311 related articles for article (PubMed ID: 34180652)
1. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.
Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ
ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652
[TBL] [Abstract][Full Text] [Related]
2. Low-temperature fabrication of an HfO
Hong S; Park SP; Kim YG; Kang BH; Na JW; Kim HJ
Sci Rep; 2017 Nov; 7(1):16265. PubMed ID: 29176568
[TBL] [Abstract][Full Text] [Related]
3. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
[TBL] [Abstract][Full Text] [Related]
4. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
[TBL] [Abstract][Full Text] [Related]
5. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
[TBL] [Abstract][Full Text] [Related]
6. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
Kim SH; Cho WJ
J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
[TBL] [Abstract][Full Text] [Related]
7. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
[TBL] [Abstract][Full Text] [Related]
8. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
[TBL] [Abstract][Full Text] [Related]
9. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
Zhang Y; Xie H; Dong C
Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
[TBL] [Abstract][Full Text] [Related]
10. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS
Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447
[TBL] [Abstract][Full Text] [Related]
11. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.
Heo JS; Jo JW; Kang J; Jeong CY; Jeong HY; Kim SK; Kim K; Kwon HI; Kim J; Kim YH; Kim MG; Park SK
ACS Appl Mater Interfaces; 2016 Apr; 8(16):10403-12. PubMed ID: 27035796
[TBL] [Abstract][Full Text] [Related]
12. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
Moon CJ; Kim HS
ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
[TBL] [Abstract][Full Text] [Related]
13. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
Han Y; Lee DH; Cho ES; Kwon SJ; Yoo H
Micromachines (Basel); 2023 Jul; 14(7):. PubMed ID: 37512704
[TBL] [Abstract][Full Text] [Related]
14. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.
Li ZY; Song SM; Wang WX; Gong JH; Tong Y; Dai MJ; Lin SS; Yang TL; Sun H
Nanotechnology; 2022 Oct; 34(2):. PubMed ID: 36219884
[TBL] [Abstract][Full Text] [Related]
15. Solution-Based Indium-Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide.
Jeon W; Choi P; Park A; Lee D; Choi D; Lee S; Choi B
J Nanosci Nanotechnol; 2020 Nov; 20(11):6643-6647. PubMed ID: 32604489
[TBL] [Abstract][Full Text] [Related]
16. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.
Kim WG; Tak YJ; Du Ahn B; Jung TS; Chung KB; Kim HJ
Sci Rep; 2016 Mar; 6():23039. PubMed ID: 26972476
[TBL] [Abstract][Full Text] [Related]
17. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
[TBL] [Abstract][Full Text] [Related]
18. Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics.
Na JW; Kim HJ; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2018 Oct; 10(43):37207-37215. PubMed ID: 30338976
[TBL] [Abstract][Full Text] [Related]
19. Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.
Liu J; Guo J; Yang W; Wang C; Yuan B; Liu J; Wu Z; Zhang Q; Liu D; Chen H; Yu Y; Liu S; Shao G; Yao Z
ACS Appl Mater Interfaces; 2020 Sep; 12(39):43950-43957. PubMed ID: 32886486
[TBL] [Abstract][Full Text] [Related]
20. Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors.
Lee IS; Tak YJ; Kang BH; Yoo H; Jung S; Kim HJ
ACS Appl Mater Interfaces; 2020 Apr; 12(16):19123-19129. PubMed ID: 32227838
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
