Appl Mater Interfaces; 2021 Jul; 13(26):31077-31085. PubMed ID: 34170656
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application.
    Kaufmann IR; Zerey O; Meyers T; Reker J; Vidor F; Hilleringmann U
    Nanomaterials (Basel); 2021 Apr; 11(5):. PubMed ID: 33946278
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Gallium Doping Effects for Improving Switching Performance of p-Type Copper(I) Oxide Thin-Film Transistors.
    Bae JH; Lee JH; Park SP; Jung TS; Kim HJ; Kim D; Lee SW; Park KS; Yoon S; Kang I; Kim HJ
    ACS Appl Mater Interfaces; 2020 Aug; 12(34):38350-38356. PubMed ID: 32706244
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Schottky barrier thin film transistors using solution-processed n-ZnO.
    Adl AH; Ma A; Gupta M; Benlamri M; Tsui YY; Barlage DW; Shankar K
    ACS Appl Mater Interfaces; 2012 Mar; 4(3):1423-8. PubMed ID: 22387678
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.
    Chu HC; Shen YS; Hsieh CH; Huang JH; Wu YH
    ACS Appl Mater Interfaces; 2015 Jul; 7(28):15129-37. PubMed ID: 26148216
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Multimode Operation of Organic-Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films.
    Tang T; Zessin J; Talnack F; Haase K; Ortstein K; Li B; Löffler M; Rellinghaus B; Hambsch M; Mannsfeld SCB
    ACS Appl Mater Interfaces; 2021 Sep; 13(36):43051-43062. PubMed ID: 34478260
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Back-Channel Defect Termination by Sulfur for p-Channel Cu
    Chang H; Huang CH; Matsuzaki K; Nomura K
    ACS Appl Mater Interfaces; 2020 Nov; 12(46):51581-51588. PubMed ID: 33147003
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors.
    Kim GB; Kim T; Bang SW; Hur JS; Choi CH; Kim MJ; Jeong JK
    ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38662878
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO
    Kim GS; Kim SW; Kim SH; Park J; Seo Y; Cho BJ; Shin C; Shim JH; Yu HY
    ACS Appl Mater Interfaces; 2016 Dec; 8(51):35419-35425. PubMed ID: 27977113
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect.
    Liang K; Li D; Ren H; Zhao M; Wang H; Ding M; Xu G; Zhao X; Long S; Zhu S; Sheng P; Li W; Lin X; Zhu B
    Nanomicro Lett; 2021 Aug; 13(1):164. PubMed ID: 34342729
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer.
    Jeong JH; Seo SW; Kim D; Yoon SH; Lee SH; Kuh BJ; Kim T; Jeong JK
    Sci Rep; 2024 May; 14(1):10953. PubMed ID: 38740958
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Switching Enhancement via a Back-Channel Phase-Controlling Layer for p-Type Copper Oxide Thin-Film Transistors.
    Min WK; Park SP; Kim HJ; Lee JH; Park K; Kim D; Kim KW; Kim HJ
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):24929-24939. PubMed ID: 32390437
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes.
    Kwon J; Hong YK; Kwon HJ; Park YJ; Yoo B; Kim J; Grigoropoulos CP; Oh MS; Kim S
    Nanotechnology; 2015 Jan; 26(3):035202. PubMed ID: 25548952
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.
    Liu X; Xu H; Ning H; Lu K; Zhang H; Zhang X; Yao R; Fang Z; Lu X; Peng J
    Sci Rep; 2018 Mar; 8(1):4160. PubMed ID: 29515163
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.
    Luo D; Zhao M; Xu M; Li M; Chen Z; Wang L; Zou J; Tao H; Wang L; Peng J
    ACS Appl Mater Interfaces; 2014 Jul; 6(14):11318-25. PubMed ID: 24969359
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate.
    Lu K; Yao R; Xu W; Ning H; Zhang X; Zhang G; Li Y; Zhong J; Yang Y; Peng J
    Research (Wash D C); 2021; 2021():5758435. PubMed ID: 33842892
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Scalability of Schottky barrier metal-oxide-semiconductor transistors.
    Jang M
    Nano Converg; 2016; 3(1):11. PubMed ID: 28191421
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors.
    Hennek JW; Xia Y; Everaerts K; Hersam MC; Facchetti A; Marks TJ
    ACS Appl Mater Interfaces; 2012 Mar; 4(3):1614-9. PubMed ID: 22321212
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability.
    Jung SH; Yang JS; Kim YB; Deshpande NG; Kim DS; Choi JH; Suh HW; Lee HH; Cho HK
    Mater Horiz; 2022 Mar; 9(3):1010-1022. PubMed ID: 34985074
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.