158 related articles for article (PubMed ID: 34217948)
1. Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride.
Wang J; Li H; Li H; Keller S; Mishra UK; Nener BD; Parish G; Atkin R
J Colloid Interface Sci; 2021 Dec; 603():604-614. PubMed ID: 34217948
[TBL] [Abstract][Full Text] [Related]
2. pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption.
Wang J; Zhang X; Li H; Wang C; Li H; Keller S; Mishra UK; Nener BD; Parish G; Atkin R
J Colloid Interface Sci; 2021 Feb; 583():331-339. PubMed ID: 33007589
[TBL] [Abstract][Full Text] [Related]
3. pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption.
Wang J; Zhang X; Wang C; Li H; Li H; Keller S; Mishra UK; Nener BD; Parish G; Atkin R
J Colloid Interface Sci; 2019 Nov; 556():680-688. PubMed ID: 31499439
[TBL] [Abstract][Full Text] [Related]
4. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.
Abidin MS; Hashim AM; Sharifabad ME; Rahman SF; Sadoh T
Sensors (Basel); 2011; 11(3):3067-77. PubMed ID: 22163786
[TBL] [Abstract][Full Text] [Related]
5. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.
Chu BH; Kang BS; Hung SC; Chen KH; Ren F; Sciullo A; Gila BP; Pearton SJ
J Diabetes Sci Technol; 2010 Jan; 4(1):171-9. PubMed ID: 20167182
[TBL] [Abstract][Full Text] [Related]
6. CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.
Linkohr S; Pletschen W; Schwarz SU; Anzt J; Cimalla V; Ambacher O
J Biotechnol; 2013 Feb; 163(4):354-61. PubMed ID: 22940651
[TBL] [Abstract][Full Text] [Related]
7. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A; Borga M; Meneghini M; De Santi C; Benazzi D; Besendörfer S; Püsche R; Derluyn J; Degroote S; Germain M; Kabouche R; Abid I; Meissner E; Zanoni E; Medjdoub F; Meneghesso G
Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31963553
[TBL] [Abstract][Full Text] [Related]
8. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
Li Y; Xiang J; Qian F; Gradecak S; Wu Y; Yan H; Blom DA; Lieber CM
Nano Lett; 2006 Jul; 6(7):1468-73. PubMed ID: 16834431
[TBL] [Abstract][Full Text] [Related]
9. In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication.
Yang Y; Fan R; Zhang P; Wang L; Pan M; Wang Q; Xie X; Xu S; Wang C; Wu C; Xu M; Jin J; Zhang DW
Micromachines (Basel); 2023 Jun; 14(7):. PubMed ID: 37512589
[TBL] [Abstract][Full Text] [Related]
10. Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach).
Kovalenko KL; Kozlovskiy SI; Sharan NN; Venger EF
J Phys Condens Matter; 2024 May; 36(32):. PubMed ID: 38738500
[TBL] [Abstract][Full Text] [Related]
11. Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
Vuong TA; Cha HY; Kim H
Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34068454
[TBL] [Abstract][Full Text] [Related]
12. Adsorption and surfactant-mediated desorption of poly(vinylpyrrolidone) on plasma- and piranha-cleaned silica surfaces.
de Vos WM; Cattoz B; Avery MP; Cosgrove T; Prescott SW
Langmuir; 2014 Jul; 30(28):8425-31. PubMed ID: 25007346
[TBL] [Abstract][Full Text] [Related]
13. Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor.
Mahaboob I; Reinertsen RJ; McEwen B; Hogan K; Rocco E; Melendez JA; Cady NC; Shahedipour-Sandvik F
Exp Biol Med (Maywood); 2021 Mar; 246(5):523-528. PubMed ID: 33203229
[TBL] [Abstract][Full Text] [Related]
14. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
Chang HM; Lai WC; Chen WS; Chang SJ
Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
[TBL] [Abstract][Full Text] [Related]
15. Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN/GaN HEMTs.
Yu CH; Luo QZ; Luo XD; Liu PS
ScientificWorldJournal; 2013; 2013():931980. PubMed ID: 24348195
[TBL] [Abstract][Full Text] [Related]
16. Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.
Kaushik PK; Singh SK; Gupta A; Basu A; Chang EY
Nanoscale Res Lett; 2021 Oct; 16(1):159. PubMed ID: 34669088
[TBL] [Abstract][Full Text] [Related]
17. Ionic Surfactant Binding to pH-Responsive Polyelectrolyte Brush-Grafted Nanoparticles in Suspension and on Charged Surfaces.
Riley JK; An J; Tilton RD
Langmuir; 2015 Dec; 31(51):13680-9. PubMed ID: 26649483
[TBL] [Abstract][Full Text] [Related]
18. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating.
Liu X; Lu Y; Yu W; Wu J; He J; Tang D; Liu Z; Somasuntharam P; Zhu D; Liu W; Cao P; Han S; Chen S; Tan LS
Sci Rep; 2015 Sep; 5():14092. PubMed ID: 26364872
[TBL] [Abstract][Full Text] [Related]
19. Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications.
Gu Z; Wang J; Miao B; Zhao L; Liu X; Wu D; Li J
RSC Adv; 2019 May; 9(27):15341-15349. PubMed ID: 35514822
[TBL] [Abstract][Full Text] [Related]
20. The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor.
Zhang H; Yang S; Sheng K
Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32316694
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
