344 related articles for article (PubMed ID: 34206818)
1. Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps.
Song YL; Reddy MK; Chang LM; Sheu G
Micromachines (Basel); 2021 Jun; 12(7):. PubMed ID: 34206818
[TBL] [Abstract][Full Text] [Related]
2. Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.
Kaushik PK; Singh SK; Gupta A; Basu A; Chang EY
Nanoscale Res Lett; 2021 Oct; 16(1):159. PubMed ID: 34669088
[TBL] [Abstract][Full Text] [Related]
3. A Novel Nitrogen Ion Implantation Technique for Turning Thin Film "Normally On" AlGaN/GaN Transistor into "Normally Off" Using TCAD Simulation.
Sheu G; Song YL; Susmitha D; Issac K; Mogarala R
Membranes (Basel); 2021 Nov; 11(11):. PubMed ID: 34832128
[TBL] [Abstract][Full Text] [Related]
4. Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode.
Zhang H; Kang X; Zheng Y; Wei K; Wu H; Liu X; Ye T; Jin Z
Micromachines (Basel); 2022 May; 13(5):. PubMed ID: 35630215
[TBL] [Abstract][Full Text] [Related]
5. Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN
Zhao D; He L; Wu L; Xiao Q; Liu C; Chen Y; He Z; Yang D; Lv M; Cheng Z
Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398901
[TBL] [Abstract][Full Text] [Related]
6. Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs.
Ma M; Cao Y; Lv H; Wang Z; Zhang X; Chen C; Wu L; Lv L; Zheng X; Tian W; Ma X; Hao Y
Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677140
[TBL] [Abstract][Full Text] [Related]
7. Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation.
Sheu G; Song YL; Mogarala R; Susmitha D; Issac K
Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208294
[TBL] [Abstract][Full Text] [Related]
8. Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode.
Zhang H; Kang X; Zheng Y; Wu H; Wei K; Liu X; Ye T; Jin Z
Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832708
[TBL] [Abstract][Full Text] [Related]
9. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.
Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y
Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635
[TBL] [Abstract][Full Text] [Related]
10. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer.
Weng YC; Lin YC; Hsu HT; Kao ML; Huang HY; Ueda D; Ha MT; Yang CY; Maa JS; Chang EY; Dee CF
Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160649
[TBL] [Abstract][Full Text] [Related]
11. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A; Borga M; Meneghini M; De Santi C; Benazzi D; Besendörfer S; Püsche R; Derluyn J; Degroote S; Germain M; Kabouche R; Abid I; Meissner E; Zanoni E; Medjdoub F; Meneghesso G
Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31963553
[TBL] [Abstract][Full Text] [Related]
12. A Novel AlGaN/Si
Guo J; Hu S; Li P; Jiang J; Wang R; Wang Y; Wu H
Micromachines (Basel); 2022 Mar; 13(3):. PubMed ID: 35334756
[TBL] [Abstract][Full Text] [Related]
13. Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.
Liu AC; Huang YW; Chen HC; Kuo HC
Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675328
[TBL] [Abstract][Full Text] [Related]
14. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
[TBL] [Abstract][Full Text] [Related]
15. Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages.
Lin Y; Kao ML; Weng YC; Dee CF; Chen SC; Kuo HC; Lin CH; Chang EY
Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557439
[TBL] [Abstract][Full Text] [Related]
16. A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance.
Liu J; Guo Y; Zhang J; Yao J; Li M; Zhang M; Chen J; Huang X; Huang C
Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683299
[TBL] [Abstract][Full Text] [Related]
17. Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
Hospodková A; Hájek F; Hubáček T; Gedeonová Z; Hubík P; Hývl M; Pangrác J; Dominec F; Košutová T
ACS Appl Mater Interfaces; 2023 Apr; 15(15):19646-19652. PubMed ID: 37022802
[TBL] [Abstract][Full Text] [Related]
18. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.
Abidin MS; Hashim AM; Sharifabad ME; Rahman SF; Sadoh T
Sensors (Basel); 2011; 11(3):3067-77. PubMed ID: 22163786
[TBL] [Abstract][Full Text] [Related]
19. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.
Khediri A; Talbi A; Jaouad A; Maher H; Soltani A
Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832696
[TBL] [Abstract][Full Text] [Related]
20. Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates.
Huang CR; Chiu HC; Liu CH; Wang HC; Kao HL; Chen CT; Chang KJ
Membranes (Basel); 2021 Oct; 11(11):. PubMed ID: 34832077
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]